Bipolar Transistors (BJT)

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FJV92MTF
ON Semiconductor
500mV@ 2mA,20mA PNP 250nA 350V 500mA SOT-23-3 SMD mount 2.9mm*1.3mm*940μm
Quantity: 5781
Ship Date: 10-18 working days
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2SC3399
ON Semiconductor
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1+ $0.0401
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MPS751ZL1
ON Semiconductor
PNP 625mW 5V 100nA 80V 60V 2A TO-226,TO-92 Through hole mounting 5.2mm*4.19mm*5.33mm
Quantity: 52433
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1+ $0.0902
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BUH100G
ON Semiconductor
NPN 100W 10V 100μA 700V 400V 10A TO-220-3 Through hole mounting 10.28mm*4.82mm*9.28mm
Quantity: 22637
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FJP3305H2TU
ON Semiconductor
onsemi NPNTransistors, TO-220encapsulation, Through hole mounting, Maximum DC collector current4 A, maximum collector-emission voltage400 V
Quantity: 9661
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MMBT2369LT3G
ON Semiconductor
250mV@ 1mA,10mA NPN 225mW 4.5V 400nA 40V 15V 200mA SOT-23-3,TO-236 SMD mount 2.9mm*1.3mm*940μm
Quantity: 231277
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PMBT4403YSX
NXP Semiconductors
PNP 50nA 40V 600mA SOT-363 SMD mount
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5000+ $0.0228
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BC56-10PASX
nexperia
500mV@ 50mA,500mA NPN 1.65W 5V 100nA 100V 80V 1A DFN-2020D-3 SMD mount
Quantity: 2890
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1000+ $0.0516
5000+ $0.0512
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BC856T,115
NXP Semiconductors
PNP 250mW 5V 15nA 80V 65V 100mA SC-75 SMD mount
Quantity: 49786
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5000+ $0.0185
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TIP112
isc
NPN 50W 5V 2mA 100V 100V 2A TO-220
Quantity: 1000
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MOQ: 1000
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PDTC123YM,315
NXP Semiconductors
NPN - Pre-Biased 1μA 50V 100mA DFN-1006-3 SMD mount
Quantity: 14936
Ship Date: 9-13 working days
10+
5000+ $0.0206
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2SC3255
isc
Silicon NPN Power Transistor
Quantity: 13000
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1000+ $0.8034
3000+ $0.7899
5000+ $0.7698
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MOQ: 1000
Mult: 1000
SPQ: 1000
2SC3175
isc
Silicon NPN Power Transistor
Quantity: 6000
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1000+ $0.8034
3000+ $0.7899
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MOQ: 1000
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SPQ: 1000
2SD1071
isc
Silicon NPN Darlington Power Transistor
Quantity: 10000
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1000+ $0.6695
3000+ $0.6583
5000+ $0.6416
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Ext. Price: $669.50
MOQ: 1000
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SPQ: 1000
2SD1662
isc
BJT
Quantity: 3500
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600+ $2.41
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Ext. Price: $1446.00
MOQ: 600
Mult: 600
SPQ: 600
2SD1133
isc
Silicon NPN Power Transistor
Quantity: 8000
Ship Date: 3-10 working days
20+
1000+ $0.6695
3000+ $0.6583
5000+ $0.6416
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Ext. Price: $669.50
MOQ: 1000
Mult: 1000
SPQ: 1000
PUMH1,115
nexperia
Nexperia NPNdigital transistor, SOTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
Quantity: 30000
In Stock
23+
3000+ $0.0237
6000+ $0.0234
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Ext. Price: $71.09
MOQ: 3000
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2SA1576ART1G
ON Semiconductor
PNP 200mW 7V 100nA 60V 50V 100mA SOT SMD mount 3.56mm*4.32mm*2.13mm
Quantity: 127202
Ship Date: 10-18 working days
04+
1+ $0.0231
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Ext. Price: $126.17
MOQ: 5462
Mult: 1
SPQ: 1
FJX4006RTF
ON Semiconductor
300mV@ 500µA,10mA PNP - Pre-Biased 200mW -10V 100nA 50V 100mA SOT-323 SMD mount 2mm*1.25mm*900μm
Quantity: 89568
Ship Date: 10-18 working days
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1+ $0.0301
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Ext. Price: $126.32
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SJ83180
ON Semiconductor
Quantity: 1132
Ship Date: 10-18 working days
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Ext. Price: $126.40
MOQ: 63
Mult: 1
SPQ: 1
RN2101ACT(TPL3)
TOSHIBA
PNP - Pre-Biased 500nA 50V 80mA CST-3 SMD mount
Quantity: 19273
Ship Date: 9-13 working days
14+
1000+ $0.0717
5000+ $0.071
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Ext. Price: $120.02
MOQ: 1674
Mult: 1
SPQ: 1
BCW65ALT1
ON Semiconductor
NPN 20nA 32V 800mA SOT-23-3,TO-236 SMD mount
Quantity: 2890
Ship Date: 10-18 working days
04+
1+ $0.0231
- +
x $0.0231
Ext. Price: $126.17
MOQ: 5462
Mult: 1
SPQ: 1
BCP69-16
Infineon Technologies
3W 5V 25V 20V 1A SOT-223 SMD mount
Quantity: 2409
Ship Date: 9-13 working days
01+
1000+ $0.0474
5000+ $0.0469
- +
x $0.0474
Ext. Price: $120.01
MOQ: 2532
Mult: 1
SPQ: 1
2SA2099
ON Semiconductor
PNP 2W 5V 10μA 60V 50V 10A TO-220ML Through hole mounting
Quantity: 106
Ship Date: 10-18 working days
11+
1+ $0.6112
- +
x $0.6112
Ext. Price: $126.51
MOQ: 207
Mult: 1
SPQ: 1
BC807-40W,115
NXP Semiconductors
PNP 290mW 45V SOT-323 SMD mount 1.35mm(width)
Quantity: 2890
Ship Date: 9-13 working days
14+
5000+ $0.0185
- +
x $0.0185
Ext. Price: $120.00
MOQ: 6487
Mult: 1
SPQ: 1

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.