GaN FETs

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GAN063-650WSAQ
nexperia
143W(Ta) 20V 4.5V@1mA 15nC@ 10 V 650V 60mΩ@ 25A,10V 34.5A 1nF@400V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 260
Ship Date: 8-13 working days
30+ $13.1177
90+ $13.0006
- +
x $13.1177
Ext. Price: $393.53
MOQ: 30
Mult: 30
SPQ: 30
IGO60R070D1AUMA1
Infineon Technologies
1 125W(Tc) 10V 1.6V@2.6mA 5.8nC 600V 70mΩ 31A Freestanding 380pF@400V 1individualNChannel SOP SMD mount
Quantity: 2073
Ship Date: 9-13 working days
19+
1+ $15.8845
25+ $15.2281
50+ $14.5717
100+ $14.3091
300+ $14.1779
500+ $14.0466
1000+ $13.6528
5000+ $13.6528
- +
x $15.8845
Ext. Price: $127.07
MOQ: 8
Mult: 1
SPQ: 1
TSG65N195CE RVG
Taiwan Semiconductor
Trans JFET N-CH 650V 11A GaN 8-Pin PDFN EP T/R
Quantity: 90000
Ship Date: 14-18 working days
100+ $6.2552
- +
x $6.2552
Ext. Price: $56296.80
MOQ: 9000
Mult: 9000
SPQ: 9000
TA9110K
PA RF GAN PWR 6W .03-4GHZ 32V
Quantity: 402
Ship Date: 7-12 working days
1+ $27
- +
x $27
Ext. Price: $27.00
MOQ: 1
Mult: 1
SPQ: 1
EPC2012C
Efficient Power Conversion
6V,4V 2.5V@1mA 1.3nC@ 5 V 200V 100mΩ@ 3A,5V 5A 140pF@100V 1individualNChannel SMD mount
Quantity: 3045
Ship Date: 7-12 working days
1+ $4.0068
10+ $2.5282
100+ $1.7694
500+ $1.5594
- +
x $4.0068
Ext. Price: $4.00
MOQ: 1
Mult: 1
SPQ: 1
EPC2035
Efficient Power Conversion
6V,4V 2.5V@ 800µA 1.15nC@ 5 V 60V 45mΩ@ 1A,5V 250μA 1A 115pF@30V 60V 1individualNChannel SMD mount 900μm(length)*900μm(width)
Quantity: 15000
Ship Date: 7-12 working days
2500+ $0.5763
5000+ $0.5373
7500+ $0.533
- +
x $0.5763
Ext. Price: $1440.75
MOQ: 2500
Mult: 2500
SPQ: 1
EPC2019
Efficient Power Conversion
1 6V,4V 2.5V@1.5mA 2.9nC@ 5 V 200V 42mΩ@ 7A,5V 100μA 8.5A 288pF@100V 200V 1individualNChannel SMD mount 2.77mm(length)*950μm(width)
Quantity: 52000
Ship Date: 7-12 working days
1000+ $1.885
- +
x $1.885
Ext. Price: $1885.00
MOQ: 1000
Mult: 1000
SPQ: 1
CLL3H0914LS-700U
AMPLEON
RF MOSFET GAN 50V SOT502B
Quantity: 47
Ship Date: 7-12 working days
1+ $555.464
- +
x $555.464
Ext. Price: $555.46
MOQ: 1
Mult: 1
SPQ: 1
EPC2111
Efficient Power Conversion
6V 2.5V@5mA 2.2nC@ 5V,5.7nC@ 5V 30V 19mΩ@ 15A,5V,8mΩ@ 15A,5V 16A 230pF@ 15V,590pF@ 15V 2individualNChannel SMD mount
Quantity: 17500
Ship Date: 7-12 working days
2500+ $1.573
- +
x $1.573
Ext. Price: $3932.50
MOQ: 2500
Mult: 2500
TP65H015G5WS
transphorm
266W(Tc) 4.8V@2mA 100nC@ 10 V 650V 18mΩ@ 60A,10V 93A 5.218nF@400V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 504
Ship Date: 7-12 working days
1+ $33.54
30+ $22.4619
120+ $22.3637
- +
x $33.54
Ext. Price: $33.54
MOQ: 1
Mult: 1
SPQ: 1
IGC033S101XTMA1
Infineon Technologies
100V 76A 1individualPChannel SMD mount
Quantity: 5000
Ship Date: 6-13 working days
5000+ $2.1125
15000+ $2.0956
50000+ $2.0787
- +
x $2.1125
Ext. Price: $10562.50
MOQ: 5000
Mult: 5000
SPQ: 5000
TP65H035G4WS
Renesas Electronics
GAN TRANSISTOR, 650V, 46A, TO-247-3;
Quantity: 407
Ship Date: 3-12 working days
1+ $13.6045
5+ $13.0603
10+ $11.972
50+ $11.972
100+ $11.7543
250+ $11.7543
- +
x $13.6045
Ext. Price: $13.60
MOQ: 1
Mult: 1
IGT60R190D1ATMA1
Infineon Technologies
52W 10V 600V SO
Quantity: 1953
Ship Date: 14-16 working days
1+ $9.4273
100+ $7.4535
500+ $5.8705
- +
x $9.4273
Ext. Price: $9.42
MOQ: 1
Mult: 1
IGLR60R190D1XUMA1
Infineon Technologies
55.5W(Tc) 1.6V@ 960µA 600V 157pF@400V 1individualNChannel SMD mount
Quantity: 4934
Ship Date: 14-16 working days
1+ $8.6423
100+ $6.8336
500+ $5.3824
- +
x $8.6423
Ext. Price: $8.64
MOQ: 1
Mult: 1
EPC2103
Efficient Power Conversion
6V 2.5V@7mA 6.5nC@ 5V 80V 5.5mΩ@ 20A,5V 28A 760pF@40V 2individualNChannel SMD mount
Quantity: 6000
Ship Date: 7-12 working days
500+ $5.265
- +
x $5.265
Ext. Price: $2632.50
MOQ: 500
Mult: 500
SPQ: 1
EPC2036
Efficient Power Conversion
6V,4V 2.5V@ 600µA 0.91nC@ 5 V 100V 65mΩ@ 1A,5V 250μA 1A 90pF@50V 100V 1individualNChannel BGA-4 SMD mount 900μm(length)*900μm(width)
Quantity: 17500
Ship Date: 7-12 working days
2500+ $0.5763
5000+ $0.5373
7500+ $0.533
- +
x $0.5763
Ext. Price: $1440.75
MOQ: 2500
Mult: 2500
SPQ: 1
TPH3208LDG
transphorm
96W(Tc) 18V 2.6V@ 300µA 14nC@ 8V 650V 130mΩ@ 13A,8V 20A 760pF@400V 1individualNChannel PQFN-3 SMD mount
Quantity: 9
Ship Date: 7-12 working days
1+ $15.262
- +
x $15.262
Ext. Price: $15.26
MOQ: 1
Mult: 1
SPQ: 1
TP65H150BG4JSG-TR
transphorm
83W(Tc) 2.8V@ 500µA 4.9nC@ 10 V 650V 180mΩ@ 10A,6V 400pF@400V 1individualNChannel SMD mount
Quantity: 2008
Ship Date: 7-12 working days
1+ $5.4432
10+ $3.4798
100+ $2.4808
500+ $2.355
- +
x $5.4432
Ext. Price: $5.44
MOQ: 1
Mult: 1
SPQ: 1
GAN190-650FBEZ
nexperia
125W(Tc) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-5060-5 SMD mount
Quantity: 2500
Ship Date: 8-13 working days
2500+ $1.5332
7500+ $1.5195
- +
x $1.5332
Ext. Price: $3833.00
MOQ: 2500
Mult: 2500
SPQ: 2500
GS-065-008-1-L-MR
Infineon Technologies
1.4V@1.74mA 1.5nC@ 6 V 650V 225mΩ@ 2.2A,6V 52pF@400V 1individualNChannel SMD mount
Quantity: 707
Ship Date: 6-13 working days
1+ $5.497
10+ $4.213
100+ $3.348
250+ $3.348
500+ $2.877
1000+ $2.4675
- +
x $5.497
Ext. Price: $5.49
MOQ: 1
Mult: 1
SPQ: 1
GANE3R9-150QBAZ
nexperia
GAN TRANSISTOR, 100A, 20NC, VQFN;
Quantity: 2257
Ship Date: 3-12 working days
1+ $6.8367
5+ $6.8367
10+ $6.1257
50+ $6.0163
100+ $5.9069
250+ $5.9069
- +
x $6.8367
Ext. Price: $13.67
MOQ: 2
Mult: 1
IGC019S06S1XTMA1
Infineon Technologies
GAN TRANSISTOR, 60V, 99A, TSON;
Quantity: 3743
Ship Date: 3-12 working days
1+ $2.7347
10+ $2.3561
100+ $2.314
500+ $2.2719
1000+ $2.2719
- +
x $2.7347
Ext. Price: $10.93
MOQ: 4
Mult: 1
CLF3H0060-10U
AMPLEON
RF MOSFET GAN HEMT 50V CDFM2
Quantity: 70
Ship Date: 7-12 working days
1+ $150.9144
20+ $123.1303
40+ $119.404
- +
x $150.9144
Ext. Price: $150.91
MOQ: 1
Mult: 1
SPQ: 1
IGT60R190D1SATMA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube CoolGaNseries, Vds=600 V, 12.5 A, HSOF-8encapsulation, surface mount, 8Pin
Quantity: 1
Ship Date: 12-18 working days
3+ $9.4975
10+ $7.332
- +
x $9.4975
Ext. Price: $56.98
MOQ: 6
Mult: 1
BSL202SN L6327
Infineon Technologies
1 2W 12V 8.7nC@ 4.5V 20V 22mΩ 7.5A Freestanding 1individualNChannel TSOP-6 SMD mount,glue mount 3mm*1.5mm*1.1mm
Quantity: 622
Ship Date: 9-13 working days
09+
500+ $0.1434
1000+ $0.1394
5000+ $0.1394
- +
x $0.1434
Ext. Price: $116.15
MOQ: 810
Mult: 1
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.