GaN FETs

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IGC037S12S1XTMA1
Infineon Technologies
GAN TRANSISTOR, 120V, 71A, TSON;
Quantity: 3385
Ship Date: 3-12 working days
1+ $2.668
10+ $2.2986
100+ $2.2575
500+ $2.2165
1000+ $2.2165
- +
x $2.668
Ext. Price: $10.67
MOQ: 4
Mult: 1
GS66502B-MR
GaN Systems
7V 1.5nC@ 6V 650V 260mΩ@ 6V 65pF@ 400V
Quantity: 250
Ship Date: 10-15 working days
250+ $4.2768
500+ $4.1184
- +
x $4.2768
Ext. Price: $1069.20
MOQ: 250
Mult: 250
SPQ: 250
GAN063-650WSAQ
nexperia
143W(Ta) 20V 4.5V@1mA 15nC@ 10 V 650V 60mΩ@ 25A,10V 34.5A 1nF@400V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 309
Ship Date: 15-19 working days
22+
1+ $25.2
25+ $24.2
50+ $23.2
100+ $23
300+ $22.8
500+ $22.6
1000+ $22.4
5000+ $22.2
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x $25.2
Ext. Price: $126.00
MOQ: 5
Mult: 1
SPQ: 1
EPC2016
Efficient Power Conversion
6V,5V 2.5V@3mA 5.2nC@ 5V 100V 16mΩ@ 11A,5V 11A 520pF@50V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
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x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2110ENGRT
Efficient Power Conversion
2.5V@ 700µA 0.8nC@ 5V 120V 60mΩ@ 4A,5V 3.4A 80pF@60V 2individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
2500+ $0.9581
- +
x $0.9581
Ext. Price: $2395.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2101ENGRT
Efficient Power Conversion
2.5V@2mA 2.7nC@ 5V 60V 11.5mΩ@ 20A,5V 9.5A,38A 300pF@30V 2individualNChannel HALF SMD mount
Quantity: 0
Ship Date: 7-12 working days
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x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
CLF1G0060-30
AMPLEON
Trans FET N-CH 150V GaN HEMT 3-Pin CDFM
Quantity: 0
Ship Date: 15-19 working days
1+ $152.1274
25+ $145.9434
50+ $139.7594
100+ $137.2857
300+ $136.0489
500+ $134.8121
1000+ $131.1017
5000+ $131.1017
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x $152.1274
Ext. Price: $152.12
MOQ: 1
Mult: 1
SPQ: 1
CLF3H0060S-10U
AMPLEON
RF MOSFET GAN HEMT 50V SOT1227B
Quantity: 0
Ship Date: 7-12 working days
60+ $118.6682
- +
x $118.6682
Ext. Price: $7120.09
MOQ: 60
Mult: 60
SPQ: 1
EPC2105ENGRT
Efficient Power Conversion
2.5V@2.5mA 2.5nC@ 5V 80V 14.5mΩ@ 20A,5V 9.5A 300pF@40V 2individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
IGLR60R190D1E8238XUMA1
Infineon Technologies
55.5W(Tc) 1.6V@ 960µA 600V 157pF@400V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2049ENGRT
Efficient Power Conversion
6V,4V 2.5V@6mA 7.6nC@ 5V 40V 5mΩ@ 15A,5V 16A 805pF@20V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
2500+ $2.3756
- +
x $2.3756
Ext. Price: $5939.00
MOQ: 2500
Mult: 2500
SPQ: 1
NTP8G202NG
ON Semiconductor
65W(Tc) 18V 2.6V@ 500µA 9.3nC@ 4.5 V 600V 350mΩ@ 5.5A,8V 60μA 9A 760pF@400V 1individualNChannel TO-220 Through hole mounting 9.28mm(height)
Quantity: 0
Ship Date: 15-19 working days
1+ $14.9432
25+ $14.3357
50+ $13.7283
100+ $13.4853
300+ $13.3638
500+ $13.2423
1000+ $12.8779
5000+ $12.8779
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x $14.9432
Ext. Price: $134.48
MOQ: 9
Mult: 1
SPQ: 1
GS-065-011-1-L-MR
GaN Systems
7V 2.2nC@ 6V 650V 190mΩ@ 6V 70pF@ 400V
Quantity: 0
Ship Date: 10-15 working days
250+ $3.2976
500+ $3.1104
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x $3.2976
Ext. Price: $824.40
MOQ: 250
Mult: 250
SPQ: 250
SSM5H12TU(TE85L,F)
TOSHIBA
1 500mW 30V 133mΩ 1.9A Freestanding 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
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x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2025
Efficient Power Conversion
2.5V@1mA 300V 150mΩ@ 3A,5V 194pF@240V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
3000+ $2.4806
- +
x $2.4806
Ext. Price: $7441.80
MOQ: 3000
Mult: 3000
SPQ: 1
EPC2015
Efficient Power Conversion
6V,5V 2.5V@9mA 11.6nC@ 5 V 40V 4mΩ@ 33A,5V 33A 1.2nF@20V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2010
Efficient Power Conversion
6V,4V 2.5V@3mA 7.5nC@ 5 V 200V 25mΩ@ 6A,5V 12A 540pF@100V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
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x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
EPC2619ENGRT
Efficient Power Conversion
2.5V@5.5mA 8.3nC@ 5 V 80V 3.3mΩ@ 16A,5V 1.18nF@50V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
10000+ $1.7063
- +
x $1.7063
Ext. Price: $17063.00
MOQ: 10000
Mult: 10000
SPQ: 1
IGO60R042D1AUMA2
Infineon Technologies
600V SMD mount
Quantity: 0
Ship Date: 7-12 working days
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x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
WI62195
1.75V@10mA 1.9nC@ 6V 750V 250mΩ@ 2A,6V 53.5pF@400V SMD mount
Quantity: 0
Ship Date: 7-12 working days
1500+ $3.15
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x $3.15
Ext. Price: $4725.00
MOQ: 1500
Mult: 1500
SPQ: 1
MRF24G300HS-2STG
NXP Semiconductors
Quantity: 0
Ship Date: 12-17 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1
XLMG2100R026VBNR
Texas Instruments
Quantity: 0
Ship Date: 3-4 weeks
1000+ $6.7147
2000+ $6.6028
3000+ $6.4909
- +
x $6.7147
Ext. Price: $6714.70
MOQ: 1000
Mult: 1000
GS-065-030-2-L-MR
GaN Systems
7V 7.7nC@ 6V 850V 50mΩ(Typ) @ 6V 201pF@ 400V
Quantity: 0
Ship Date: 10-15 working days
250+ $8.1072
- +
x $8.1072
Ext. Price: $2026.80
MOQ: 250
Mult: 250
SPQ: 250
WI62120
2.2V@10mA 2.75nC@ 6V 650V 92.7pF@400V SMD mount
Quantity: 0
Ship Date: 7-12 working days
300+ $3.9049
- +
x $3.9049
Ext. Price: $1171.47
MOQ: 300
Mult: 300
SPQ: 1
EPC2012
Efficient Power Conversion
6V,5V 2.5V@1mA 1.8nC@ 5 V 200V 100mΩ@ 3A,5V 3A 145pF@100V 1individualNChannel SMD mount
Quantity: 0
Ship Date: 7-12 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.