GaN FETs

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IGO60R070D1AUMA2
Infineon Technologies
125W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel DSO SMD mount
Quantity: 756
Ship Date: 9-13 working days
23+
1+ $7.9036
25+ $7.577
50+ $7.2504
100+ $7.1198
300+ $7.0545
500+ $6.9891
1000+ $6.7932
5000+ $6.7932
- +
x $7.9036
Ext. Price: $126.45
MOQ: 16
Mult: 1
SPQ: 1
GS-065-011-1-L-TR
Infineon Technologies
Quantity: 2468
Ship Date: 6-13 working days
1+ $5.796
10+ $4.444
100+ $3.5316
500+ $3.045
1000+ $2.6145
3000+ $2.604
- +
x $5.796
Ext. Price: $5.79
MOQ: 1
Mult: 1
SPQ: 1
A3G35H100-04SR3
NXP Semiconductors
2 8V 2.3V 125V 8.04mA 2individualNChannel NI-780S-4L SMD mount
Quantity: 1436
Ship Date: 9-13 working days
19+
1+ $87.2359
25+ $83.6311
50+ $80.0263
100+ $78.5844
300+ $77.8634
500+ $77.1424
1000+ $74.9796
5000+ $74.9796
- +
x $87.2359
Ext. Price: $174.47
MOQ: 2
Mult: 1
SPQ: 1
CLF1G0035-100PU
AMPLEON
common source,2elements 1individualNChannel SMD mount
Quantity: 16
Ship Date: 9-13 working days
16+
1+ $268.9676
25+ $257.8532
50+ $246.7388
100+ $242.2931
300+ $240.0702
500+ $237.8473
1000+ $231.1787
5000+ $231.1787
- +
x $268.9676
Ext. Price: $268.96
MOQ: 1
Mult: 1
SPQ: 1
EPC2024
Efficient Power Conversion
6V,4V 2.5V@19mA 40V 1.5mΩ@ 37A,5V 60A 2.1nF@20V 1individualNChannel SMD mount
Quantity: 3000
Ship Date: 7-12 working days
500+ $4.407
- +
x $4.407
Ext. Price: $2203.50
MOQ: 500
Mult: 500
SPQ: 1
TSG65N110CE RVG
Taiwan Semiconductor
Trans JFET N-CH 650V 18A GaN 8-Pin PDFN EP T/R
Quantity: 90000
Ship Date: 14-18 working days
100+ $10.331
- +
x $10.331
Ext. Price: $92979.00
MOQ: 9000
Mult: 9000
SPQ: 9000
TP65H050G4YS
transphorm
132W(Tc) 4.8V@ 700µA 24nC@ 10 V 650V 60mΩ@ 22A,10V 1nF@400V 1individualNChannel TO-247-4L Through hole mounting
Quantity: 276
Ship Date: 7-12 working days
1+ $14.5392
10+ $10.6642
450+ $8.801
- +
x $14.5392
Ext. Price: $14.53
MOQ: 1
Mult: 1
SPQ: 1
TP70H150G4LSG-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 14.2A, QFN;
Quantity: 2897
Ship Date: 3-12 working days
1+ $2.585
10+ $2.2271
100+ $2.1873
500+ $2.1476
1000+ $2.1476
- +
x $2.585
Ext. Price: $12.92
MOQ: 5
Mult: 1
EPC2214
Efficient Power Conversion
2.5V@2mA 2.2nC@ 5 V 80V 20mΩ@ 6A,5V 238pF@40V 1individualNChannel SMD mount
Quantity: 9880
Ship Date: 7-12 working days
2500+ $0.7654
5000+ $0.741
- +
x $0.7654
Ext. Price: $1913.50
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2031
Efficient Power Conversion
2.5V@15mA 17nC@ 5 V 60V 2.6mΩ@ 30A,5V 31A 1.8nF@300V 1individualNChannel SMD mount
Quantity: 13500
Ship Date: 7-12 working days
500+ $3.796
- +
x $3.796
Ext. Price: $1898.00
MOQ: 500
Mult: 500
SPQ: 1
EPC2212
Efficient Power Conversion
6V 2.5V@3mA 4nC@ 5 V 100V 13.5mΩ@ 11A,5V 407pF@50V 100V 1individualNChannel SMD mount 2.1mm(length)*1.6mm(width)
Quantity: 97500
Ship Date: 7-12 working days
2500+ $1.378
- +
x $1.378
Ext. Price: $3445.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2306ENGRT
Efficient Power Conversion
2.5V@7mA 16.3nC@ 5 V 100V 3.8mΩ@ 25A,5V 2.366nF@50V 1individualNChannel QFN-7 SMD mount
Quantity: 2239
Ship Date: 7-12 working days
1+ $6.8148
10+ $4.4065
100+ $3.185
500+ $3.1824
- +
x $6.8148
Ext. Price: $6.81
MOQ: 1
Mult: 1
SPQ: 1
TP65H070LSG-TR
transphorm
96W(Tc) 4.8V@ 700µA 9.3nC@ 10 V 650V 85mΩ@ 16A,10V 600pF@400V 1individualNChannel SMD mount
Quantity: 10500
Ship Date: 7-12 working days
500+ $7.735
- +
x $7.735
Ext. Price: $3867.50
MOQ: 500
Mult: 500
SPQ: 1
TP65H035G4WS
transphorm
156W(Tc) 4.8V@1mA 22nC@ 0 V 650V 41mΩ@ 30A,10V 46.5A 1.5nF@400V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 626
Ship Date: 7-12 working days
1+ $19.7496
30+ $12.3545
120+ $10.998
- +
x $19.7496
Ext. Price: $19.74
MOQ: 1
Mult: 1
SPQ: 1
HCG65200DAA
HXY MOSFET
Quantity: 720000
Ship Date: 5-7 working days
24+
2500+ $1.3818
5000+ $1.3588
7500+ $1.3242
- +
x $1.3818
Ext. Price: $3454.50
MOQ: 2500
Mult: 2500
SPQ: 2500
IGLD60R070D1AUMA3
Infineon Technologies
114W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel SON SMD mount
Quantity: 32
Ship Date: 7-13 working days
1+ $15.3352
50+ $10.0355
100+ $9.1992
250+ $8.494
1000+ $8.2276
- +
x $15.3352
Ext. Price: $30.67
MOQ: 2
Mult: 1
GAN140-650FBEZ
nexperia
113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V
Quantity: 5000
Ship Date: 8-13 working days
2500+ $2.3918
7500+ $2.3705
- +
x $2.3918
Ext. Price: $5979.50
MOQ: 2500
Mult: 2500
SPQ: 2500
IGLR60R340D1XUMA1
Infineon Technologies
41.6W(Tc) 1.6V@ 530µA 600V 87.7pF@400V 1individualNChannel SMD mount
Quantity: 4931
Ship Date: 14-16 working days
2+ $6.4418
100+ $5.0913
500+ $4.013
- +
x $6.4418
Ext. Price: $12.88
MOQ: 2
Mult: 1
EPC2039
Efficient Power Conversion
6V,4V 2.5V@2mA 2.4nC@ 5 V 80V 25mΩ@ 6A,5V 6.8A 210pF@40V 1individualNChannel SMD mount
Quantity: 7500
Ship Date: 7-12 working days
2500+ $0.7187
5000+ $0.689
- +
x $0.7187
Ext. Price: $1796.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2101
Efficient Power Conversion
2.5V@ 3mA,2.5V@ 12mA 2.7nC@ 5V,12nC@ 5V 60V 11.5mΩ@ 20A,5V,2.7mΩ@ 20A,5V 9.5A,38A 300pF@ 30V,1.2nF@ 30V 2individualNChannel SMD mount
Quantity: 263
Ship Date: 7-12 working days
1+ $11.6208
10+ $7.7293
100+ $6.4444
- +
x $11.6208
Ext. Price: $11.62
MOQ: 1
Mult: 1
SPQ: 1
EPC2053
Efficient Power Conversion
6V 2.5V@9mA 14.8nC@ 5 V 100V 3.8mΩ@ 25A,5V 48A Freestandingwithbuilt-indiode 1.895nF@50V 1individualNChannel SMD mount
Quantity: 7500
Ship Date: 7-12 working days
2500+ $3.185
- +
x $3.185
Ext. Price: $7962.50
MOQ: 2500
Mult: 2500
SPQ: 1
BSS139 L6327
Infineon Technologies
1 360mW 20V 250V 14Ω 40mA Freestanding 1individualNChannel SOT-23-3 SMD mount,glue mount 2.9mm*1.3mm*1.1mm
Quantity: 2981
Ship Date: 6-12 working days
600+ $0.2476
- +
x $0.2476
Ext. Price: $500.15
MOQ: 2020
Mult: 5
SPQ: 1
TA9210D
PA RF GAN PWR 12.5W .03-4GHZ 32V
Quantity: 619
Ship Date: 7-12 working days
1+ $69.0872
10+ $60.6362
25+ $57.7121
100+ $53.7077
- +
x $69.0872
Ext. Price: $69.08
MOQ: 1
Mult: 1
SPQ: 1
GAN140-650EBEZ
nexperia
113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V
Quantity: 5000
Ship Date: 8-13 working days
2500+ $2.5636
7500+ $2.5407
- +
x $2.5636
Ext. Price: $6409.00
MOQ: 2500
Mult: 2500
SPQ: 2500
NTP8G206NG
ON Semiconductor
1 96W(Tc) 18V 2.6V@ 500µA 9.3nC@ 4.5 V 600V 180mΩ@ 11A,8V 90μA 17A Freestanding 760pF@480V 1individualNChannel TO-220 Through hole mounting
Quantity: 7
Ship Date: 9-13 weeks
8+ $19.2801
- +
x $19.2801
Ext. Price: $501.28
MOQ: 26
Mult: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.