Bipolar Transistors (BJT)

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BF822
isc
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3000+ $0.0269
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2SC5810(T2LXG,ZF)
TOSHIBA
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2SC2881-Y(TE12L,ZC)
TOSHIBA
1W 5V 120V 120V 800mA
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KGF40N120KDA-U/H
KEC
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SN75469DE4
Texas Instruments
1.6V@ 500µA,350mA 7 NPN Darlington 100V 500mA SOP-16 SMD mount 9.9mm*3.91mm*1.58mm
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ULN2004ANE4
Texas Instruments
30V 50V 500mA DIP Through hole mounting 19.3mm*6.35mm*4.57mm
Quantity: 591
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ZHB6718TA
DIODES
DiodesZetex NPN/PNPTransistors, SMencapsulation, SMD mount, Maximum DC collector current2.5 A, maximum collector-emission voltage20 V
Quantity: 934
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ZXTN4004KQTC
DIODES
250mV@ 5mA,100mA NPN 3.8W 500nA 150V 1A TO-252-3 SMD mount 6.58mm*6.1mm*2.29mm
Quantity: 5000
In Stock
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2SC5200
isc
0.4V @IC = 8 A,IB = 0.8 A 1NPN 150W 5V 230V 40V 15A TO-3PL
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2SC2713-GR(TE85L,F)
TOSHIBA
Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
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2SC1172
isc
Silicon NPN Power Transistor
Quantity: 1000
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BCX54
TWGMC
500mV@ 0.5A,50mA 1NPN 500mW 5V 100nA 45V 45V 1A SOT-89
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In Stock
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PZTA92
isc
PNP SOT-223
Quantity: 3000
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BC807-25 RFG
Taiwan Semiconductor
700mV@ 50mA,500mA PNP 300mW 5V 200nA 50V 45V 500mA SOT-23 SMD mount
Quantity: 3000
Ship Date: 7-12 working days
3000+ $0.0458
6000+ $0.041
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Ext. Price: $137.40
MOQ: 3000
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BC848AW RFG
Taiwan Semiconductor
600mV@ 5mA,100mA NPN 200mW 5V 100nA 30V 30V 100mA SOT-323 SMD mount
Quantity: 15000
Ship Date: 7-12 working days
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2SA1015
HXY MOSFET
: SOT-23encapsulationPNP,50VVCEOand0.15Acollector_current,130TO400,、,。
Quantity: 360000
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PZT3904
SHIKUES
0.3V @IC=50mA,IB=5mA NPN 50nA 40V 200mA SOT-223
Quantity: 92500
In Stock
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MJD42CQ
YANGJIE
-1.5V@Ic=-6mA,Ib=-0.6mA -100V 6A TO-252
Quantity: 15000
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2SA1037-S
YANGJIE
-0.5V@Ic=-50mA,Ib=-5mA -50V 200mA SOT-23
Quantity: 186000
Ship Date: 3-4 weeks
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3000+ $0.0081
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2SA1036KFRAT146
ROHM
200mW 5V 40V 32V 500mA
Quantity: 2441
Ship Date: 14-16 working days
95+ $0.1645
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2N5088
isc
Quantity: 1000
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1000+ $0.0202
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Ext. Price: $20.20
MOQ: 1000
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SPQ: 1000
2SC4541U
CBI
NPN
Quantity: 112000
Ship Date: 3-7 working days
1000+ $0.0266
2000+ $0.0262
3000+ $0.0255
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Ext. Price: $26.60
MOQ: 1000
Mult: 1000
SPQ: 1000
2N3906S-RTK/PS
HXY MOSFET
-0.25V @IC=-10mA,IB=-1mA PNP -5V 100nA -40V 40V 200mA 1.4mm(width)*1.15mm(height)
Quantity: 360000
Ship Date: 5-7 working days
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3000+ $0.0035
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435000+ $0.003
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MOQ: 3000
Mult: 3000
SPQ: 3000
BD680AS
ON Semiconductor
2.8V@ 40mA,2A PNP - Darlington 14W 5V 500μA 80V 80V 4A TO-126-3 Through hole mounting 8mm*3.25mm*11mm
Quantity: 930
Ship Date: 10-15 working days
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Ext. Price: $281.91
MOQ: 481
Mult: 1
TIP42CTU-F129
ON Semiconductor
PNP EPITAXIAL SILICON TRANSISTOR
Quantity: 15
Ship Date: 3-5 working days
21+
1000+ $0.2479
5000+ $0.2397
10000+ $0.2276
20000+ $0.2235
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x $0.2479
Ext. Price: $247.90
MOQ: 1000
Mult: 1000
SPQ: 1000

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.