SiC MOSFETs

Results:
SiC MOSFETs Results:
Filter Results: -1/1515
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
IAUTN06S5N008GATMA1
Infineon Technologies
504A 60V 1individualNChannel SMD mount
Quantity: 1021
Ship Date: 3-12 working days
1+ $3.972
10+ $3.5589
100+ $3.4318
500+ $3.4318
1000+ $3.4318
- +
x $3.972
Ext. Price: $31.77
MOQ: 8
Mult: 1
SCTW40N120G2V
STMicroelectronics
MOSTube SCTW40Nseries, Vds=1200 V, 36 A, HiP247encapsulation, Through hole mounting, 3Pin
Quantity: 414
Ship Date: 3-12 working days
1+ $17.2321
5+ $15.44
10+ $15.1643
50+ $14.8886
100+ $14.8886
250+ $14.8886
- +
x $17.2321
Ext. Price: $34.46
MOQ: 2
Mult: 1
IMBG120R022M2HXTMA1
Infineon Technologies
87A 1.2KV 1individualNChannel SMD mount
Quantity: 1080
Ship Date: 3-12 working days
1+ $14.2445
5+ $13.6747
10+ $12.5351
50+ $12.5351
100+ $12.3072
250+ $12.3072
- +
x $14.2445
Ext. Price: $28.48
MOQ: 2
Mult: 1
DIW120SIC023-AQ
Diotec Semiconductor
45nC@ 18 V 600W(Tc) 6.15nF@1000V 23mΩ@ 75A,18V 1.2KV 2.9V@ 250µA 1individualNChannel TO-247 Through hole mounting
Quantity: 29
Ship Date: 3-12 working days
1+ $79.6077
5+ $78.1862
10+ $76.7646
50+ $76.7646
- +
x $79.6077
Ext. Price: $79.60
MOQ: 1
Mult: 1
IMBG65R022M1HXTMA1
Infineon Technologies
Infineon NChannelMOSTube, Vds=650 V, 64 A, TO-263-7encapsulation, surface mount, 7Pin
Quantity: 802
Ship Date: 3-12 working days
1+ $13.4979
5+ $12.958
10+ $11.8782
50+ $11.8782
100+ $11.6622
250+ $11.6622
- +
x $13.4979
Ext. Price: $40.49
MOQ: 3
Mult: 1
AIMBG120R010M1XTMA1
Infineon Technologies
178nC@ 20V 882W 5.703nF@ 800V 11.3mΩ@ 20V 1.2KV 23V 1individualNChannel TO-263 SMD mount
Quantity: 950
Ship Date: 3-12 working days
1+ $37.1484
5+ $37.1484
10+ $35.8217
50+ $35.8217
100+ $35.8217
- +
x $37.1484
Ext. Price: $37.14
MOQ: 1
Mult: 1
IMDQ75R008M1HXUMA1
Infineon Technologies
173A 750V 1individualNChannel SMD mount
Quantity: 758
Ship Date: 10-15 working days
24+
750+ $20.9952
- +
x $20.9952
Ext. Price: $15746.40
MOQ: 750
Mult: 750
SPQ: 750
FCA150AC120
SanRex
25.3nF@20V 1.135KW(Tc) 9.3mΩ@ 150A,20V 1.2KV 5V@4.5mA 2individualNChannel base mount
Quantity: 43
Ship Date: 10-15 working days
1+ $1362.4083
- +
x $1362.4083
Ext. Price: $1362.40
MOQ: 1
Mult: 1
SPQ: 10
MSC750SMA170S
Microchip Technology
100μA 11nC@ 20V 63W 184pF@ 1000V 940mΩ@ 20V 6A 1.7KV 23V D3PAK SMD mount
Quantity: 75
Ship Date: 6-13 working days
1+ $7.1185
30+ $6.1668
120+ $5.208
- +
x $7.1185
Ext. Price: $7.11
MOQ: 1
Mult: 1
SPQ: 1
DIW120SIC059-AQ
Diotec Semiconductor
SiC MOSFET, TO-247-3L, N, 65A, 1200V, 53mΩ, 175°C, AEC-Q101
Quantity: 29
Ship Date: 3-12 working days
1+ $44.8562
5+ $44.0552
10+ $43.2542
50+ $43.2542
100+ $43.2542
- +
x $44.8562
Ext. Price: $44.85
MOQ: 1
Mult: 1
SCT3030ARC14
ROHM
ROHM NChannel EnhancedMOSTube, Vds=650 V, 70 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Quantity: 5
Ship Date: 8-13 working days
1+ $44.6596
8+ $43.4264
- +
x $44.6596
Ext. Price: $89.31
MOQ: 2
Mult: 1
SCT20N120AG
STMicroelectronics
STMicroelectronics Nchannel depletion modeSiC Power module SCTseries, Vds=1200 V, 16 A, HiP247encapsulation, Through hole mounting, 3Pin
Quantity: 570
Ship Date: 7-13 working days
8+ $16.6254
15+ $16.2928
- +
x $16.6254
Ext. Price: $133.00
MOQ: 8
Mult: 1
IMZ120R045M1-VB
VBsemi
TO247-4L;N—ChannelChannel,1200V,60A,RDS(ON)=40mΩ@VGS=18V,VGS= -10~22V;
Quantity: 30000
Ship Date: 9-16 working days
25+
1+ $11.2143
30+ $11.0305
50+ $10.8466
1000+ $10.5709
- +
x $11.2143
Ext. Price: $11.21
MOQ: 1
Mult: 1
SPQ: 1000
SCT3060AR-VB
VBsemi
,。TO247-4L;NChannel,650V,40A,RDS(ON)=50mΩ@VGS=18V,VGS= -10~22V,Vth=2~5V。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.3004
30+ $2.2627
50+ $2.225
1000+ $2.1684
- +
x $2.3004
Ext. Price: $2.30
MOQ: 1
Mult: 1
SPQ: 300
SCT2080KEHR-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
SCT4036KEHR-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
SCT4090KEHR-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
C4D02120A
isc
Quantity: 1000
Ship Date: 3-6 weeks
20+
1000+ $1.2112
3000+ $1.1606
5000+ $1.0597
- +
x $1.2112
Ext. Price: $1211.20
MOQ: 1000
Mult: 1000
SPQ: 1000
NTBG015N065SC1
ON Semiconductor
onsemi NChannelMOSTube SiC Powerseries, Vds=650 V, 145 A, D2PAK (TO-263)encapsulation, surface mount, 7Pin
Quantity: 800
Ship Date: 6-13 working days
800+ $22.7963
2400+ $22.6139
8000+ $22.4315
- +
x $22.7963
Ext. Price: $18237.04
MOQ: 800
Mult: 800
SPQ: 800
NXH010P90MNF1PTG
ON Semiconductor
onsemi SiC Power module, Vds=900 V, 154 A, F1-2PACKencapsulation, Through hole mounting
Quantity: 336
Ship Date: 6-13 working days
28+ $161.0025
84+ $159.7145
280+ $158.4265
- +
x $161.0025
Ext. Price: $4508.07
MOQ: 28
Mult: 28
SPQ: 28
IMT65R033M2HXUMA1
Infineon Technologies
N-CH 650V 68A 33mOhm at 15V HSOF-8
Quantity: 4000
Ship Date: 8-17 working days
2000+ $4.6805
- +
x $4.6805
Ext. Price: $9361.00
MOQ: 2000
Mult: 2000
SPQ: 2000
C3M0040120K1-VB
VBsemi
,。TO247-4L;NChannel,1200V,60A,RDS(ON)=40mΩ@VGS=10V,VGS= -10~22V,Vth=2.5~4.5V;、-,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
AIMW120R035M1HXKSA1-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
AIMZHN120R060M1T-VB
VBsemi
,。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
AIMZH120R080M1TXKSA1-VB
VBsemi
,。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300

SiC MOSFETs

Sic mos is a Latin phrase that translates to "just as it is" or "thus and so." It is often used in legal documents, historical texts, and scholarly works to indicate that a quoted text is being reproduced exactly as it appears in the original source, including any errors or peculiarities.

Definition:
"Sic" is a Latin term used to acknowledge a mistake or unusual usage in a quoted text, indicating that the error is not the fault of the person quoting but is present in the original source.

Function:
The primary function of "sic mos" is to maintain the integrity of the original text. It serves as a disclaimer, informing the reader that any errors, archaic spellings, or unusual phrasings are not the result of a mistake by the person quoting the text but are instead a faithful reproduction of the original.

Applications:
1. Legal Documents: In legal contexts, "sic" is used to ensure that the exact wording of a document is preserved, even if it contains errors.
2. Historical Texts: Historians use "sic" to reproduce historical documents accurately, preserving the original language and any errors that might provide insight into the time period.
3. Scholarly Works: Scholars use "sic" in their research to show that they are presenting a source as it was written, without altering the text to correct perceived mistakes.

Selection Criteria:
When deciding to use "sic mos," consider the following:
1. Accuracy: Ensure that the quoted text is an exact match to the original.
2. Clarity: Use "sic" to clarify that any errors are not your own but are present in the source material.
3. Context: Consider whether the error in the original text is significant enough to warrant its inclusion or if it might confuse the reader.
4. Purpose: Determine if the inclusion of the error is necessary for the understanding of the text or if it serves a specific analytical purpose.

In summary, "sic mos" is a tool used to maintain the authenticity of quoted material, ensuring that any peculiarities are attributed to the original source rather than the person quoting it. It is a critical component in maintaining the integrity of historical, legal, and scholarly texts.
Please refer to the product rule book for details.