SiC MOSFETs

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SiC MOSFETs Results:
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IMBG120R350M1HXTMA1
Infineon Technologies
5.9nC@ 18 V 65W(Tc) 196pF@800V 468mΩ@ 2A,18V 4.7A 1.2KV 5.7V@1mA 18V 1individualNChannel TO-263-7 SMD mount
Quantity: 657
Ship Date: 10-15 working days
1+ $5.6597
10+ $5.123
100+ $4.7813
250+ $4.2366
500+ $3.9695
- +
x $5.6597
Ext. Price: $79.23
MOQ: 14
Mult: 1
GCMX020A120B2B1P
SEMIQ
241nC@ 20V 6.5nF@800V 385W(Tc) 28mΩ@ 50A,20V 1.2KV 4V@20mA base mount
Quantity: 7
Ship Date: 7-12 working days
1+ $61.7344
10+ $47.1536
100+ $45.773
- +
x $61.7344
Ext. Price: $61.73
MOQ: 1
Mult: 1
SPQ: 1
UJ4C075060B7S
ON Semiconductor
Quantity: 388
Ship Date: 14-16 working days
2+ $16.1388
100+ $11.0052
500+ $8.9821
- +
x $16.1388
Ext. Price: $32.27
MOQ: 2
Mult: 1
AOM060V65X2
Alpha & Omega Semiconductor
39.4nC@ 15 V 103W(Tc) 1.165nF@400V 80mΩ@ 6A,15V 650V 3.5V@6mA 1individualNChannel TO-247-4L Through hole mounting
Quantity: 240
Ship Date: 7-12 working days
1+ $7.5168
10+ $4.8859
240+ $3.2167
720+ $2.964
- +
x $7.5168
Ext. Price: $7.51
MOQ: 1
Mult: 1
SPQ: 1
AIMBG75R060M1HXTMA1
Infineon Technologies
34A 750V 1individualNChannel SMD mount
Quantity: 2000
Ship Date: 7-12 working days
1000+ $3.9539
- +
x $3.9539
Ext. Price: $3953.90
MOQ: 1000
Mult: 1000
SPQ: 1
NVXR22S90M2SPC
ON Semiconductor
1.8μC@ 18V 35nF@400V 900W (Tj) 2.7mΩ@ 510A,18V 900V 4.3V@150mA SSDC-39 base mount
Quantity: 7
Ship Date: 7-12 working days
1+ $1324.752
- +
x $1324.752
Ext. Price: $1324.75
MOQ: 1
Mult: 1
SPQ: 1
IMBG120R026M2HXTMA1
Infineon Technologies
75A 1.2KV 1individualNChannel SMD mount
Quantity: 477
Ship Date: 3-12 working days
1+ $11.8601
5+ $11.3857
10+ $10.4369
50+ $10.4369
100+ $10.2471
250+ $10.2471
- +
x $11.8601
Ext. Price: $35.58
MOQ: 3
Mult: 1
SICW080N120Y4-BP
HXY MOSFET
ID:32A,VDSS:1200V,RDON:75mR,TYPE:NChannel,
Quantity: 360000
Ship Date: 5-7 working days
24+
30+ $6.7284
60+ $6.6162
90+ $6.4481
240+ $5.8873
- +
x $6.7284
Ext. Price: $201.85
MOQ: 30
Mult: 30
SPQ: 30
SCT4036KEHRC11
ROHM
ROHM NChannelMOSTube, Vds=1200 V, 43 A, TO-247Nencapsulation, Through hole mounting
Quantity: 429
Ship Date: 7-13 working days
10+ $15.6021
25+ $14.2177
50+ $13.9327
100+ $12.7973
- +
x $15.6021
Ext. Price: $156.02
MOQ: 10
Mult: 1
IMZ120R090M1HXKSA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube IMZ1series, Vds=1200 V, 26 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Quantity: 593
Ship Date: 7-13 working days
30+ $5.8271
150+ $5.3536
- +
x $5.8271
Ext. Price: $174.81
MOQ: 30
Mult: 30
MSC035SMA170B
Microchip Technology
Microchip NChannelMOSTube, Vds=1700 V, 48 A, TO-247encapsulation, Through hole mounting
Quantity: 163
Ship Date: 7-13 working days
30+ $35.3542
120+ $34.647
600+ $33.9542
- +
x $35.3542
Ext. Price: $1060.62
MOQ: 30
Mult: 30
IMZ120R350M1HXKSA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube IMZ1series, Vds=1200 V, 4.7 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Quantity: 182
Ship Date: 7-13 working days
30+ $3.6315
60+ $3.5589
120+ $3.2698
- +
x $3.6315
Ext. Price: $108.94
MOQ: 30
Mult: 30
NTHL015N065SC1
ON Semiconductor
onsemi NChannelMOSTube, Vds=650 V, 163 A, TO247-3Lencapsulation, Through hole mounting
Quantity: 498
Ship Date: 7-13 working days
450+ $23.0722
900+ $22.6107
1350+ $22.1585
- +
x $23.0722
Ext. Price: $10382.49
MOQ: 450
Mult: 450
SCT3080ARC15
ROHM
ROHM NChannel EnhancedMOSTube, Vds=650 V, 30 A, TO-247-4Lencapsulation, Through hole mounting, 4Pin
Quantity: 413
Ship Date: 7-13 working days
10+ $8.795
25+ $8.4425
50+ $7.7615
100+ $6.8187
- +
x $8.795
Ext. Price: $87.95
MOQ: 10
Mult: 1
IMBG65R022M1HXTMA1
Infineon Technologies
Infineon NChannelMOSTube, Vds=650 V, 64 A, TO-263-7encapsulation, surface mount, 7Pin
Quantity: 802
Ship Date: 3-12 working days
1+ $13.4979
5+ $12.958
10+ $11.8782
50+ $11.8782
100+ $11.6622
250+ $11.6622
- +
x $13.4979
Ext. Price: $40.49
MOQ: 3
Mult: 1
C3M0120065D
CREE
Quantity: 1800
Ship Date: 5-7 working days
1+ $6.1652
100+ $6.0172
2000+ $5.8199
8000+ $5.7213
- +
x $6.1652
Ext. Price: $6.16
MOQ: 1
Mult: 1
NTBG015N065SC1
ON Semiconductor
onsemi NChannelMOSTube SiC Powerseries, Vds=650 V, 145 A, D2PAK (TO-263)encapsulation, surface mount, 7Pin
Quantity: 800
Ship Date: 6-13 working days
800+ $22.7963
2400+ $22.6139
8000+ $22.4315
- +
x $22.7963
Ext. Price: $18237.04
MOQ: 800
Mult: 800
SPQ: 800
NTHL160N120SC1
ON Semiconductor
onsemi NChannel EnhancedMOSFETTube NTHseries, Vds=1200 V, 29 A, TO-247encapsulation, Through hole mounting, 3Pin
Quantity: 3600
Ship Date: 3-5 working days
21+
450+ $5.7276
900+ $5.6322
1800+ $5.5367
3600+ $5.4413
- +
x $5.7276
Ext. Price: $2577.42
MOQ: 450
Mult: 450
SPQ: 450
IMBG120R090M1HXTMA1
Infineon Technologies
23nC@ 18 V 136W(Tc) 763pF@800V 125mΩ@ 8.5A,18V 26A 1.2KV 5.7V@3.7mA 1individualNChannel TO-263 SMD mount
Quantity: 2851
Ship Date: 3-12 working days
1+ $9.2211
10+ $8.1146
100+ $7.967
500+ $7.967
- +
x $9.2211
Ext. Price: $36.88
MOQ: 4
Mult: 1
MSC360SMA120B
Microchip Technology
21nC@ 20 V 78W(Tc) 255pF@1000V 450mΩ@ 5A,20V 1.2KV 3.14V@ 500µA (Typ) 1individualNChannel TO-247-3 Through hole mounting
Quantity: 27
Ship Date: 13-17 working days
1+ $6.959
25+ $6.416
100+ $5.585
- +
x $6.959
Ext. Price: $160.05
MOQ: 23
Mult: 1
SPQ: 1
MSC750SMA170S
Microchip Technology
100μA 11nC@ 20V 63W 184pF@ 1000V 940mΩ@ 20V 6A 1.7KV 23V D3PAK SMD mount
Quantity: 75
Ship Date: 6-13 working days
1+ $7.1185
30+ $6.1668
120+ $5.208
- +
x $7.1185
Ext. Price: $7.11
MOQ: 1
Mult: 1
SPQ: 1
MSCSM70DUM025AG
Microchip Technology
1.29μC@ 20V 27nF@700V 1.882KW(Tc) 3.2mΩ@ 240A,20V 689mA 700V 2.4V@24mA 2individualNChannel base mount
Quantity: 5
Ship Date: 13-17 working days
1+ $493.4706
- +
x $493.4706
Ext. Price: $493.47
MOQ: 1
Mult: 1
SPQ: 1
MSCSM120DUM16T3AG
Microchip Technology
464nC@ 20V 6.04nF@1000V 745W(Tc) 16mΩ@ 80A,20V 173A 1.2KV 2.8V@2mA 2individualNChannel SP-3F base mount
Quantity: 4
Ship Date: 13-17 working days
1+ $177.6991
- +
x $177.6991
Ext. Price: $177.69
MOQ: 1
Mult: 1
SPQ: 1
IMDQ75R008M1HXUMA1
Infineon Technologies
173A 750V 1individualNChannel SMD mount
Quantity: 758
Ship Date: 10-15 working days
24+
750+ $20.8368
- +
x $20.8368
Ext. Price: $15627.60
MOQ: 750
Mult: 750
SPQ: 750
G3R160MT12D
GeneSiC Semiconductor
28nC@ 15 V 123W(Tc) 730pF@800V 192mΩ@ 10A,15V 22A 1.2KV 2.69V@5mA 18V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 1425
Ship Date: 7-12 working days
1+ $7.0416
10+ $6.084
25+ $5.824
100+ $5.4496
250+ $5.2208
500+ $5.044
1000+ $4.888
- +
x $7.0416
Ext. Price: $7.04
MOQ: 1
Mult: 1
SPQ: 1

SiC MOSFETs

Sic mos is a Latin phrase that translates to "just as it is" or "thus and so." It is often used in legal documents, historical texts, and scholarly works to indicate that a quoted text is being reproduced exactly as it appears in the original source, including any errors or peculiarities.

Definition:
"Sic" is a Latin term used to acknowledge a mistake or unusual usage in a quoted text, indicating that the error is not the fault of the person quoting but is present in the original source.

Function:
The primary function of "sic mos" is to maintain the integrity of the original text. It serves as a disclaimer, informing the reader that any errors, archaic spellings, or unusual phrasings are not the result of a mistake by the person quoting the text but are instead a faithful reproduction of the original.

Applications:
1. Legal Documents: In legal contexts, "sic" is used to ensure that the exact wording of a document is preserved, even if it contains errors.
2. Historical Texts: Historians use "sic" to reproduce historical documents accurately, preserving the original language and any errors that might provide insight into the time period.
3. Scholarly Works: Scholars use "sic" in their research to show that they are presenting a source as it was written, without altering the text to correct perceived mistakes.

Selection Criteria:
When deciding to use "sic mos," consider the following:
1. Accuracy: Ensure that the quoted text is an exact match to the original.
2. Clarity: Use "sic" to clarify that any errors are not your own but are present in the source material.
3. Context: Consider whether the error in the original text is significant enough to warrant its inclusion or if it might confuse the reader.
4. Purpose: Determine if the inclusion of the error is necessary for the understanding of the text or if it serves a specific analytical purpose.

In summary, "sic mos" is a tool used to maintain the authenticity of quoted material, ensuring that any peculiarities are attributed to the original source rather than the person quoting it. It is a critical component in maintaining the integrity of historical, legal, and scholarly texts.
Please refer to the product rule book for details.