MOSFETs

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SUD23N06-31
UMW
encapsulation:TO-252
Quantity: 150000
Ship Date: 5-9 working days
24+
2500+ $0.0586
5000+ $0.0575
7500+ $0.0565
- +
x $0.0586
Ext. Price: $146.50
MOQ: 2500
Mult: 2500
SPQ: 2500
MDE10N026RH
MagnaChip Semiconductor
20V 4V 2individualNChannel 100V 1.2nF@15V 120A TO-263 SMD mount
Quantity: 30000
Ship Date: 5-7 working days
22+
800+ $0.6148
2400+ $0.6045
4000+ $0.5892
5600+ $0.5789
- +
x $0.6148
Ext. Price: $491.84
MOQ: 800
Mult: 800
SPQ: 800
NTMFS08N2D5C
ON Semiconductor
138W(Tc) 20V 4V@ 380µA 84nC@ 10V 1individualNChannel 80V 2.7mΩ@ 68A,10V 166A 6.24nF@40V QFN SMD mount
Quantity: 602
Ship Date: 6-12 working days
10+ $4.9938
100+ $4.872
500+ $4.7908
3000+ $4.669
6000+ $4.5878
9000+ $4.5066
- +
x $4.9938
Ext. Price: $49.93
MOQ: 10
Mult: 1
FDPF045N10A
ON Semiconductor
onsemi NChannel EnhancedMOSTube PowerTrenchseries, Vds=100 V, 67 A, TO-220Fencapsulation, Through hole mounting, 3Pin
Quantity: 1010
Ship Date: 6-12 working days
10+ $2.706
100+ $2.64
500+ $2.596
1000+ $2.53
- +
x $2.706
Ext. Price: $48.70
MOQ: 18
Mult: 1
SQ4532AEY-T1_GE3
Vishay Intertechnology
3.3W 20V 2.5V@ 250µA 7.8nC@ 10V,10.2nC@ 10V 2N+2PChannel 30V 31mΩ@ 4.9A,10V,70mΩ@ 3.5A,10V 7.3A,5.3A 535pF@ 15V,528pF@ 15V SOIC-8 SMD mount
Quantity: 6388
Ship Date: 6-12 working days
10+ $0.5285
100+ $0.5157
500+ $0.5071
1000+ $0.4942
5000+ $0.4856
- +
x $0.5285
Ext. Price: $48.09
MOQ: 91
Mult: 1
FDMC7570S
ON Semiconductor
2.3W(Ta),59W(Tc) 20V 3V@1mA 68nC@ 10V 1individualNChannel 25V 2mΩ@ 27A,10V 27A,40A 4.41nF@13V PQFN-8 SMD mount 3.3mm*3.3mm*800μm
Quantity: 6000
Ship Date: 3-5 working days
22+
10+ $0.5343
100+ $0.5257
500+ $0.5129
1000+ $0.5043
- +
x $0.5343
Ext. Price: $5.34
MOQ: 10
Mult: 1
FDMS003N08C
ON Semiconductor
2.7W(Ta),125W(Tc) 20V 4V@ 310µA 73nC@ 10 V 1individualNChannel 80V 3.1mΩ@ 56A,10V 22A,147A 5.35nF@40V SMD mount
Quantity: 2000
Ship Date: 3-5 working days
21+
1+ $3.7596
10+ $3.6994
100+ $3.6092
500+ $3.5491
- +
x $3.7596
Ext. Price: $3.75
MOQ: 1
Mult: 1
AOTF12N50
isc
MOSFET Single tube
Quantity: 1000
Ship Date: 5-15 working days
20+
1000+ $0.802
3000+ $0.7887
5000+ $0.7686
- +
x $0.802
Ext. Price: $802.00
MOQ: 1000
Mult: 1000
SPQ: 1000
NVMFS5C628NWFT1G
ON Semiconductor
3.7W(Ta),110W(Tc) 20V 4V@ 135µA 34nC@ 10 V 1individualNChannel 60V 3mΩ@ 27A,10V 2.63nF@30V SO SMD mount
Quantity: 4365
Ship Date: 6-12 working days
10+ $1.6728
100+ $1.632
500+ $1.6048
- +
x $1.6728
Ext. Price: $48.51
MOQ: 29
Mult: 1
NTD6416ANT4G
ON Semiconductor
71W(Tc) 20V 4V@ 250µA 20nC@ 10 V 1individualNChannel 100V 81mΩ@ 17A,10V 17A 620pF@25V TO-252 SMD mount
Quantity: 4485
Ship Date: 6-12 working days
10+ $0.6089
100+ $0.594
500+ $0.5841
2500+ $0.5693
7500+ $0.5594
20000+ $0.5495
37500+ $0.5445
- +
x $0.6089
Ext. Price: $48.71
MOQ: 80
Mult: 5
IRF4104SPBF
VBsemi
N—ChannelChannel,40V,100A,RDS(ON),5mΩ@10V,6mΩ@4.5V,20Vgs(±V);1.8Vth(V) encapsulation:TO263
Quantity: 100
In Stock
23+
5+ $0.2243
- +
x $0.2243
Ext. Price: $1.12
MOQ: 5
Mult: 1
SPQ: 800
FDD5N50NZTM
VBsemi
N—ChannelChannel,650V,5A,RDS(ON),950mΩ@10V,30Vgs(±V);3.5Vth(V);TO252
Quantity: 70
In Stock
23+
5+ $0.2691
- +
x $0.2691
Ext. Price: $1.34
MOQ: 5
Mult: 1
SPQ: 2500
ISL9N306AS3S
VBsemi
NChannel 30V 98A 3.8mΩ@10V TO-263
Quantity: 100
In Stock
23+
5+ $0.2243
- +
x $0.2243
Ext. Price: $1.12
MOQ: 5
Mult: 1
SPQ: 800
IPD60R950C6
VBsemi
N—ChannelChannel,650V,5A,RDS(ON),950mΩ@10V,30Vgs(±V);3.5Vth(V);TO252
Quantity: 45
In Stock
23+
5+ $0.2691
- +
x $0.2691
Ext. Price: $1.34
MOQ: 5
Mult: 1
SPQ: 2500
PHB32N06
VBsemi
NChannel 60V 50A 23mΩ@10V TO263
Quantity: 100
In Stock
23+
5+ $0.2093
- +
x $0.2093
Ext. Price: $1.04
MOQ: 5
Mult: 1
SPQ: 800
VBZ2300
VBsemi
,。 20V,6A,RDS(ON),24mΩ@4.5V,33mΩ@2.5V,8Vgs(±V);0.45~1Vth(V) encapsulation:SOT23-3 N ,。、--。
Quantity: 1148
In Stock
23+
5+ $0.0179
- +
x $0.0179
Ext. Price: $0.08
MOQ: 5
Mult: 1
SPQ: 3000
UT8205AG-AG6
VBsemi
N+NChannel 20V 6A 24mΩ@4.5V TSOP-6
Quantity: 200
In Stock
23+
5+ $0.0373
- +
x $0.0373
Ext. Price: $0.18
MOQ: 5
Mult: 1
SPQ: 3000
TM2314FN
VBsemi
N—ChannelChannel,60V,4A,RDS(ON),85mΩ@10V,96mΩ@4.5V,20Vgs(±V);1~3Vth(V) encapsulation:SOT23-3
Quantity: 200
In Stock
23+
5+ $0.0599
- +
x $0.0599
Ext. Price: $0.29
MOQ: 5
Mult: 1
SPQ: 3000
IRLML2246TRPBF
VBsemi
P—ChannelChannel,-20V,-4A,RDS(ON),57mΩ@4.5V,83mΩ@2.5V,12Vgs(±V);-0.81Vth(V) encapsulation:SOT23-3
Quantity: 177
In Stock
23+
5+ $0.0179
- +
x $0.0179
Ext. Price: $0.08
MOQ: 5
Mult: 1
SPQ: 3000
AM4492N
VBsemi
NChannel 100V 6.4A 40mΩ@10V SO-8
Quantity: 90
In Stock
23+
5+ $0.1644
- +
x $0.1644
Ext. Price: $0.82
MOQ: 5
Mult: 1
SPQ: 4000
2SJ168
VBsemi
PChannel -60V -0.5A 3Ω@-10V SOT23-3
Quantity: 398
In Stock
23+
5+ $0.0179
- +
x $0.0179
Ext. Price: $0.08
MOQ: 5
Mult: 1
SPQ: 3000
DMN3030LSS-13
VBsemi
N—ChannelChannel,20V,11A,RDS(ON),11mΩ@4.5V,17mΩ@2.5V,15Vgs(±V);2.1Vth(V) encapsulation:SOP8
Quantity: 98
In Stock
23+
5+ $0.0896
- +
x $0.0896
Ext. Price: $0.44
MOQ: 5
Mult: 1
SPQ: 4000
SI4947DY
VBsemi
P+PChannel -30V -7.3A 29mΩ@-10V SO-8
Quantity: 100
In Stock
23+
5+ $0.1048
- +
x $0.1048
Ext. Price: $0.52
MOQ: 5
Mult: 1
SPQ: 4000
DMN4027SSD
VBsemi
N—ChannelChannel,60V,6A,RDS(ON),27mΩ@10V,32mΩ@4.5V,20Vgs(±V);1.5Vth(V) encapsulation:SOP8
Quantity: 100
In Stock
23+
5+ $0.1644
- +
x $0.1644
Ext. Price: $0.82
MOQ: 5
Mult: 1
SPQ: 4000
CEG8205
VBsemi
N+NChannel 25V 6.6A 22mΩ@4.5V TSSOP-8
Quantity: 100
In Stock
23+
5+ $0.0748
- +
x $0.0748
Ext. Price: $0.37
MOQ: 5
Mult: 1
SPQ: 3000

MOSFETs

MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor. It is a type of transistor used for amplifying or switching electronic signals and electrical power. Here's a concise introduction in English:

Definition:
A MOSFET is a voltage-controlled device that uses a gate voltage to control the flow of current between its source and drain terminals. It consists of a metal gate electrode, an oxide insulator, and a semiconductor channel, typically made of silicon.

Function:
The primary function of a MOSFET is to act as a switch or an amplifier. When a voltage is applied to the gate, it creates an electric field that either allows or inhibits current flow between the source and drain. This makes MOSFETs ideal for digital and analog circuits, where precise control over current is required.

Applications:
MOSFETs are widely used in various electronic devices due to their versatility and efficiency. Some common applications include:
1. Power electronics for motor control and power supply regulation.
2. Digital electronics for logic gates and memory circuits.
3. Analog circuits for signal amplification and processing.
4. Automotive electronics for engine management and safety systems.

Selection Criteria:
When selecting a MOSFET, consider the following criteria:
1. Voltage Rating: Ensure the MOSFET can handle the maximum voltage of the circuit.
2. Current Rating: Choose a MOSFET that can handle the expected current load.
3. Power Dissipation: Consider the heat generated and ensure the MOSFET can dissipate it effectively.
4. Switching Speed: For high-speed applications, select a MOSFET with fast switching characteristics.
5. Gate Threshold Voltage: This determines the minimum voltage required to turn the MOSFET on.
6. Package Type: Choose a package that suits the physical constraints of the application.
7. Cost: Balance performance with cost, considering the budget and availability.

In summary, MOSFETs are essential components in modern electronics, offering precise control over current flow and enabling a wide range of applications from simple switches to complex integrated circuits.
Please refer to the product rule book for details.