GaN FETs

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GS-065-011-1-L-TR
Infineon Technologies
Quantity: 2253
Ship Date: 6-13 working days
1+ $5.796
10+ $4.444
100+ $3.5316
500+ $3.045
1000+ $2.6145
3000+ $2.352
- +
x $5.796
Ext. Price: $5.79
MOQ: 1
Mult: 1
SPQ: 1
EPC8010
Efficient Power Conversion
6V,4V 2.5V@ 250µA 0.48nC@ 5 V 100V 160mΩ@ 500mA,5V 2.7A 55pF@50V 1individualNChannel SMD mount
Quantity: 7500
Ship Date: 7-12 working days
2500+ $0.9975
- +
x $0.9975
Ext. Price: $2493.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2024
Efficient Power Conversion
6V,4V 2.5V@19mA 40V 1.5mΩ@ 37A,5V 60A 2.1nF@20V 1individualNChannel SMD mount
Quantity: 3500
Ship Date: 7-12 working days
500+ $4.4494
- +
x $4.4494
Ext. Price: $2224.69
MOQ: 500
Mult: 500
SPQ: 1
EPC2214
Efficient Power Conversion
2.5V@2mA 2.2nC@ 5 V 80V 20mΩ@ 6A,5V 238pF@40V 1individualNChannel SMD mount
Quantity: 2500
Ship Date: 22-24 weeks
2500+ $0.9771
- +
x $0.9771
Ext. Price: $2442.75
MOQ: 2500
Mult: 2500
SPQ: 2500
EPC2212
Efficient Power Conversion
6V 2.5V@3mA 4nC@ 5 V 100V 13.5mΩ@ 11A,5V 407pF@50V 100V 1individualNChannel SMD mount 2.1mm(length)*1.6mm(width)
Quantity: 92500
Ship Date: 7-12 working days
2500+ $1.3913
- +
x $1.3913
Ext. Price: $3478.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2031
Efficient Power Conversion
2.5V@15mA 17nC@ 5 V 60V 2.6mΩ@ 30A,5V 31A 1.8nF@300V 1individualNChannel SMD mount
Quantity: 13500
Ship Date: 7-12 working days
500+ $3.8325
- +
x $3.8325
Ext. Price: $1916.25
MOQ: 500
Mult: 500
SPQ: 1
EPC2306ENGRT
Efficient Power Conversion
2.5V@7mA 16.3nC@ 5 V 100V 3.8mΩ@ 25A,5V 2.366nF@50V 1individualNChannel QFN-7 SMD mount
Quantity: 2050
Ship Date: 7-12 working days
1+ $6.8148
10+ $4.4489
100+ $3.2156
500+ $3.213
- +
x $6.8148
Ext. Price: $6.81
MOQ: 1
Mult: 1
SPQ: 1
HCG65200DAA
HXY MOSFET
ID:10A,VDSS:650V,RDON:160mR,VGS:-1.4~+7V,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
2500+ $1.396
5000+ $1.3727
7500+ $1.3378
- +
x $1.396
Ext. Price: $3490.00
MOQ: 2500
Mult: 2500
SPQ: 2500
GAN140-650FBEZ
nexperia
113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V
Quantity: 284
Ship Date: 3-12 working days
1+ $8.6492
10+ $7.6881
100+ $7.56
500+ $7.56
1000+ $7.56
- +
x $8.6492
Ext. Price: $17.29
MOQ: 2
Mult: 1
TP70H150G4LSG-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 14.2A, QFN;
Quantity: 2894
Ship Date: 3-12 working days
1+ $2.6297
10+ $2.2656
100+ $2.2251
500+ $2.1847
1000+ $2.1847
- +
x $2.6297
Ext. Price: $13.14
MOQ: 5
Mult: 1
BSS139 L6327
Infineon Technologies
1 360mW 20V 250V 14Ω 40mA Freestanding 1individualNChannel SOT-23-3 SMD mount,glue mount 2.9mm*1.3mm*1.1mm
Quantity: 2981
Ship Date: 6-12 working days
600+ $0.2478
- +
x $0.2478
Ext. Price: $500.55
MOQ: 2020
Mult: 5
SPQ: 5
EPC2050
Efficient Power Conversion
2.5V@1mA 4nC@ 5 V 350V 180mΩ@ 6A,5V 6.3A 628pF@280V 1individualNChannel SMD mount
Quantity: 5000
Ship Date: 7-12 working days
2500+ $2.8613
- +
x $2.8613
Ext. Price: $7153.25
MOQ: 2500
Mult: 2500
SPQ: 1
IGLR60R340D1XUMA1
Infineon Technologies
41.6W(Tc) 1.6V@ 530µA 600V 87.7pF@400V 1individualNChannel SMD mount
Quantity: 4931
Ship Date: 15-19 working days
1+ $6.5076
100+ $5.1442
500+ $4.0182
- +
x $6.5076
Ext. Price: $6.50
MOQ: 1
Mult: 1
EPC2039
Efficient Power Conversion
6V,4V 2.5V@2mA 2.4nC@ 5 V 80V 25mΩ@ 6A,5V 6.8A 210pF@40V 1individualNChannel SMD mount
Quantity: 5000
Ship Date: 7-12 working days
2500+ $0.7257
5000+ $0.6956
- +
x $0.7257
Ext. Price: $1814.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2053
Efficient Power Conversion
6V 2.5V@9mA 14.8nC@ 5 V 100V 3.8mΩ@ 25A,5V 48A Freestandingwithbuilt-indiode 1.895nF@50V 1individualNChannel SMD mount
Quantity: 15000
Ship Date: 7-12 working days
2500+ $3.2156
- +
x $3.2156
Ext. Price: $8039.00
MOQ: 2500
Mult: 2500
SPQ: 1
TP65H030G4PRS-TR
transphorm
Quantity: 100
Ship Date: 9-14 working days
25+
10+ $8.3145
50+ $7.682
200+ $7.1415
750+ $6.624
- +
x $8.3145
Ext. Price: $349.20
MOQ: 42
Mult: 1
SPQ: 1300
TA9210D
PA RF GAN PWR 12.5W .03-4GHZ 32V
Quantity: 1044
Ship Date: 7-12 working days
1+ $69.7515
10+ $61.2192
25+ $58.267
100+ $54.2241
- +
x $69.7515
Ext. Price: $69.75
MOQ: 1
Mult: 1
SPQ: 1
TA9110K
PA RF GAN PWR 6W .03-4GHZ 32V
Quantity: 349
Ship Date: 7-12 working days
1+ $27
- +
x $27
Ext. Price: $27.00
MOQ: 1
Mult: 1
SPQ: 1
IGO60R070D1AUMA1
Infineon Technologies
1 125W(Tc) 10V 1.6V@2.6mA 5.8nC 600V 70mΩ 31A Freestanding 380pF@400V 1individualNChannel SOP SMD mount
Quantity: 518
Ship Date: 15-19 working days
19+
1+ $16.147
25+ $15.4906
50+ $14.8343
100+ $14.5717
300+ $14.4404
500+ $14.3091
1000+ $13.9153
5000+ $13.9153
- +
x $16.147
Ext. Price: $129.17
MOQ: 8
Mult: 1
SPQ: 1
TSG65N195CE RVG
Taiwan Semiconductor
Trans JFET N-CH 650V 11A GaN 8-Pin PDFN EP T/R
Quantity: 90000
Ship Date: 14-18 working days
100+ $6.2552
- +
x $6.2552
Ext. Price: $56296.80
MOQ: 9000
Mult: 9000
SPQ: 9000
EPC2035
Efficient Power Conversion
6V,4V 2.5V@ 800µA 1.15nC@ 5 V 60V 45mΩ@ 1A,5V 250μA 1A 115pF@30V 60V 1individualNChannel SMD mount 900μm*900μm*820μm
Quantity: 20900
Ship Date: 7-12 working days
2500+ $0.5819
5000+ $0.5424
7500+ $0.5381
- +
x $0.5819
Ext. Price: $1454.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2019
Efficient Power Conversion
1 6V,4V 2.5V@1.5mA 2.9nC@ 5 V 200V 42mΩ@ 7A,5V 100μA 8.5A 288pF@100V 200V 1individualNChannel SMD mount 2.77mm(length)*950μm(width)
Quantity: 47000
Ship Date: 7-12 working days
1000+ $1.9031
- +
x $1.9031
Ext. Price: $1903.10
MOQ: 1000
Mult: 1000
SPQ: 1
CLL3H0914LS-700U
AMPLEON
RF MOSFET GAN 50V SOT502B
Quantity: 47
Ship Date: 7-12 working days
1+ $560.805
- +
x $560.805
Ext. Price: $560.80
MOQ: 1
Mult: 1
SPQ: 1
EPC2111
Efficient Power Conversion
6V 2.5V@5mA 2.2nC@ 5V,5.7nC@ 5V 30V 19mΩ@ 15A,5V,8mΩ@ 15A,5V 16A 230pF@ 15V,590pF@ 15V 2individualNChannel SMD mount
Quantity: 17500
Ship Date: 7-12 working days
2500+ $1.5881
- +
x $1.5881
Ext. Price: $3970.25
MOQ: 2500
Mult: 2500
NTP8G206NG
ON Semiconductor
1 96W(Tc) 18V 2.6V@ 500µA 9.3nC@ 4.5 V 600V 180mΩ@ 11A,8V 90μA 17A Freestanding 760pF@480V 1individualNChannel TO-220 Through hole mounting 9.28mm(height)
Quantity: 7
Ship Date: 9-13 weeks
8+ $19.2801
- +
x $19.2801
Ext. Price: $501.28
MOQ: 26
Mult: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.