GaN FETs

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GAN190-650EBEZ
nexperia
125W(Ta) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-8080-8 SMD mount
Quantity: 1993
Ship Date: 3-12 working days
1+ $4.8018
10+ $4.2683
100+ $4.1972
500+ $4.1972
1000+ $4.1972
- +
x $4.8018
Ext. Price: $9.60
MOQ: 2
Mult: 1
BSF083N03LQ G
Infineon Technologies
1 2.2W 20V 8.5nC@ 4.5V,18nC@ 10V 30V 8.3mΩ@ 10V 13A Freestanding 1.35nF@ 15V 1individualNChannel SON SMD mount,glue mount 6.35mm*5.05mm*700μm
Quantity: 5622
Ship Date: 15-19 working days
08+
300+ $0.3563
500+ $0.3531
1000+ $0.3434
5000+ $0.3434
- +
x $0.3563
Ext. Price: $120.07
MOQ: 337
Mult: 1
SPQ: 1
EPC2070
Efficient Power Conversion
6V 1.9nC@ 5V 100V 23mΩ@ 5V 257pF@ 50V
Quantity: 7500
Ship Date: 7-12 working days
2500+ $0.5083
5000+ $0.4728
7500+ $0.4594
- +
x $0.5083
Ext. Price: $1270.75
MOQ: 2500
Mult: 2500
SPQ: 1
A2G22S251-01SR3
NXP Semiconductors
125V NI-400S-2S SMD mount 4.14mm(height)
Quantity: 4951
Ship Date: 15-19 working days
22+
1+ $78.877
25+ $75.6706
50+ $72.4643
100+ $71.1817
300+ $70.5404
500+ $69.8991
1000+ $67.9753
5000+ $67.9753
- +
x $78.877
Ext. Price: $157.75
MOQ: 2
Mult: 1
SPQ: 1
EPC2302
Efficient Power Conversion
1 6V 23nC@ 5V 100V 1.8mΩ@ 5V 3.2nF@ 50V SMD mount
Quantity: 129000
Ship Date: 7-12 working days
3000+ $3.8535
- +
x $3.8535
Ext. Price: $11560.50
MOQ: 3000
Mult: 3000
SPQ: 1
A3G26D055NT4
NXP Semiconductors
0V 125V
Quantity: 1989
Ship Date: 12-17 working days
1+ $63.725
10+ $47.52
100+ $43.884
500+ $43.872
2500+ $39.168
- +
x $63.725
Ext. Price: $127.45
MOQ: 2
Mult: 1
SPQ: 1
EPC2308ENGRT
Efficient Power Conversion
2.5V@5mA 13.8nC@ 5 V 150V 6mΩ@ 15A,5V 2.103nF@75V 1individualNChannel SMD mount
Quantity: 39000
Ship Date: 7-12 working days
3000+ $2.7563
- +
x $2.7563
Ext. Price: $8268.90
MOQ: 3000
Mult: 3000
SPQ: 1
GPI65010DF56
GaNPower
1.4V@3.5mA 2.6nC@ 6 V 650V 90pF@400V 1individualNChannel DFN-5 SMD mount
Quantity: 88812
Ship Date: 3-7 working days
2500+ $0.3006
7500+ $0.2956
12500+ $0.2881
- +
x $0.3006
Ext. Price: $751.50
MOQ: 2500
Mult: 2500
SPQ: 2500
IGLR65R140D2XUMA1
Infineon Technologies
650V 13A 1individualNChannel SMD mount
Quantity: 4895
Ship Date: 3-12 working days
1+ $2.1396
10+ $1.8434
100+ $1.8105
500+ $1.7776
1000+ $1.7776
- +
x $2.1396
Ext. Price: $10.69
MOQ: 5
Mult: 1
EPC2619
Efficient Power Conversion
2.5V@5.5mA 8.3nC@ 5 V 80V 3.3mΩ@ 16A,5V 1.18nF@50V 1individualNChannel SMD mount
Quantity: 5000
Ship Date: 8-18 working days
1+ $2.2286
- +
x $2.2286
Ext. Price: $5571.50
MOQ: 2500
Mult: 2500
SPQ: 2500
IGLD60R070D1AUMA3
Infineon Technologies
114W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel SON SMD mount
Quantity: 3603
Ship Date: 15-19 working days
1+ $17.1968
100+ $14.657
500+ $11.9816
- +
x $17.1968
Ext. Price: $17.19
MOQ: 1
Mult: 1
EPC2032
Efficient Power Conversion
6V,4V 2.5V@11mA 15nC@ 5V 100V 4mΩ@ 30A,5V 48A 1.53nF@50V 1individualNChannel SMD mount
Quantity: 3300
Ship Date: 7-12 working days
500+ $3.9506
- +
x $3.9506
Ext. Price: $1975.30
MOQ: 500
Mult: 500
SPQ: 1
MX1025D
maxinmicro
Gate driveIC
Quantity: 1935
In Stock
23+
1+ $0.26
10+ $0.2139
30+ $0.1776
100+ $0.1471
300+ $0.1436
3000+ $0.1368
- +
x $0.26
Ext. Price: $0.26
MOQ: 1
Mult: 1
SPQ: 3000
IGO60R070D1AUMA2
Infineon Technologies
125W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel DSO SMD mount
Quantity: 40
Ship Date: 10-15 working days
1+ $15.3238
25+ $13.9177
50+ $13.6334
100+ $12.765
250+ $12.51
- +
x $15.3238
Ext. Price: $76.61
MOQ: 5
Mult: 1
EPC2037
Efficient Power Conversion
1 6V,4V 2.5V@ 80µA 0.12nC@ 5 V 100V 550mΩ@ 100mA,5V 1.7A 14pF@50V 100V 1individualNChannel SMD mount 900μm(length)*900μm(width)
Quantity: 1312500
Ship Date: 7-12 working days
2500+ $0.5819
5000+ $0.5424
7500+ $0.5381
- +
x $0.5819
Ext. Price: $1454.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2045
Efficient Power Conversion
6V 2.5V@5mA 6.5nC@ 5 V 100V 7mΩ@ 16A,5V Freestandingwithbuilt-indiode 685pF@50V 1individualNChannel SMD mount
Quantity: 35000
Ship Date: 7-12 working days
2500+ $1.8375
- +
x $1.8375
Ext. Price: $4593.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2057
Efficient Power Conversion
TRANS GAN 50V .0085OHM 4LGA
Quantity: 5000
Ship Date: 7-12 working days
2500+ $0.6901
5000+ $0.6563
- +
x $0.6901
Ext. Price: $1725.25
MOQ: 2500
Mult: 2500
SPQ: 1
STP80N600K6
STMicroelectronics
86W 30V 10.7nC@ 10V 800V 600mΩ@ 10V 7A 540pF@ 400V 1individualNChannel TO-220 Through hole mounting
Quantity: 39
Ship Date: 6-12 working days
10+ $1.4079
100+ $1.3735
500+ $1.3506
1000+ $1.3163
- +
x $1.4079
Ext. Price: $50.68
MOQ: 36
Mult: 1
GAN080-650EBEZ
nexperia
240W 7V 6.2nC@ 6V 650V 80mΩ@ 6V 225pF@ 400V
Quantity: 3712
Ship Date: 3-12 working days
1+ $9.985
10+ $9.2169
100+ $9.0633
500+ $9.0633
1000+ $9.0633
- +
x $9.985
Ext. Price: $9.98
MOQ: 1
Mult: 1
EPC2216
Efficient Power Conversion
6V 2.5V@1mA 1.1nC@ 5 V 15V 26mΩ@ 1.5A,5V 118pF@7.5V 1individualNChannel SMD mount
Quantity: 30000
Ship Date: 7-12 working days
2500+ $0.5513
- +
x $0.5513
Ext. Price: $1378.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2106
Efficient Power Conversion
6V 2.5V@ 600µA 0.73nC@ 5V 100V 70mΩ@ 2A,5V 250μA 1.7A 75pF@50V 2individualNChannel SMD mount
Quantity: 12500
Ship Date: 7-12 working days
2500+ $0.8312
5000+ $0.8138
- +
x $0.8312
Ext. Price: $2078.00
MOQ: 2500
Mult: 2500
SPQ: 1
IGLD65R080D2AUMA1
Infineon Technologies
GAN TRANSISTOR, 650V, 18A, LSON;
Quantity: 2308
Ship Date: 3-12 working days
1+ $3.6804
10+ $3.2976
100+ $3.1798
500+ $3.1798
1000+ $3.1798
- +
x $3.6804
Ext. Price: $11.04
MOQ: 3
Mult: 1
HCG65140DBA
HXY MOSFET
ID:17A,VDSS:650V,RDON:100mR,VGS:-1.4~+7V,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
2500+ $1.4549
5000+ $1.4306
7500+ $1.3942
- +
x $1.4549
Ext. Price: $3637.25
MOQ: 2500
Mult: 2500
SPQ: 2500
IGC033S10S1XTMA1
Infineon Technologies
100V 76A 1individualPChannel SMD mount
Quantity: 309
Ship Date: 3-12 working days
1+ $2.8031
10+ $2.415
100+ $2.3719
500+ $2.3287
1000+ $2.3287
- +
x $2.8031
Ext. Price: $11.21
MOQ: 4
Mult: 1
TP65H030G4PWS
Renesas Electronics
GAN TRANSISTOR, 650V, 55.7A, TO-247;
Quantity: 840
Ship Date: 6-12 working days
1+ $12.391
5+ $11.8138
10+ $10.7546
50+ $10.6799
100+ $10.4123
250+ $10.3389
- +
x $12.391
Ext. Price: $24.78
MOQ: 2
Mult: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.