GaN FETs

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TP65H030G4PWS
Renesas Electronics
GAN TRANSISTOR, 650V, 55.7A, TO-247;
Quantity: 870
Ship Date: 6-12 working days
1+ $13.0417
5+ $12.3385
10+ $11.1438
50+ $10.976
100+ $10.6131
250+ $10.4483
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x $13.0417
Ext. Price: $26.08
MOQ: 2
Mult: 1
TP70H150G4LSG-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 14.2A, QFN;
Quantity: 2897
Ship Date: 3-12 working days
1+ $2.6162
10+ $2.2539
100+ $2.2137
500+ $2.1734
1000+ $2.1734
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x $2.6162
Ext. Price: $13.08
MOQ: 5
Mult: 1
TP65H035G4WS
Renesas Electronics
GAN TRANSISTOR, 650V, 46A, TO-247-3;
Quantity: 407
Ship Date: 3-12 working days
1+ $14.9235
5+ $14.3266
10+ $13.1327
50+ $13.1327
100+ $12.8939
250+ $12.8939
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x $14.9235
Ext. Price: $14.92
MOQ: 1
Mult: 1
TP65H030G4PQS-TR
Renesas Electronics
GAN TRANSISTOR, 650V, 55.7A, TOLL;
Quantity: 1930
Ship Date: 6-12 working days
1+ $13.0128
5+ $12.4538
10+ $11.3794
50+ $11.3441
100+ $11.1018
250+ $11.0658
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x $13.0128
Ext. Price: $26.02
MOQ: 2
Mult: 1
TP65H035G4YS
Renesas Electronics
GAN TRANSISTOR, 650V, 46.5A, TO-247;
Quantity: 1121
Ship Date: 3-12 working days
1+ $18.0313
5+ $16.1561
10+ $15.8676
50+ $15.5791
100+ $15.5791
250+ $15.5791
- +
x $18.0313
Ext. Price: $18.03
MOQ: 1
Mult: 1
TP70H300G4JSGB-TR
Renesas Electronics
GAN TRANSISTOR, 700V, 8A, QFN;
Quantity: 4828
Ship Date: 3-12 working days
1+ $1.5806
10+ $1.2815
100+ $1.1747
500+ $1.1747
1000+ $1.1534
5000+ $1.1534
- +
x $1.5806
Ext. Price: $11.06
MOQ: 7
Mult: 1
ISL70023SEHL/PROTO
Renesas Electronics
1 5V 700mV 14nC 100V 12mΩ 60A Freestanding 1 N-Channel Power Transistor,1individualNChannel CLCC-4 SMD mount
Quantity: 6
Ship Date: 9-14 working days
- +
x $
Ext. Price:
MOQ: 1
Mult: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.