GaN FETs

Results:
GaN FETs Results:
Filter Results: -1/207
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
EPC2103
Efficient Power Conversion
6V 2.5V@7mA 6.5nC@ 5V 80V 5.5mΩ@ 20A,5V 28A 760pF@40V 2individualNChannel SMD mount
Quantity: 4000
Ship Date: 7-12 working days
500+ $5.3156
- +
x $5.3156
Ext. Price: $2657.80
MOQ: 500
Mult: 500
SPQ: 1
TP65H035G4WS
Renesas Electronics
GAN TRANSISTOR, 650V, 46A, TO-247-3;
Quantity: 407
Ship Date: 3-12 working days
1+ $15.0006
5+ $14.4006
10+ $13.2005
50+ $13.2005
100+ $12.9605
250+ $12.9605
- +
x $15.0006
Ext. Price: $15.00
MOQ: 1
Mult: 1
IGLT65R110D2ATMA1
Infineon Technologies
650V 15A 1individualNChannel SMD mount
Quantity: 1253
Ship Date: 3-12 working days
1+ $2.5773
10+ $2.2204
100+ $2.1808
500+ $2.1411
1000+ $2.1411
- +
x $2.5773
Ext. Price: $12.88
MOQ: 5
Mult: 1
STDRIVEG600
STMicroelectronics
STMicroelectronics 16Pin gate driver module, 21VPower Supplies, SO-16encapsulation
Quantity: 892
Ship Date: 15-19 working days
1+ $3.5499
- +
x $3.5499
Ext. Price: $3.54
MOQ: 1
Mult: 1
EPC2036
Efficient Power Conversion
6V,4V 2.5V@ 600µA 0.91nC@ 5 V 100V 65mΩ@ 1A,5V 250μA 1A 90pF@50V 100V 1individualNChannel BGA-4 SMD mount 900μm(length)*900μm(width)
Quantity: 20000
Ship Date: 7-12 working days
2500+ $0.5819
5000+ $0.5424
7500+ $0.5381
- +
x $0.5819
Ext. Price: $1454.75
MOQ: 2500
Mult: 2500
SPQ: 1
IGLR60R190D1XUMA1
Infineon Technologies
55.5W(Tc) 1.6V@ 960µA 600V 157pF@400V 1individualNChannel SMD mount
Quantity: 4934
Ship Date: 15-19 working days
1+ $8.7318
100+ $6.903
500+ $5.391
- +
x $8.7318
Ext. Price: $8.73
MOQ: 1
Mult: 1
IGT60R190D1ATMA1
Infineon Technologies
52W 10V 600V SO
Quantity: 1803
Ship Date: 15-19 working days
1+ $8.5725
100+ $6.7765
500+ $5.2925
- +
x $8.5725
Ext. Price: $8.57
MOQ: 1
Mult: 1
TP65H035G4YS
Renesas Electronics
GAN TRANSISTOR, 650V, 46.5A, TO-247;
Quantity: 1064
Ship Date: 3-12 working days
1+ $17.5563
5+ $15.7305
10+ $15.4496
50+ $15.4496
100+ $15.1687
250+ $15.1687
- +
x $17.5563
Ext. Price: $17.55
MOQ: 1
Mult: 1
TP65H030G4PQS-TR
Renesas Electronics
GAN TRANSISTOR, 650V, 55.7A, TOLL;
Quantity: 1898
Ship Date: 6-12 working days
1+ $13.0128
5+ $12.4538
10+ $11.3794
50+ $11.3441
100+ $11.1018
250+ $11.0658
- +
x $13.0128
Ext. Price: $26.02
MOQ: 2
Mult: 1
IGLT65R045D2ATMA1
Infineon Technologies
650V 38A 1individualNChannel SMD mount
Quantity: 1006
Ship Date: 3-12 working days
1+ $6.6226
5+ $6.3679
10+ $5.7056
50+ $5.6037
100+ $5.6037
250+ $5.6037
- +
x $6.6226
Ext. Price: $13.24
MOQ: 2
Mult: 1
EPC2215
Efficient Power Conversion
6V 2.5V@6mA 17.7nC@ 5 V 200V 8mΩ@ 20A,5V 1.79nF@100V 200V 1individualNChannel SMD mount 4.6mm(length)*1.6mm(width)
Quantity: 182500
Ship Date: 7-12 working days
2500+ $2.0833
- +
x $2.0833
Ext. Price: $5208.25
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2221
Efficient Power Conversion
100V 2individualNChannel SMD mount
Quantity: 2500
Ship Date: 7-12 working days
2500+ $1.2075
- +
x $1.2075
Ext. Price: $3018.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2252
Efficient Power Conversion
1 6V 3.5nC@ 5V 80V 11mΩ@ 5V 8.2A 440pF@ 50V 80V 9BGA 1.5mm(length)*1.5mm(width)
Quantity: 17500
Ship Date: 7-12 working days
2500+ $0.8079
5000+ $0.7875
- +
x $0.8079
Ext. Price: $2019.75
MOQ: 2500
Mult: 2500
SPQ: 1
CLF3H0060-10U
AMPLEON
RF MOSFET GAN HEMT 50V CDFM2
Quantity: 8
Ship Date: 7-12 working days
1+ $152.3655
20+ $124.3142
40+ $120.5521
- +
x $152.3655
Ext. Price: $152.36
MOQ: 1
Mult: 1
SPQ: 1
MRF24G300HR5
NXP Semiconductors
125V NI-780-4 base mount
Quantity: 558
Ship Date: 15-19 working days
19+
1+ $142.7193
25+ $136.9177
50+ $131.1161
100+ $128.7954
300+ $127.6351
500+ $126.4748
1000+ $122.9938
5000+ $122.9938
- +
x $142.7193
Ext. Price: $142.71
MOQ: 1
Mult: 1
SPQ: 1
IGC019S06S1XTMA1
Infineon Technologies
GAN TRANSISTOR, 60V, 99A, TSON;
Quantity: 3424
Ship Date: 3-12 working days
1+ $2.6983
10+ $2.3246
100+ $2.2831
500+ $2.2416
1000+ $2.2416
- +
x $2.6983
Ext. Price: $10.79
MOQ: 4
Mult: 1
G1N65R150TA-N
GaNext
Quantity: 10859
Ship Date: 5-10 working days
22+
150+ $1.052
300+ $1.052
450+ $1.052
- +
x $1.052
Ext. Price: $157.80
MOQ: 150
Mult: 1
GANE3R9-150QBAZ
nexperia
GAN TRANSISTOR, 100A, 20NC, VQFN;
Quantity: 2248
Ship Date: 3-12 working days
1+ $12.4335
5+ $11.9731
10+ $11.052
50+ $11.052
100+ $10.8679
250+ $10.8679
- +
x $12.4335
Ext. Price: $12.43
MOQ: 1
Mult: 1
GAN111-650WSBQ
nexperia
Transistor GaNFET N-Ch. 650V/21A TO247-3
Quantity: 58
Ship Date: 12-16 working days
1+ $9.925
- +
x $9.925
Ext. Price: $506.17
MOQ: 51
Mult: 1
SPQ: 1
GAN3R2-100CBEAZ
nexperia
394W 6V 9.2nC@ 5V 100V 3.2mΩ@ 5V 1nF@ 50V WLCSP SMD mount
Quantity: 1145
Ship Date: 3-12 working days
1+ $5.0187
10+ $4.4611
100+ $4.3866
500+ $4.3866
1000+ $4.3866
- +
x $5.0187
Ext. Price: $10.03
MOQ: 2
Mult: 1
EPC2054
Efficient Power Conversion
2.5V@1mA 4.3nC@ 5 V 200V 43mΩ@ 1A,5V 3A 573pF@100V 200V 1individualNChannel SMD mount 1.3mm(length)*1.3mm(width)
Quantity: 95000
Ship Date: 7-12 working days
2500+ $0.798
- +
x $0.798
Ext. Price: $1995.00
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2101
Efficient Power Conversion
2.5V@ 3mA,2.5V@ 12mA 2.7nC@ 5V,12nC@ 5V 60V 11.5mΩ@ 20A,5V,2.7mΩ@ 20A,5V 9.5A,38A 300pF@ 30V,1.2nF@ 30V 2individualNChannel SMD mount
Quantity: 500
Ship Date: 7-12 working days
500+ $5.3156
- +
x $5.3156
Ext. Price: $2657.80
MOQ: 500
Mult: 500
SPQ: 1
EPC2030
Efficient Power Conversion
2.5V@16mA 18nC@ 5 V 40V 2.4mΩ@ 30A,5V 31A 1.9nF@20V 1individualNChannel SMD mount
Quantity: 2500
Ship Date: 7-12 working days
500+ $3.2419
- +
x $3.2419
Ext. Price: $1620.95
MOQ: 500
Mult: 500
SPQ: 1
EPC2012C
Efficient Power Conversion
6V,4V 2.5V@1mA 1.3nC@ 5 V 200V 100mΩ@ 3A,5V 5A 140pF@100V 1individualNChannel SMD mount
Quantity: 5000
Ship Date: 7-12 working days
2500+ $1.2863
- +
x $1.2863
Ext. Price: $3215.75
MOQ: 2500
Mult: 2500
SPQ: 1
BSL202SN L6327
Infineon Technologies
1 2W 12V 8.7nC@ 4.5V 20V 22mΩ 7.5A Freestanding 1individualNChannel TSOP-6 SMD mount,glue mount 3mm*1.5mm*1.1mm
Quantity: 605
Ship Date: 15-19 working days
09+
500+ $0.1461
1000+ $0.1421
5000+ $0.1421
- +
x $0.1461
Ext. Price: $120.09
MOQ: 822
Mult: 1
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.