GaN FETs

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A5G26S008NT6
NXP Semiconductors
Quantity: 3952
Ship Date: 9-13 working days
22+
1+ $13.2714
25+ $12.723
50+ $12.1746
100+ $11.9552
300+ $11.8455
500+ $11.7359
1000+ $11.4068
5000+ $11.4068
- +
x $13.2714
Ext. Price: $132.71
MOQ: 10
Mult: 1
SPQ: 1
IGOT60R070D1AUMA3
Infineon Technologies
125W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel SO SMD mount
Quantity: 1600
Ship Date: 13-14 working days
800+ $7.1961
- +
x $7.1961
Ext. Price: $5756.88
MOQ: 800
Mult: 800
EPC2010C
Efficient Power Conversion
6V,4V 2.5V@3mA 5.3nC@ 5 V 200V 25mΩ@ 12A,5V 150μA 22A 540pF@100V 1individualNChannel SMD mount 3.55mm*1.63mm*690μm
Quantity: 1892
Ship Date: 7-12 working days
1+ $8.6076
10+ $5.6368
100+ $4.344
- +
x $8.6076
Ext. Price: $8.60
MOQ: 1
Mult: 1
SPQ: 1
STDRIVEG600W
STMicroelectronics
Driver 4-OUT High and Low Side Half Brdg Wafer
Quantity: 20000
Ship Date: 12-20 weeks
2000+ $1.0807
- +
x $1.0807
Ext. Price: $2161.40
MOQ: 2000
Mult: 2000
GAN041-650WSBQ
nexperia
Nexperia MOSTube, Vds=650 V, 47.2 A, TO-247encapsulation, Through hole mounting
Quantity: 3900
In Stock
24+
300+ $8.9068
- +
x $8.9068
Ext. Price: $2672.04
MOQ: 300
Mult: 300
SPQ: 300
EPC2221
Efficient Power Conversion
100V 2individualNChannel SMD mount
Quantity: 2153
Ship Date: 7-12 working days
1+ $3.834
10+ $2.4086
100+ $1.6807
500+ $1.4639
- +
x $3.834
Ext. Price: $3.83
MOQ: 1
Mult: 1
SPQ: 1
EPC8010
Efficient Power Conversion
6V,4V 2.5V@ 250µA 0.48nC@ 5 V 100V 160mΩ@ 500mA,5V 2.7A 55pF@50V 1individualNChannel SMD mount
Quantity: 393
Ship Date: 7-12 working days
1+ $3.3264
10+ $2.08
100+ $1.4399
500+ $1.2093
- +
x $3.3264
Ext. Price: $3.32
MOQ: 1
Mult: 1
SPQ: 1
EPC2206
Efficient Power Conversion
6V,4V 2.5V@13mA 19nC@ 5 V 80V 2.2mΩ@ 29A,5V 90A 1.94nF@40V 1individualNChannel SMD mount 6.05mm*2.3mm*690μm
Quantity: 417000
Ship Date: 7-12 working days
500+ $2.1809
1000+ $2.0621
- +
x $2.1809
Ext. Price: $1090.45
MOQ: 500
Mult: 500
SPQ: 1
EPC2022
Efficient Power Conversion
6V,4V 2.5V@12mA 100V 3.2mΩ@ 25A,5V 60A 1.5nF@50V 1individualNChannel SMD mount
Quantity: 16000
Ship Date: 7-12 working days
1000+ $4.849
- +
x $4.849
Ext. Price: $4849.00
MOQ: 1000
Mult: 1000
SPQ: 1
EPC2105
Efficient Power Conversion
2.5V@ 2.5mA,2.5V@ 10mA 2.5nC@ 5V,10nC@ 5V 80V 14.5mΩ@ 20A,5V,3.4mΩ@ 20A,5V 9.5A,38A 300pF@ 40V,1.1nF@ 40V 2individualNChannel SMD mount
Quantity: 1000
Ship Date: 7-12 working days
500+ $5.005
- +
x $5.005
Ext. Price: $2502.50
MOQ: 500
Mult: 500
SPQ: 1
EPC2016C
Efficient Power Conversion
1 6V,4V 2.5V@3mA 4.5nC@ 5 V 100V 16mΩ@ 11A,5V 150μA 18A 420pF@50V 100V 1individualNChannel SMD mount
Quantity: 45000
Ship Date: 7-12 working days
2500+ $1.131
- +
x $1.131
Ext. Price: $2827.50
MOQ: 2500
Mult: 2500
SPQ: 1
CDF56G6511N TR13 PBFREE
Central Semiconductor
1.1W(Ta),84W(Tc) 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel SMD mount
Quantity: 2297
Ship Date: 7-12 working days
1+ $5.3568
10+ $3.9676
100+ $2.85
500+ $2.7846
- +
x $5.3568
Ext. Price: $5.35
MOQ: 1
Mult: 1
SPQ: 1
IGT60R070D1ATMA4
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel HSOF-8-3 SMD mount
Quantity: 2000
Ship Date: 13-14 working days
2000+ $6.7147
- +
x $6.7147
Ext. Price: $13429.40
MOQ: 2000
Mult: 2000
TP65H035G4QS
transphorm
156W(Tc) 4.8V@1mA 22nC@ 10 V 650V 41mΩ@ 30A,10V 1.5nF@400V 1individualNChannel SMD mount
Quantity: 1634
Ship Date: 7-12 working days
1+ $19.4584
10+ $13.8809
100+ $13.207
- +
x $19.4584
Ext. Price: $19.45
MOQ: 1
Mult: 1
SPQ: 1
CLF1G0035-100PU
NXP Semiconductors
Quantity: 24
Ship Date: 9-13 working days
15+
1+ $268.9676
25+ $257.8532
50+ $246.7388
100+ $242.2931
300+ $240.0702
500+ $237.8473
1000+ $231.1787
5000+ $231.1787
- +
x $268.9676
Ext. Price: $268.96
MOQ: 1
Mult: 1
SPQ: 1
BTS247Z
Infineon Technologies
1 120W 20V 60nC@ 10V 55V 18mΩ@ 10V 44A Freestanding 1.38nF@ 25V 1individualNChannel TO-220 Through hole mounting 10mm*4.4mm*15.65mm
Quantity: 6046
Ship Date: 10-15 working days
1+ $4.0952
- +
x $4.0952
Ext. Price: $282.56
MOQ: 69
Mult: 1
EPC2218A
Efficient Power Conversion
6V 10.5nC@ 5V 80V 3.2mΩ@ 5V 1.189nF@ 50V
Quantity: 19000
Ship Date: 7-12 working days
1000+ $2.548
- +
x $2.548
Ext. Price: $2548.00
MOQ: 1000
Mult: 1000
SPQ: 1
EPC2100
Efficient Power Conversion
2.5V@ 4mA,2.5V@ 16mA 4.9nC@ 15V,19nC@ 15V 30V 8.2mΩ@ 25A,5V,2.1mΩ@ 25A,5V 10A,40A 475pF@ 15V,1.96nF@ 15V 2individualNChannel SMD mount
Quantity: 220
Ship Date: 7-12 working days
1+ $11.6208
10+ $7.7293
100+ $5.7773
- +
x $11.6208
Ext. Price: $11.62
MOQ: 1
Mult: 1
SPQ: 1
EPC2055
Efficient Power Conversion
2.5V@7mA 8.5nC@ 5 V 40V 3.6mΩ@ 15A,5V 29A 1.111nF@20V 40V 1individualNChannel SMD mount 2.5mm(length)*1.5mm(width)
Quantity: 10000
Ship Date: 7-12 working days
2500+ $1.066
- +
x $1.066
Ext. Price: $2665.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2110
Efficient Power Conversion
6V 2.5V@ 700µA 0.8nC@ 5V 120V 60mΩ@ 4A,5V 3.4A 80pF@60V 2individualNChannel
Quantity: 10000
Ship Date: 7-12 working days
2500+ $1.04
- +
x $1.04
Ext. Price: $2600.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2015C
Efficient Power Conversion
6V,4V 2.5V@9mA 8.7nC@ 5 V 40V 4mΩ@ 33A,5V 53A 1.18nF@20V 1individualNChannel SMD mount 4.11mm(length)*1.63mm(width)
Quantity: 10000
Ship Date: 7-12 working days
2500+ $2.379
- +
x $2.379
Ext. Price: $5947.50
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2001C
Efficient Power Conversion
1 6V,4V 2.5V@5mA 9nC@ 5 V 100V 7mΩ@ 25A,5V 250μA 36A 900pF@50V 100V 1individualNChannel SMD mount 4.11mm*1.63mm*690μm
Quantity: 32500
Ship Date: 7-12 working days
2500+ $2.418
- +
x $2.418
Ext. Price: $6045.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2034C
Efficient Power Conversion
1 6V 2.5V@7mA 11nC@ 5 V 200V 8mΩ@ 20A,5V Freestandingwithbuilt-indiode 1.14nF@100V 200V 1individualNChannel SMD mount 4.6mm(length)*2.6mm(width)
Quantity: 5500
Ship Date: 7-12 working days
500+ $5.005
- +
x $5.005
Ext. Price: $2502.50
MOQ: 500
Mult: 500
SPQ: 1
EPC2033
Efficient Power Conversion
6V 2.5V@9mA 10nC@ 5 V 150V 7mΩ@ 25A,5V 31A 1.14nF@75V 1individualNChannel SMD mount
Quantity: 2500
Ship Date: 7-12 working days
500+ $5.356
- +
x $5.356
Ext. Price: $2678.00
MOQ: 500
Mult: 500
SPQ: 1
TP70H300G4JSGB-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 8A, QFN;
Quantity: 4828
Ship Date: 3-12 working days
1+ $1.6112
10+ $1.3064
100+ $1.1975
500+ $1.1975
1000+ $1.1758
5000+ $1.1758
- +
x $1.6112
Ext. Price: $11.27
MOQ: 7
Mult: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.