SiC MOSFETs

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SiC MOSFETs Results:
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SCT4065DR-VB
VBsemi
,。TO247-4L;NChannel,650V,40A,RDS(ON)=50mΩ@VGS=18V,VGS= -10~22V,Vth=2~5V。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.3004
30+ $2.2627
50+ $2.225
1000+ $2.1684
- +
x $2.3004
Ext. Price: $2.30
MOQ: 1
Mult: 1
SPQ: 300
GP2T080A120U-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
SCT2080KE-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
UF4C120053K4S-VB
VBsemi
,。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
SCT3080KLHR-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
SCH2080KEC-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
DMWSH120H43SM3-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
MXP120A045SW-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
S2M0040120D-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300
IMLT65R060M2HXTMA1
Infineon Technologies
40A 650V 1individualNChannel SMD mount
Quantity: 3600
Ship Date: 8-17 working days
1800+ $2.6335
- +
x $2.6335
Ext. Price: $4740.30
MOQ: 1800
Mult: 1800
SPQ: 1800
AIMDQ75R016M1HXUMA1
Infineon Technologies
80nC@ 18 V 384W(Tc) 2.869nF@500V 750V 22mΩ@ 41.5A,18V 98A 750V 5.6V@14.9mA 1individualNChannel SMD mount
Quantity: 223
Ship Date: 3-12 working days
1+ $18.4364
5+ $16.519
10+ $16.2241
50+ $15.9291
100+ $15.9291
250+ $15.9291
- +
x $18.4364
Ext. Price: $36.87
MOQ: 2
Mult: 1
AIMZA75R040M1HXKSA1
Infineon Technologies
34nC@ 18 V 185W(Tc) 1.135nF@500V 37mΩ@ 16.6A,20V 47A 750V 5.6V@6mA 1individualNChannel Through hole mounting
Quantity: 162
Ship Date: 3-12 working days
1+ $8.216
5+ $8.216
10+ $7.3616
50+ $7.2301
100+ $7.0987
250+ $7.0987
- +
x $8.216
Ext. Price: $32.86
MOQ: 4
Mult: 1
IMBG120R181M2HXTMA1
Infineon Technologies
9.7nC@ 18 V 94W(Tc) 350pF@800V 181.4mΩ@ 3.9A,18V 14.9A 1.2KV 5.1V@1.2mA 1individualNChannel SMD mount
Quantity: 391
Ship Date: 3-12 working days
1+ $3.1657
10+ $2.8364
100+ $2.7858
500+ $2.7351
1000+ $2.7351
- +
x $3.1657
Ext. Price: $28.49
MOQ: 9
Mult: 1
IMWH170R650M1XKSA1
Infineon Technologies
7.5A 1.7KV 1individualNChannel Through hole mounting
Quantity: 272
Ship Date: 3-12 working days
1+ $4.3656
10+ $3.9115
100+ $3.7718
500+ $3.7718
1000+ $3.7718
- +
x $4.3656
Ext. Price: $30.55
MOQ: 7
Mult: 1
SCTW60N120G2
STMicroelectronics
STMicroelectronics NChannelMOSTube, Vds=1200 V, 60 A, HiP247encapsulation, Through hole mounting, 3Pin
Quantity: 34
Ship Date: 3-12 working days
1+ $19.388
5+ $18.0955
10+ $17.7723
50+ $17.4492
100+ $17.4492
250+ $17.4492
- +
x $19.388
Ext. Price: $38.77
MOQ: 2
Mult: 1
IMBG120R234M2HXTMA1
Infineon Technologies
8.1A 1.2KV 1individualNChannel SMD mount
Quantity: 276
Ship Date: 3-12 working days
1+ $2.9372
10+ $2.5305
100+ $2.4853
500+ $2.4401
1000+ $2.4401
- +
x $2.9372
Ext. Price: $35.24
MOQ: 12
Mult: 1
IMBG40R036M2HXTMA1
Infineon Technologies
26nC@ 18 V 3.8W(Ta),167W(Tc) 1.17nF@200V 45.7mΩ@ 11.1A,18V 400V 5.6V@4mA 1individualNChannel SMD mount
Quantity: 970
Ship Date: 3-12 working days
1+ $5.2877
10+ $4.6531
100+ $4.5685
500+ $4.5685
1000+ $4.5685
- +
x $5.2877
Ext. Price: $31.72
MOQ: 6
Mult: 1
G3R60MT07D
GeneSiC Semiconductor
750V TO-247-3 Through hole mounting
Quantity: 172
Ship Date: 3-12 working days
1+ $10.8286
5+ $10.3954
10+ $9.5291
50+ $9.5291
100+ $9.3559
250+ $9.3559
- +
x $10.8286
Ext. Price: $32.48
MOQ: 3
Mult: 1
G3R30MT12J
isc
Quantity: 800
Ship Date: 3-6 weeks
20+
800+ $15.8789
2400+ $15.2173
4000+ $13.8941
- +
x $15.8789
Ext. Price: $12703.12
MOQ: 800
Mult: 800
SPQ: 800
NTBG040N120M3S
ON Semiconductor
75nC@ 18 V 263W(Tc) 1.7nF@800V 54mΩ@ 20A,18V 1.2KV 4.4V@10mA 22V 1individualNChannel D2PAK-7 SMD mount
Quantity: 800
Ship Date: 8-10 working days
800+ $5.1807
1600+ $4.9259
3200+ $4.756
6400+ $4.6711
- +
x $5.1807
Ext. Price: $4144.56
MOQ: 800
Mult: 800
SPQ: 800
SCTW90N65G2V
STMicroelectronics
STMicroelectronics NChannel EnhancedMOSTube SCTW90series, Vds=650 V, 119 A, HiP247encapsulation, Through hole mounting, 3Pin
Quantity: 398
Ship Date: 3-12 working days
1+ $28.4051
5+ $28.4051
10+ $27.8979
50+ $27.3906
100+ $27.3906
- +
x $28.4051
Ext. Price: $28.40
MOQ: 1
Mult: 1
IMZA75R060M1HXKSA1
Infineon Technologies
23nC@ 18 V 144W(Tc) 779pF@500V 55mΩ@ 11.1A,20V 32A 750V 5.6V@4mA 1individualNChannel Through hole mounting
Quantity: 159
Ship Date: 3-12 working days
1+ $6.5284
5+ $6.2773
10+ $5.6245
50+ $5.524
100+ $5.524
250+ $5.524
- +
x $6.5284
Ext. Price: $32.64
MOQ: 5
Mult: 1
SCT3105KR-VB
VBsemi
,。TO247-4L;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
MXP120A080FW-GE3-VB
VBsemi
,。TO247;NChannel,1200V,30A,RDS(ON)=80mΩ@VGS=18V,VGS= -10~22V,Vth=2.5~4.5V;,、。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $2.8755
30+ $2.8283
50+ $2.7812
1000+ $2.7105
- +
x $2.8755
Ext. Price: $2.87
MOQ: 1
Mult: 1
SPQ: 300
APT80SM120B-VB
VBsemi
,。TO247;NChannel,1200V;60A;RDS(ON)=40mΩ@VGS=18V,VGS=-10~22V;Vth=2.5~4.5V;,,。
Quantity: 30000
Ship Date: 3-5 working days
25+
1+ $3.4505
30+ $3.394
50+ $3.3374
1000+ $3.2526
- +
x $3.4505
Ext. Price: $3.45
MOQ: 1
Mult: 1
SPQ: 300

SiC MOSFETs

Sic mos is a Latin phrase that translates to "just as it is" or "thus and so." It is often used in legal documents, historical texts, and scholarly works to indicate that a quoted text is being reproduced exactly as it appears in the original source, including any errors or peculiarities.

Definition:
"Sic" is a Latin term used to acknowledge a mistake or unusual usage in a quoted text, indicating that the error is not the fault of the person quoting but is present in the original source.

Function:
The primary function of "sic mos" is to maintain the integrity of the original text. It serves as a disclaimer, informing the reader that any errors, archaic spellings, or unusual phrasings are not the result of a mistake by the person quoting the text but are instead a faithful reproduction of the original.

Applications:
1. Legal Documents: In legal contexts, "sic" is used to ensure that the exact wording of a document is preserved, even if it contains errors.
2. Historical Texts: Historians use "sic" to reproduce historical documents accurately, preserving the original language and any errors that might provide insight into the time period.
3. Scholarly Works: Scholars use "sic" in their research to show that they are presenting a source as it was written, without altering the text to correct perceived mistakes.

Selection Criteria:
When deciding to use "sic mos," consider the following:
1. Accuracy: Ensure that the quoted text is an exact match to the original.
2. Clarity: Use "sic" to clarify that any errors are not your own but are present in the source material.
3. Context: Consider whether the error in the original text is significant enough to warrant its inclusion or if it might confuse the reader.
4. Purpose: Determine if the inclusion of the error is necessary for the understanding of the text or if it serves a specific analytical purpose.

In summary, "sic mos" is a tool used to maintain the authenticity of quoted material, ensuring that any peculiarities are attributed to the original source rather than the person quoting it. It is a critical component in maintaining the integrity of historical, legal, and scholarly texts.
Please refer to the product rule book for details.