GaN FETs

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CLF1G0060-10U
AMPLEON
Freestanding 1individualNChannel CDFM-2 base mount,SMD mount
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Ship Date: 7-12 working days
60+ $106.8536
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EPC2100ENGRT
Efficient Power Conversion
2.5V@ 4mA,2.5V@ 16mA 4.9nC@ 15V,19nC@ 15V 30V 8.2mΩ@ 25A,5V,2.1mΩ@ 25A,5V 10A,40A 475pF@ 15V,1.96nF@ 15V 2individualNChannel SMD mount
Quantity: 0
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500+ $3.952
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TPH3208PS
transphorm
96W(Tc) 18V 2.6V@ 300µA 14nC@ 8V 650V 130mΩ@ 13A,8V 20A 760pF@400V 1individualNChannel TO-220AB Through hole mounting
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GS66516T-MR
Infineon Technologies
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10+ $37.6596
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CLF1G0035-50H
AMPLEON
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1+ $227.8533
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5000+ $195.8409
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EPC2106ENGRT
Efficient Power Conversion
2.5V@ 600µA 0.73nC@ 5V 100V 70mΩ@ 2A,5V 1.7A 75pF@50V 2individualNChannel SMD mount
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TPH3206PD
transphorm
96W(Tc) 18V 2.6V@ 500µA 9.3nC@ 4.5V 600V 180mΩ@ 11A,8V 17A 760pF@480V 1individualNChannel TO-220 Through hole mounting
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A5G35S004NT6
NXP Semiconductors
Air Fast RF Power GAN Transistor
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TPH3206LDG-TR
transphorm
96W(Tc) 2.6V@ 500µA 9.3nC@ 4.5V 600V 180mΩ@ 11A,8V 760pF@480V 1individualNChannel PQFN SMD mount
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TPH3208PD
transphorm
14nC@ 8V 650V 20A 760pF@400V 1individualNChannel Through hole mounting
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TPD3215M
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470W 28nC@ 8V 600V 34mΩ@ 30A,8V 70A 2.26nF@100V 2individualNChannel Through hole mounting
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CLF1G0060S-10U
AMPLEON
Trans RF FET N-CH 150V GaN 3-Pin CDFM Bulk
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EPC2104ENGRT
Efficient Power Conversion
2.5V@5.5mA 7nC@ 5V 100V 6.3mΩ@ 20A,5V 23A 800pF@50V 2individualNChannel SMD mount
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TPH3206LSB
transphorm
81W(Tc) 18V 2.6V@ 500µA 6.2nC@ 4.5V 650V 180mΩ@ 10A,8V 16A 720pF@480V 1individualNChannel SMD mount
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GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.