GaN FETs

Results:
GaN FETs Results:
Filter Results: -1/203
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
GPI65010DF56
GaNPower
1.4V@3.5mA 2.6nC@ 6 V 650V 90pF@400V 1individualNChannel DFN-5 SMD mount
Quantity: 88812
Ship Date: 3-7 working days
2500+ $0.299
7500+ $0.2941
12500+ $0.2865
- +
x $0.299
Ext. Price: $747.50
MOQ: 2500
Mult: 2500
SPQ: 2500
EPC2070
Efficient Power Conversion
6V 1.9nC@ 5V 100V 23mΩ@ 5V 257pF@ 50V
Quantity: 12500
Ship Date: 7-12 working days
2500+ $0.5034
5000+ $0.4683
7500+ $0.455
- +
x $0.5034
Ext. Price: $1258.50
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2308ENGRT
Efficient Power Conversion
2.5V@5mA 13.8nC@ 5 V 150V 6mΩ@ 15A,5V 2.103nF@75V 1individualNChannel SMD mount
Quantity: 39000
Ship Date: 7-12 working days
3000+ $2.73
- +
x $2.73
Ext. Price: $8190.00
MOQ: 3000
Mult: 3000
SPQ: 1
EPC2023
Efficient Power Conversion
6V 2.5V@20mA 30V 1.3mΩ@ 40A,5V 60A 2.3nF@15V 1individualNChannel SMD mount
Quantity: 1500
Ship Date: 7-12 working days
500+ $4.498
- +
x $4.498
Ext. Price: $2249.00
MOQ: 500
Mult: 500
SPQ: 1
BSF083N03LQ G
Infineon Technologies
1 2.2W 20V 8.5nC@ 4.5V,18nC@ 10V 30V 8.3mΩ@ 10V 13A Freestanding 1.35nF@ 15V 1individualNChannel SON SMD mount,glue mount 6.35mm*5.05mm*700μm
Quantity: 5746
Ship Date: 9-13 working days
08+
300+ $0.3499
500+ $0.3466
1000+ $0.3369
5000+ $0.3369
- +
x $0.3499
Ext. Price: $118.26
MOQ: 338
Mult: 1
SPQ: 1
A2G22S251-01SR3
NXP Semiconductors
125V NI-400S-2S SMD mount 4.14mm(height)
Quantity: 5059
Ship Date: 9-13 working days
22+
1+ $77.5945
25+ $74.3881
50+ $71.1817
100+ $69.8991
300+ $69.2579
500+ $68.6166
1000+ $66.6928
5000+ $66.6928
- +
x $77.5945
Ext. Price: $155.18
MOQ: 2
Mult: 1
SPQ: 1
EPC2302
Efficient Power Conversion
1 6V 23nC@ 5V 100V 1.8mΩ@ 5V 3.2nF@ 50V SMD mount
Quantity: 85000
Ship Date: 7-12 working days
3000+ $3.8168
- +
x $3.8168
Ext. Price: $11450.40
MOQ: 3000
Mult: 3000
SPQ: 1
A3G26D055NT4
NXP Semiconductors
0V 125V
Quantity: 2003
Ship Date: 8-13 working days
1+ $57.2768
10+ $47.1072
100+ $41.5968
- +
x $57.2768
Ext. Price: $57.27
MOQ: 1
Mult: 1
SPQ: 1
EPC2037
Efficient Power Conversion
1 6V,4V 2.5V@ 80µA 0.12nC@ 5 V 100V 550mΩ@ 100mA,5V 1.7A 14pF@50V 100V 1individualNChannel SMD mount 900μm(length)*900μm(width)
Quantity: 1315000
Ship Date: 7-12 working days
2500+ $0.5763
5000+ $0.5373
7500+ $0.533
- +
x $0.5763
Ext. Price: $1440.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2057
Efficient Power Conversion
TRANS GAN 50V .0085OHM 4LGA
Quantity: 7500
Ship Date: 7-12 working days
2500+ $0.6835
5000+ $0.65
- +
x $0.6835
Ext. Price: $1708.75
MOQ: 2500
Mult: 2500
SPQ: 1
CLF3H0060S-10U
AMPLEON
RF MOSFET GAN HEMT 50V SOT1227B
Quantity: 51
Ship Date: 7-12 working days
1+ $128.2736
20+ $104.6609
40+ $104.598
- +
x $128.2736
Ext. Price: $128.27
MOQ: 1
Mult: 1
SPQ: 1
EPC2032
Efficient Power Conversion
6V,4V 2.5V@11mA 15nC@ 5V 100V 4mΩ@ 30A,5V 48A 1.53nF@50V 1individualNChannel SMD mount
Quantity: 4000
Ship Date: 7-12 working days
500+ $3.913
- +
x $3.913
Ext. Price: $1956.50
MOQ: 500
Mult: 500
SPQ: 1
MX1025D
maxinmicro
Gate driveIC
Quantity: 1965
In Stock
23+
1+ $0.2388
10+ $0.1964
30+ $0.1631
100+ $0.135
300+ $0.1319
3000+ $0.1257
- +
x $0.2388
Ext. Price: $0.23
MOQ: 1
Mult: 1
SPQ: 3000
EPC2619
Efficient Power Conversion
2.5V@5.5mA 8.3nC@ 5 V 80V 3.3mΩ@ 16A,5V 1.18nF@50V 1individualNChannel SMD mount
Quantity: 5000
Ship Date: 8-18 working days
1+ $2.2286
- +
x $2.2286
Ext. Price: $5571.50
MOQ: 2500
Mult: 2500
SPQ: 2500
IGLR65R140D2XUMA1
Infineon Technologies
650V 13A 1individualNChannel SMD mount
Quantity: 4895
Ship Date: 3-12 working days
1+ $2.1286
10+ $1.8339
100+ $1.8012
500+ $1.7684
1000+ $1.7684
- +
x $2.1286
Ext. Price: $10.64
MOQ: 5
Mult: 1
EPC2045
Efficient Power Conversion
6V 2.5V@5mA 6.5nC@ 5 V 100V 7mΩ@ 16A,5V Freestandingwithbuilt-indiode 685pF@50V 1individualNChannel SMD mount
Quantity: 22500
Ship Date: 7-12 working days
2500+ $1.82
- +
x $1.82
Ext. Price: $4550.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2216
Efficient Power Conversion
6V 2.5V@1mA 1.1nC@ 5 V 15V 26mΩ@ 1.5A,5V 118pF@7.5V 1individualNChannel SMD mount
Quantity: 30000
Ship Date: 7-12 working days
2500+ $0.546
- +
x $0.546
Ext. Price: $1365.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2106
Efficient Power Conversion
6V 2.5V@ 600µA 0.73nC@ 5V 100V 70mΩ@ 2A,5V 250μA 1.7A 75pF@50V 2individualNChannel SMD mount
Quantity: 7000
Ship Date: 7-12 working days
2500+ $0.8233
5000+ $0.806
- +
x $0.8233
Ext. Price: $2058.25
MOQ: 2500
Mult: 2500
SPQ: 1
HCG65140DBA
HXY MOSFET
ID:17A,VDSS:650V,RDON:100mR,VGS:-1.4~+7V,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
2500+ $1.3756
5000+ $1.3527
7500+ $1.3182
10000+ $1.2036
- +
x $1.3756
Ext. Price: $3439.00
MOQ: 2500
Mult: 2500
SPQ: 2500
IGC033S10S1XTMA1
Infineon Technologies
100V 76A 1individualPChannel SMD mount
Quantity: 334
Ship Date: 3-12 working days
1+ $2.7887
10+ $2.4026
100+ $2.3597
500+ $2.3168
1000+ $2.3168
- +
x $2.7887
Ext. Price: $11.15
MOQ: 4
Mult: 1
IGLD65R080D2AUMA1
Infineon Technologies
GAN TRANSISTOR, 650V, 18A, LSON;
Quantity: 2361
Ship Date: 3-12 working days
1+ $3.9894
10+ $3.5745
100+ $3.4468
500+ $3.4468
1000+ $3.4468
- +
x $3.9894
Ext. Price: $11.96
MOQ: 3
Mult: 1
TP65H030G4PWS
Renesas Electronics
GAN TRANSISTOR, 650V, 55.7A, TO-247;
Quantity: 874
Ship Date: 6-12 working days
1+ $13.0417
5+ $12.3385
10+ $11.1438
50+ $10.976
100+ $10.6131
250+ $10.4483
- +
x $13.0417
Ext. Price: $26.08
MOQ: 2
Mult: 1
STP80N600K6
STMicroelectronics
86W 30V 10.7nC@ 10V 800V 600mΩ@ 10V 7A 540pF@ 400V 1individualNChannel TO-220 Through hole mounting
Quantity: 39
Ship Date: 6-12 working days
10+ $1.4079
100+ $1.3735
500+ $1.3506
1000+ $1.3163
- +
x $1.4079
Ext. Price: $47.86
MOQ: 34
Mult: 1
EPC2007C
Efficient Power Conversion
6V,4V 2.5V@1.2mA 2.2nC@ 5 V 100V 30mΩ@ 6A,5V 6A 220pF@50V 100V 1individualNChannel SMD mount
Quantity: 7500
Ship Date: 7-12 working days
2500+ $0.988
- +
x $0.988
Ext. Price: $2470.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2040
Efficient Power Conversion
6V 2.5V@1mA 0.93nC@ 5 V 15V 30mΩ@ 1.5A,5V 250μA 3.4A 105pF@6V 1individualNChannel SMD mount
Quantity: 22500
Ship Date: 7-12 working days
2500+ $0.5034
5000+ $0.4683
7500+ $0.455
- +
x $0.5034
Ext. Price: $1258.50
MOQ: 2500
Mult: 2500
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.