GaN FETs

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CLF1G0035-50H
AMPLEON
Quantity: 632
Ship Date: 15-19 working days
24+
1+ $231.6195
25+ $222.204
50+ $212.7886
100+ $209.0224
300+ $207.1394
500+ $205.2563
1000+ $199.607
5000+ $199.607
- +
x $231.6195
Ext. Price: $231.61
MOQ: 1
Mult: 1
SPQ: 1
CLF1G0035-100PU
NXP Semiconductors
Quantity: 23
Ship Date: 15-19 working days
15+
1+ $273.4133
25+ $262.2989
50+ $251.1846
100+ $246.7388
300+ $244.516
500+ $242.2931
1000+ $235.6245
5000+ $235.6245
- +
x $273.4133
Ext. Price: $273.41
MOQ: 1
Mult: 1
SPQ: 1
IGC033S101XTMA1
Infineon Technologies
100V 76A 1individualPChannel SMD mount
Quantity: 1214
Ship Date: 3-12 working days
1+ $2.6983
10+ $2.3246
100+ $2.2831
500+ $2.2416
1000+ $2.2416
- +
x $2.6983
Ext. Price: $10.79
MOQ: 4
Mult: 1
GAN041-650WSBQ
nexperia
Nexperia MOSTube, Vds=650 V, 47.2 A, TO-247encapsulation, Through hole mounting
Quantity: 257
Ship Date: 14-19 working days
60+ $7.9758
100+ $7.875
300+ $7.7868
- +
x $7.9758
Ext. Price: $654.01
MOQ: 82
Mult: 1
SPQ: 1
EPC2034C
Efficient Power Conversion
1 6V 2.5V@7mA 11nC@ 5 V 200V 8mΩ@ 20A,5V Freestandingwithbuilt-indiode 1.14nF@100V 200V 1individualNChannel SMD mount 4.6mm(length)*2.6mm(width)
Quantity: 9000
Ship Date: 7-12 working days
500+ $5.0531
- +
x $5.0531
Ext. Price: $2526.55
MOQ: 500
Mult: 500
SPQ: 1
IGLT65R055D2ATMA1
Infineon Technologies
650V 31A 1individualNChannel SMD mount
Quantity: 950
Ship Date: 3-12 working days
1+ $4.361
10+ $3.9074
100+ $3.7679
500+ $3.7679
1000+ $3.7679
- +
x $4.361
Ext. Price: $13.08
MOQ: 3
Mult: 1
EPC2055
Efficient Power Conversion
2.5V@7mA 8.5nC@ 5 V 40V 3.6mΩ@ 15A,5V 29A 1.111nF@20V 40V 1individualNChannel SMD mount 2.5mm(length)*1.5mm(width)
Quantity: 30000
Ship Date: 7-12 working days
2500+ $1.0763
- +
x $1.0763
Ext. Price: $2690.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2015C
Efficient Power Conversion
6V,4V 2.5V@9mA 8.7nC@ 5 V 40V 4mΩ@ 33A,5V 53A 1.18nF@20V 1individualNChannel SMD mount 4.11mm*1.63mm*820μm
Quantity: 7500
Ship Date: 7-12 working days
2500+ $2.4019
- +
x $2.4019
Ext. Price: $6004.75
MOQ: 2500
Mult: 2500
SPQ: 1
BTS247Z
Infineon Technologies
1 120W 20V 60nC@ 10V 55V 18mΩ@ 10V 44A Freestanding 1.38nF@ 25V 1individualNChannel TO-220 Through hole mounting 10mm*4.4mm*15.65mm
Quantity: 6046
Ship Date: 10-15 working days
1+ $12.4116
- +
x $12.4116
Ext. Price: $285.46
MOQ: 23
Mult: 1
TP70H300G4JSGB-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 8A, QFN;
Quantity: 4828
Ship Date: 3-12 working days
1+ $1.7701
10+ $1.3395
100+ $1.3156
500+ $1.3156
1000+ $1.2917
5000+ $1.2917
- +
x $1.7701
Ext. Price: $10.62
MOQ: 6
Mult: 1
HCG65140DAA
HXY MOSFET
Quantity: 35
Ship Date: 2-5 working days
24+
1+ $1.5921
100+ $1.3733
1250+ $1.3059
2500+ $1.2611
- +
x $1.5921
Ext. Price: $15.92
MOQ: 10
Mult: 1
SPQ: 2500
EPC2110
Efficient Power Conversion
6V 2.5V@ 700µA 0.8nC@ 5V 120V 60mΩ@ 4A,5V 3.4A 80pF@60V 2individualNChannel
Quantity: 10000
Ship Date: 7-12 working days
2500+ $1.05
- +
x $1.05
Ext. Price: $2625.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2100
Efficient Power Conversion
2.5V@ 4mA,2.5V@ 16mA 4.9nC@ 15V,19nC@ 15V 30V 8.2mΩ@ 25A,5V,2.1mΩ@ 25A,5V 10A,40A 475pF@ 15V,1.96nF@ 15V 2individualNChannel SMD mount
Quantity: 220
Ship Date: 7-12 working days
1+ $11.6208
10+ $7.8036
100+ $5.8329
- +
x $11.6208
Ext. Price: $11.62
MOQ: 1
Mult: 1
SPQ: 1
EPC2001C
Efficient Power Conversion
1 6V,4V 2.5V@5mA 9nC@ 5 V 100V 7mΩ@ 25A,5V 250μA 36A 900pF@50V 100V 1individualNChannel SMD mount 4.11mm*1.63mm*690μm
Quantity: 52500
Ship Date: 7-12 working days
2500+ $2.4413
- +
x $2.4413
Ext. Price: $6103.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2033
Efficient Power Conversion
6V 2.5V@9mA 10nC@ 5 V 150V 7mΩ@ 25A,5V 31A 1.14nF@75V 1individualNChannel SMD mount
Quantity: 2180
Ship Date: 7-12 working days
500+ $5.4075
- +
x $5.4075
Ext. Price: $2703.75
MOQ: 500
Mult: 500
SPQ: 1
EPC2207
Efficient Power Conversion
1 6V 2.5V@2mA 5.9nC@ 5 V 200V 22mΩ@ 14A,5V 600pF@100V 200V 1individualNChannel SMD mount 2.9mm(length)*900μm(width)
Quantity: 22500
Ship Date: 7-12 working days
2500+ $1.0508
- +
x $1.0508
Ext. Price: $2627.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2218A
Efficient Power Conversion
6V 10.5nC@ 5V 80V 3.2mΩ@ 5V 1.189nF@ 50V
Quantity: 18000
Ship Date: 7-12 working days
1000+ $2.5725
- +
x $2.5725
Ext. Price: $2572.50
MOQ: 1000
Mult: 1000
SPQ: 1
EPC2108
Efficient Power Conversion
6V 2.5V@ 100µA,2.5V@ 20µA 0.22nC@ 5V,0.044nC@ 5V 60V,100V 190mΩ@ 2.5A,5V,3.3Ω @ 2.5A,5V 1.7A,500mA 22pF@ 30V,7pF@ 30V 3individualNChannel VFBGA-9 SMD mount
Quantity: 636
Ship Date: 7-12 working days
1+ $3.328
10+ $1.7325
100+ $1.1861
500+ $0.9525
- +
x $3.328
Ext. Price: $3.32
MOQ: 1
Mult: 1
SPQ: 1
SGT120R65AL
STMicroelectronics
STMicroelectronics MOSFETTube, Vds=750 V, 15 A, , surface mount,Through-hole, 4Pin
Quantity: 30000
Ship Date: 12-20 weeks
3000+ $2.2796
- +
x $2.2796
Ext. Price: $6838.80
MOQ: 3000
Mult: 3000
SPQ: 3000
EPC8002
Efficient Power Conversion
6V,4V 2.5V@ 250µA 65V 530mΩ@ 500mA,5V 2A 21pF@32.5V 1individualNChannel SMD mount
Quantity: 40000
Ship Date: 7-12 working days
2500+ $1.6144
- +
x $1.6144
Ext. Price: $4036.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC8009
Efficient Power Conversion
6V,4V 2.5V@ 250µA 0.45nC@ 5 V 65V 130mΩ@ 500mA,5V 2.7A 52pF@32.5V 1individualNChannel SMD mount
Quantity: 7500
Ship Date: 7-12 working days
2500+ $1.7194
- +
x $1.7194
Ext. Price: $4298.50
MOQ: 2500
Mult: 2500
SPQ: 1
HCG65200DBA
HXY MOSFET
ID:10A,VDSS:650V,RDON:160mR,VGS:-1.4~+7V,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
2500+ $1.7537
5000+ $1.7245
7500+ $1.6807
- +
x $1.7537
Ext. Price: $4384.25
MOQ: 2500
Mult: 2500
SPQ: 2500
EPC2065
Efficient Power Conversion
6V 9.4nC@ 5V 80V 3.6mΩ@ 5V 1.097nF@ 40V
Quantity: 1000
Ship Date: 22-24 weeks
1000+ $2.0571
- +
x $2.0571
Ext. Price: $2057.10
MOQ: 1000
Mult: 1000
SPQ: 1000
CLF1G0060-10
AMPLEON
Trans RF FET N-CH 150V GaN 3-Pin CDFM
Quantity: 305
Ship Date: 15-19 working days
25+
1+ $174.3198
25+ $167.2336
50+ $160.1474
100+ $157.313
300+ $155.8957
500+ $154.4785
1000+ $150.2268
5000+ $150.2268
- +
x $174.3198
Ext. Price: $174.31
MOQ: 1
Mult: 1
SPQ: 1
EPC2203
Efficient Power Conversion
5.75V,4V 2.5V@ 600µA 0.83nC@ 5 V 80V 80mΩ@ 1A,5V 1.7A 88pF@50V 1individualNChannel SMD mount
Quantity: 27500
Ship Date: 7-12 working days
2500+ $0.4142
5000+ $0.3839
7500+ $0.3685
12500+ $0.3609
- +
x $0.4142
Ext. Price: $1035.50
MOQ: 2500
Mult: 2500
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.