SiC MOSFETs

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SiC MOSFETs Results:
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NTHL040N120SC1-VB
VBsemi
TO247;N—ChannelChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2~4V;
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
E3M0040120K-VB
VBsemi
,。TO247-4L;NChannel,1200V,60A,RDS(ON)=40mΩ@VGS=10V,VGS= -10~22V,Vth=2.5~4.5V;、-,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
IMW65R083M1H-VB
VBsemi
,。TO247;NChannel,650V,30A,RDS(ON)=70mΩ@VGS=18V,VGS= -10~22V,Vth=2~5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.1087
30+ $2.0741
50+ $2.0396
1000+ $1.9877
- +
x $2.1087
Ext. Price: $2.10
MOQ: 1
Mult: 1
SPQ: 300
IMZ120R030M1HXKSA1-VB
VBsemi
,。TO247-4L;NChannel,1200V,60A,RDS(ON)=40mΩ@VGS=10V,VGS= -10~22V,Vth=2.5~4.5V;、-,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
LSIC1MO120E0160-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
SCT3030KLGC11-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
SCT025W120G3AG-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
UF3SC065030B7S
Qorvo
43nC@ 12 V 214W(Tc) 1.5nF@100V 35mΩ@ 40A,12V 650V 6V@10mA 1individualNChannel D2PAK-7 SMD mount
Quantity: 584
Ship Date: 3-12 working days
1+ $17.9708
10+ $17.329
100+ $17.329
500+ $17.329
800+ $17.329
1600+ $17.329
2400+ $17.329
- +
x $17.9708
Ext. Price: $35.94
MOQ: 2
Mult: 1
UF3SC120009K4S
Qorvo
234nC@ 15 V 789W(Tc) 8.512nF@100V 11mΩ@ 100A,12V 1.2KV 6V@10mA 1individualNChannel TO-247-4 Through hole mounting
Quantity: 478
Ship Date: 3-12 working days
1+ $97.2083
5+ $97.2083
10+ $95.4408
50+ $95.4408
- +
x $97.2083
Ext. Price: $97.20
MOQ: 1
Mult: 1
G3R160MT12D
GeneSiC Semiconductor
28nC@ 15 V 123W(Tc) 730pF@800V 192mΩ@ 10A,15V 22A 1.2KV 2.69V@5mA 18V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 1425
Ship Date: 7-12 working days
1+ $7.0416
10+ $6.084
25+ $5.824
100+ $5.4496
250+ $5.2208
500+ $5.044
1000+ $4.888
- +
x $7.0416
Ext. Price: $7.04
MOQ: 1
Mult: 1
SPQ: 1
NXH020P120MNF1PG
ON Semiconductor
213.5nC@ 20V 2.42nF@800V 119W (Tj) 30mΩ@ 50A,20V 1.2KV 4.3V@20mA base mount
Quantity: 28
Ship Date: 7-12 working days
1+ $127.0776
28+ $109.148
- +
x $127.0776
Ext. Price: $127.07
MOQ: 1
Mult: 1
SPQ: 1
E3M0021120K
isc
Quantity: 1000
Ship Date: 3-6 weeks
20+
1000+ $10.7654
3000+ $10.3168
5000+ $9.4197
- +
x $10.7654
Ext. Price: $10765.40
MOQ: 1000
Mult: 1000
SPQ: 1000
SRD20V65AT3-G
SANRISE-TECH
SIC SBD 650V 20A
Quantity: 5000
Ship Date: 7-10 working days
21+
10+ $2.2964
50+ $2.1324
200+ $1.9683
2000+ $1.8043
2010+ $1.5156
- +
x $2.2964
Ext. Price: $22.96
MOQ: 10
Mult: 1
SPQ: 240
STPSC2006CW
isc
Quantity: 1000
Ship Date: 3-6 weeks
20+
1000+ $4.037
3000+ $3.8688
5000+ $3.5324
- +
x $4.037
Ext. Price: $4037.00
MOQ: 1000
Mult: 1000
SPQ: 1000
SCTW35N65G2VAG
isc
Quantity: 1000
Ship Date: 3-6 weeks
20+
1000+ $11.7073
3000+ $11.2196
5000+ $10.244
- +
x $11.7073
Ext. Price: $11707.30
MOQ: 1000
Mult: 1000
SPQ: 1000
STPSC8065D
isc
Quantity: 1000
Ship Date: 3-6 weeks
20+
1000+ $2.8259
3000+ $2.7081
5000+ $2.4727
- +
x $2.8259
Ext. Price: $2825.90
MOQ: 1000
Mult: 1000
SPQ: 1000
LSIC1MO170E0750
HXY MOSFET
ID:5A,VDSS:1700V,RDON:800mR,VGS:22V,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
30+ $2.6913
60+ $2.6465
90+ $2.5792
570+ $2.355
- +
x $2.6913
Ext. Price: $80.73
MOQ: 30
Mult: 30
SPQ: 30
C3M0040120K
HXY MOSFET
ID:60A,VDSS:1200V,RDON:40mR,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
30+ $3.738
60+ $3.6757
90+ $3.5822
420+ $3.2707
- +
x $3.738
Ext. Price: $112.14
MOQ: 30
Mult: 30
SPQ: 30
E3M0075120K
HXY MOSFET
ID:32A,VDSS:1200V,RDON:75mR,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
30+ $5.8312
60+ $5.7341
90+ $5.5883
270+ $5.1024
- +
x $5.8312
Ext. Price: $174.93
MOQ: 30
Mult: 30
SPQ: 30
S2M0080120D
SMC
54nC@ 20 V 231W(Tc) 1.324nF@1000V 100mΩ@ 20A,20V 41A 1.2KV 4V@10mA 1individualNChannel TO-247AD Through hole mounting
Quantity: 186
Ship Date: 7-12 working days
1+ $7.6024
25+ $4.4916
100+ $3.7509
500+ $3.1612
- +
x $7.6024
Ext. Price: $7.60
MOQ: 1
Mult: 1
SPQ: 1
G3R40MT12K
GeneSiC Semiconductor
106nC@ 15 V 333W(Tc) 2.929nF@800V 48mΩ@ 35A,15V 71A 1.2KV 2.69V@10mA 18V 1individualNChannel TO-247-4 Through hole mounting
Quantity: 32
Ship Date: 6-14 working days
1+ $22.3462
5+ $20.4285
10+ $19.6435
50+ $18.8737
100+ $18.4611
250+ $18.0471
- +
x $22.3462
Ext. Price: $22.34
MOQ: 1
Mult: 1
SRD10V65AT2-G
SANRISE-TECH
SIC SBD 650V 10A
Quantity: 5000
Ship Date: 7-10 working days
21+
10+ $1.2985
50+ $1.2058
200+ $1.113
2000+ $1.0203
2010+ $0.857
- +
x $1.2985
Ext. Price: $12.98
MOQ: 10
Mult: 1
SPQ: 240
SCT3040KRC14
ROHM
107nC@ 18 V 262W 1.337nF@800V 52mΩ@ 20A,18V 55A 1.2KV 5.6V@10mA 22V,4V 1individualNChannel TO-247-4L Through hole mounting
Quantity: 240
Ship Date: 14-19 working days
240+ $70.224
- +
x $70.224
Ext. Price: $16853.75
MOQ: 240
Mult: 240
SPQ: 1
NVHL020N090SC1
ON Semiconductor
196nC@ 15 V 503W(Tc) 4.415nF@450V 900V 503W 1 28mΩ@ 60A,15V 118A 900V 4.3V@20mA 19V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 450
Ship Date: 3-5 working days
10+ $31.6794
20+ $30.9191
40+ $29.9054
80+ $28.3848
- +
x $31.6794
Ext. Price: $316.79
MOQ: 10
Mult: 1
SPQ: 450
NVH4L040N120SC1
ON Semiconductor
onsemi NChannel EnhancedMOSFETTube NVHseries, Vds=1200 V, 58 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Quantity: 440
Ship Date: 3-5 working days
10+ $35.481
20+ $34.8896
40+ $34.2983
80+ $31.9329
- +
x $35.481
Ext. Price: $354.81
MOQ: 10
Mult: 1
SPQ: 440

SiC MOSFETs

Sic mos is a Latin phrase that translates to "just as it is" or "thus and so." It is often used in legal documents, historical texts, and scholarly works to indicate that a quoted text is being reproduced exactly as it appears in the original source, including any errors or peculiarities.

Definition:
"Sic" is a Latin term used to acknowledge a mistake or unusual usage in a quoted text, indicating that the error is not the fault of the person quoting but is present in the original source.

Function:
The primary function of "sic mos" is to maintain the integrity of the original text. It serves as a disclaimer, informing the reader that any errors, archaic spellings, or unusual phrasings are not the result of a mistake by the person quoting the text but are instead a faithful reproduction of the original.

Applications:
1. Legal Documents: In legal contexts, "sic" is used to ensure that the exact wording of a document is preserved, even if it contains errors.
2. Historical Texts: Historians use "sic" to reproduce historical documents accurately, preserving the original language and any errors that might provide insight into the time period.
3. Scholarly Works: Scholars use "sic" in their research to show that they are presenting a source as it was written, without altering the text to correct perceived mistakes.

Selection Criteria:
When deciding to use "sic mos," consider the following:
1. Accuracy: Ensure that the quoted text is an exact match to the original.
2. Clarity: Use "sic" to clarify that any errors are not your own but are present in the source material.
3. Context: Consider whether the error in the original text is significant enough to warrant its inclusion or if it might confuse the reader.
4. Purpose: Determine if the inclusion of the error is necessary for the understanding of the text or if it serves a specific analytical purpose.

In summary, "sic mos" is a tool used to maintain the authenticity of quoted material, ensuring that any peculiarities are attributed to the original source rather than the person quoting it. It is a critical component in maintaining the integrity of historical, legal, and scholarly texts.
Please refer to the product rule book for details.