Discrete IGBTs

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Discrete IGBTs Results:
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AIKW40N65DF5XKSA1
Infineon Technologies
Infineon IGBT, maximum 650 V, maximum 74 A
Quantity: 152
Ship Date: 7-13 working days
30+ $3.8111
60+ $3.6869
120+ $3.3873
- +
x $3.8111
Ext. Price: $114.33
MOQ: 30
Mult: 30
IXGH36N60B3
IXYS
250KW 1.5V 600V 92A TO-247AD Through hole mounting 21.46mm(height)
Quantity: 42
Ship Date: 6-13 working days
1+ $6.9115
10+ $3.839
120+ $3.0672
510+ $2.5515
- +
x $6.9115
Ext. Price: $6.91
MOQ: 1
Mult: 1
SPQ: 1
CRG60T60AN3H
CR Micro
403W 600V 60A TO-3P-3
Quantity: 10000
Ship Date: 7-12 working days
1000+ $0.8722
2000+ $0.8548
3000+ $0.8373
- +
x $0.8722
Ext. Price: $872.20
MOQ: 1000
Mult: 1000
SPQ: 1000
HGTP12N60A4D
ON Semiconductor
167W 2V Freestandingwithbuilt-indiode 600V 54A TO-220-3 Through hole mounting 9.4mm(height)
Quantity: 50
Ship Date: 10-15 working days
1+ $5.8793
- +
x $5.8793
Ext. Price: $282.20
MOQ: 48
Mult: 1
MGD623S
isc
Quantity: 600
Ship Date: 3-6 weeks
20+
600+ $2.1531
1800+ $2.0634
3000+ $1.884
- +
x $2.1531
Ext. Price: $1291.85
MOQ: 600
Mult: 600
SPQ: 600
DGW25N120CTL
YANGJIE
Quantity: 1800
Ship Date: 4-5 weeks
24+
360+ $1.4013
- +
x $1.4013
Ext. Price: $504.46
MOQ: 360
Mult: 360
SPQ: 360
DGP10N65CTL0
YANGJIE
Quantity: 4350
Ship Date: 8 weeks
24+
1000+ $0.3454
- +
x $0.3454
Ext. Price: $345.40
MOQ: 1000
Mult: 1000
SPQ: 1000
IKP39N65ES5XKSA1
Infineon Technologies
Infineon IGBT, maximum 650 V, maximum 62 A
Quantity: 485
Ship Date: 7-13 working days
50+ $2.1783
100+ $2.0911
200+ $1.9213
- +
x $2.1783
Ext. Price: $108.91
MOQ: 50
Mult: 50
IGP30N65F5XKSA1
Infineon Technologies
188W 1.6V Freestanding 650V 55A TO-220-3 Through hole mounting
Quantity: 1385
Ship Date: 7-13 working days
50+ $1.6559
100+ $1.5897
150+ $1.5579
- +
x $1.6559
Ext. Price: $82.79
MOQ: 50
Mult: 50
STGWA25M120DF3
isc
Quantity: 20000
Ship Date: 3-6 weeks
20+
1000+ $3.3642
3000+ $3.224
5000+ $2.9436
- +
x $3.3642
Ext. Price: $3364.20
MOQ: 1000
Mult: 1000
SPQ: 1000
VSKT162/12PBF
Vishay Intertechnology
Vishay Dual thyristor module, average_on_state_current160A, panel mount, INT-A-PAKencapsulation, Vrrm=1200V
Quantity: 15
Ship Date: 7-13 working days
15+ $49.5039
75+ $44.5535
- +
x $49.5039
Ext. Price: $742.55
MOQ: 15
Mult: 15
STGB30H60DFB
STMicroelectronics
260W 1.55V Freestanding 600V 60A D2PAK SMD mount 4.83mm(height)
Quantity: 999
Ship Date: 6-13 working days
1+ $4.025
1000+ $1.1445
2000+ $1.0605
- +
x $4.025
Ext. Price: $4.02
MOQ: 1
Mult: 1
SPQ: 1
IXXH80N65B4H1
IXYS
IXYS IGBT, maximum 650 V, maximum 430 A
Quantity: 6
Ship Date: 6-13 working days
1+ $15.663
10+ $9.955
120+ $8.6205
510+ $8.0535
- +
x $15.663
Ext. Price: $15.66
MOQ: 1
Mult: 1
SPQ: 1
SGP10N60RUFDTU
ON Semiconductor
75W 2.5V Freestanding 600V 16A TO-220-3 Through hole mounting 10.1mm*4.7mm*9.4mm
Quantity: 4000
Ship Date: 3-5 working days
1000+ $1.408
2000+ $1.3742
4000+ $1.3291
8000+ $1.2615
- +
x $1.408
Ext. Price: $1408.00
MOQ: 1000
Mult: 1000
SPQ: 1000
IRGSL4062DPBF
Infineon Technologies
25W 1.6V Freestanding 600V 48A TO-262 Through hole mounting 11.3mm*4.83mm*9.65mm
Quantity: 300
Ship Date: 10-15 working days
1+ $8.329
- +
x $8.329
Ext. Price: $283.18
MOQ: 34
Mult: 1
VBP16I60
VBsemi
,。 IGBT;TO-247;600V;180A;120 (TC=25C)-60 (TC=100C)VCEsat_1.8V@VGE=±30V;,,,。
Quantity: 400000
In Stock
25+
1+ $1.917
30+ $1.8856
50+ $1.8542
100+ $1.807
- +
x $1.917
Ext. Price: $1.91
MOQ: 1
Mult: 1
SPQ: 300
NGW50T60M3DF-VB
VBsemi
,。 IGBT;TO-247;600V;180A;120 (TC=25C)-60 (TC=100C)VCEsat_1.8V@VGE=±30V;,,,。
Quantity: 400000
In Stock
25+
1+ $1.917
30+ $1.8856
50+ $1.8542
100+ $1.807
- +
x $1.917
Ext. Price: $1.91
MOQ: 1
Mult: 1
SPQ: 300
VBL16I25S
VBsemi
IGBT;TO263;600V;75A;VCEsat_1.9V@VGE=30V;
Quantity: 5
In Stock
23+
5+ $1.0296
- +
x $1.0296
Ext. Price: $5.14
MOQ: 5
Mult: 1
SPQ: 1000
STB1081SL3G
ON Semiconductor
Ignition IGBT 350 V 400 mJ Avalanche Energy
Quantity: 2400
Ship Date: 10-15 working days
1+ $2.8087
- +
x $2.8087
Ext. Price: $283.67
MOQ: 101
Mult: 1
JT030N065WED
Sino-Microelectronics
Quantity: 9000
Ship Date: 7-14 working days
25+
900+ $0.5262
1800+ $0.5173
2700+ $0.5042
- +
x $0.5262
Ext. Price: $473.58
MOQ: 900
Mult: 900
SPQ: 900
RGS50TSX2DGC11
ROHM
ROHM IGBT, maximum 1200 V, maximum 50 A
Quantity: 400
Ship Date: 7-12 working days
1+ $9.5888
30+ $5.6323
120+ $4.7642
510+ $4.2991
- +
x $9.5888
Ext. Price: $9.58
MOQ: 1
Mult: 1
SPQ: 1
MG450HF12TLE3
YANGJIE
Quantity: 28
Ship Date: 6-8 weeks
24+
4+ $60.7886
- +
x $60.7886
Ext. Price: $243.15
MOQ: 4
Mult: 4
SPQ: 4
IXBT42N170
isc
Quantity: 1000
Ship Date: 5-15 working days
20+
1000+ $18.8395
3000+ $18.0545
5000+ $16.4845
- +
x $18.8395
Ext. Price: $18839.50
MOQ: 1000
Mult: 1000
SPQ: 1000
STGWA40H65DFB2
STMicroelectronics
STMicroelectronics IGBT, maximum 650 V, maximum 40 A
Quantity: 20000
Ship Date: 5-7 working days
600+ $1.3149
1200+ $1.2503
2400+ $1.2071
4800+ $1.1856
- +
x $1.3149
Ext. Price: $788.94
MOQ: 600
Mult: 600
SPQ: 600
IRGS4607DPBF
Infineon Technologies
58W 1.75V 600V 11A D2PAK SMD mount 4.83mm(height)
Quantity: 450
Ship Date: 9-13 weeks
168+ $0.8364
- +
x $0.8364
Ext. Price: $500.16
MOQ: 598
Mult: 1

Discrete IGBTs

Definition:
An IGBT (Insulated Gate Bipolar Transistor) module is a high-power semiconductor device that combines the features of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a bipolar junction transistor (BJT). It is designed to provide efficient power control in various electronic systems.

Function:
The IGBT module functions as a voltage-controlled switch, allowing for the control of high currents and voltages with low input power. It is particularly useful in applications requiring fast switching and high efficiency. The IGBT operates by using an insulated gate to control the flow of current between its collector and emitter terminals, with the current being primarily carried by electrons and holes.

Applications:
IGBT modules are widely used in various industries due to their ability to handle high power levels with high efficiency and fast switching speeds. Some common applications include:
1. Electric vehicles (EVs) for motor control.
2. Renewable energy systems such as solar inverters and wind turbines.
3. Industrial motor drives for variable frequency drives (VFDs).
4. Power supplies for high-power electronics.
5. Rail transportation systems for traction control.
6. High-voltage direct current (HVDC) transmission systems.

Selection Criteria:
When selecting an IGBT module, the following criteria should be considered:
1. Voltage Rating: Ensure the module can handle the maximum voltage of the application.
2. Current Rating: Choose a module that can handle the expected current load.
3. Switching Speed: Consider the required switching speed for the application.
4. Thermal Characteristics: The module should have adequate thermal management capabilities.
5. Package Type: Depending on the application, different package types may be more suitable (e.g., press-pack, module, or smart module).
6. Reliability and Durability: Look for modules with proven reliability and a long service life.
7. Cost: Balance the cost of the module with its performance and reliability.
8. Manufacturer Support: Consider the support and availability of technical assistance from the manufacturer.

In summary, IGBT modules are essential components in modern power electronics, offering a combination of high efficiency, fast switching, and the ability to handle high power levels. Their selection should be based on a thorough understanding of the application requirements and the specific characteristics of the IGBT modules available on the market.
Please refer to the product rule book for details.