GaN FETs

Results:
GaN FETs Results:
Filter Results: -1/206
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
IGLD60R190D1SAUMA1
Infineon Technologies
62.5W(Tc) 1.6V@ 960µA 600V 10A 157pF@400V 1individualNChannel LSON-8 SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGT60R190D1SATMA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube CoolGaNseries, Vds=600 V, 12.5 A, HSOF-8encapsulation, surface mount, 8Pin
Quantity: 0
Ship Date: 7-13 working days
2000+ $15.3352
4000+ $14.8351
8000+ $14.3351
- +
x $15.3352
Ext. Price: $30670.40
MOQ: 2000
Mult: 2000
CLF1G0060S-30U
AMPLEON
Trans FET N-CH 150V GaN HEMT 3-Pin CDFM Bulk
Quantity: 0
Ship Date: 7-12 working days
60+ $150.5579
- +
x $150.5579
Ext. Price: $9033.47
MOQ: 60
Mult: 60
SPQ: 1
1214GN-50EQP-TS
Microchip Technology
RF MOSFET GAN 50V
Quantity: 0
Ship Date: 13-17 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGLR60R260D1E8238XUMA1
Infineon Technologies
52W(Tc) 1.6V@ 690µA 600V 110pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2034
Efficient Power Conversion
6V,4V 2.5V@7mA 8.8nC@ 5 V 200V 10mΩ@ 20A,5V 48A 950pF@100V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
500+ $4.2525
- +
x $4.2525
Ext. Price: $2126.25
MOQ: 500
Mult: 500
SPQ: 1
GS66516T-TR
Infineon Technologies
Quantity: 0
Ship Date: 6-13 working days
1+ $44.154
10+ $37.6596
100+ $34.272
500+ $34.2615
3000+ $30.1245
- +
x $44.154
Ext. Price: $44.15
MOQ: 1
Mult: 1
SPQ: 1
EPC2001
Efficient Power Conversion
6V,5V 2.5V@5mA 10nC@ 5 V 100V 7mΩ@ 25A,5V 25A 950pF@50V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2014
Efficient Power Conversion
6V,5V 2.5V@2mA 2.8nC@ 5 V 40V 16mΩ@ 5A,5V 10A 325pF@20V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2031ENGRT
Efficient Power Conversion
6V,4V 2.5V@15mA 17nC@ 5 V 60V 2.6mΩ@ 30A,5V 31A 1.8nF@300V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGOT60R042D1AUMA2
Infineon Technologies
600V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2018
Efficient Power Conversion
6V,5V 2.5V@3mA 7.5nC@ 5V 150V 25mΩ@ 6A,5V 12A 540pF@100V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2305ENGRT
Efficient Power Conversion
2.5V@11mA 21nC@ 5 V 150V 2.2mΩ@ 30A,5V 2.9nF@75V 1individualNChannel QFN SMD mount
Quantity: 0
Ship Date: 7-12 working days
3000+ $4.3313
- +
x $4.3313
Ext. Price: $12993.90
MOQ: 3000
Mult: 3000
SPQ: 1
EPC2030ENGRT
Efficient Power Conversion
6V,4V 2.5V@16mA 18nC@ 5 V 40V 2.4mΩ@ 30A,5V 31A 1.9nF@20V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2007
Efficient Power Conversion
6V 2.5V@1.2mA 2.8nC@ 5 V 100V 30mΩ@ 6A,5V 60μA 205pF@50V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
1000+ $0.8934
2000+ $0.8663
- +
x $0.8934
Ext. Price: $893.40
MOQ: 1000
Mult: 1000
SPQ: 1
IGOT60R070D1E8220AUMA1
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 380pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
TP65H050G4YS
transphorm
132W(Tc) 4.8V@ 700µA 24nC@ 10 V 650V 60mΩ@ 22A,10V 1nF@400V 1individualNChannel TO-247-4L Through hole mounting
Quantity: 0
Ship Date: 9-14 working days
1+ $5.95
- +
x $5.95
Ext. Price: $345.10
MOQ: 58
Mult: 1
SPQ: 2
IGO60R070D1E8220AUMA1
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 380pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
GS66516T-MR
Infineon Technologies
Quantity: 0
Ship Date: 6-13 working days
1+ $44.154
10+ $37.6596
100+ $32.0355
- +
x $44.154
Ext. Price: $44.15
MOQ: 1
Mult: 1
SPQ: 1
EPC2100ENGRT
Efficient Power Conversion
2.5V@ 4mA,2.5V@ 16mA 4.9nC@ 15V,19nC@ 15V 30V 8.2mΩ@ 25A,5V,2.1mΩ@ 25A,5V 10A,40A 475pF@ 15V,1.96nF@ 15V 2individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
500+ $3.99
- +
x $3.99
Ext. Price: $1995.00
MOQ: 500
Mult: 500
SPQ: 1
CLF1G0060-10U
AMPLEON
Freestanding 1individualNChannel CDFM-2 base mount,SMD mount 3.68mm(height)
Quantity: 0
Ship Date: 7-12 working days
60+ $107.881
- +
x $107.881
Ext. Price: $6472.86
MOQ: 60
Mult: 60
SPQ: 1
EPC2152ENGRT
Efficient Power Conversion
8.5mOhm LS,8.5mOhm HS WFLGA-12 SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
IGOT60R070D1E8237AUMA1
Infineon Technologies
125W(Tc) 1.6V@2.6mA 600V 380pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2106ENGRT
Efficient Power Conversion
2.5V@ 600µA 0.73nC@ 5V 100V 70mΩ@ 2A,5V 1.7A 75pF@50V 2individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
A5G35S004NT6
NXP Semiconductors
Air Fast RF Power GAN Transistor
Quantity: 0
Ship Date: 7-12 working days
5000+ $15.4519
- +
x $15.4519
Ext. Price: $77259.50
MOQ: 5000
Mult: 5000
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.