GaN FETs

Results:
GaN FETs Results:
Filter Results: -1/188
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
EPC2007
Efficient Power Conversion
6V 2.5V@1.2mA 2.8nC@ 5 V 100V 30mΩ@ 6A,5V 60μA 205pF@50V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
1000+ $0.8849
2000+ $0.858
- +
x $0.8849
Ext. Price: $884.90
MOQ: 1000
Mult: 1000
SPQ: 1
EPC2305ENGRT
Efficient Power Conversion
2.5V@11mA 21nC@ 5 V 150V 2.2mΩ@ 30A,5V 2.9nF@75V 1individualNChannel QFN SMD mount
Quantity: 0
Ship Date: 7-12 working days
3000+ $4.29
- +
x $4.29
Ext. Price: $12870.00
MOQ: 3000
Mult: 3000
SPQ: 1
EPC2018
Efficient Power Conversion
6V,5V 2.5V@3mA 7.5nC@ 5V 150V 25mΩ@ 6A,5V 12A 540pF@100V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2030ENGRT
Efficient Power Conversion
6V,4V 2.5V@16mA 18nC@ 5 V 40V 2.4mΩ@ 30A,5V 31A 1.9nF@20V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGOT60R070D1E8220AUMA1
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 380pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGO60R070D1E8220AUMA1
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 380pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
CLF1G0060-10U
AMPLEON
Freestanding 1individualNChannel CDFM-2 base mount,SMD mount
Quantity: 0
Ship Date: 7-12 working days
60+ $106.8536
- +
x $106.8536
Ext. Price: $6411.21
MOQ: 60
Mult: 60
SPQ: 1
EPC2100ENGRT
Efficient Power Conversion
2.5V@ 4mA,2.5V@ 16mA 4.9nC@ 15V,19nC@ 15V 30V 8.2mΩ@ 25A,5V,2.1mΩ@ 25A,5V 10A,40A 475pF@ 15V,1.96nF@ 15V 2individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
500+ $3.952
- +
x $3.952
Ext. Price: $1976.00
MOQ: 500
Mult: 500
SPQ: 1
GS66516T-MR
Infineon Technologies
Quantity: 0
Ship Date: 6-13 working days
1+ $44.154
10+ $37.6596
100+ $32.0355
250+ $32.0355
- +
x $44.154
Ext. Price: $44.15
MOQ: 1
Mult: 1
SPQ: 1
CLF1G0035-50H
AMPLEON
Quantity: 0
Ship Date: 9-13 working days
1+ $227.8533
25+ $218.4379
50+ $209.0224
100+ $205.2563
300+ $203.3732
500+ $201.4901
1000+ $195.8409
5000+ $195.8409
- +
x $227.8533
Ext. Price: $227.85
MOQ: 1
Mult: 1
SPQ: 1
A5G38H055NT4
NXP Semiconductors
RF MOSFET GAN 48V 6DFN
Quantity: 0
Ship Date: 7-12 working days
2500+ $21.272
- +
x $21.272
Ext. Price: $53180.00
MOQ: 2500
Mult: 2500
SPQ: 1
A5G35S004NT6
NXP Semiconductors
Air Fast RF Power GAN Transistor
Quantity: 0
Ship Date: 7-12 working days
5000+ $28.1695
- +
x $28.1695
Ext. Price: $140847.50
MOQ: 5000
Mult: 5000
SPQ: 1
CLF1G0060S-10U
AMPLEON
Trans RF FET N-CH 150V GaN 3-Pin CDFM Bulk
Quantity: 0
Ship Date: 7-12 working days
60+ $106.8536
- +
x $106.8536
Ext. Price: $6411.21
MOQ: 60
Mult: 60
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.