GaN FETs

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GAN190-650EBEZ
nexperia
125W(Ta) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-8080-8 SMD mount
Quantity: 7500
Ship Date: 8-13 working days
2500+ $1.5115
7500+ $1.498
- +
x $1.5115
Ext. Price: $3778.75
MOQ: 2500
Mult: 2500
SPQ: 2500
GAN7R0-150LBEZ
nexperia
28W 6V 7.6nC@ 5V 150V 7mΩ@ 5V 865pF@ 85V FCLGA
Quantity: 7500
Ship Date: 8-13 working days
2500+ $1.3275
7500+ $1.3156
- +
x $1.3275
Ext. Price: $3318.75
MOQ: 2500
Mult: 2500
SPQ: 2500
GAN140-650EBEZ
nexperia
113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V
Quantity: 7500
Ship Date: 8-13 working days
2500+ $2.3132
7500+ $2.2926
- +
x $2.3132
Ext. Price: $5783.00
MOQ: 2500
Mult: 2500
SPQ: 2500
GAN063-650WSAQ
nexperia
143W(Ta) 20V 4.5V@1mA 15nC@ 10 V 650V 60mΩ@ 25A,10V 34.5A 1nF@400V 1individualNChannel TO-247-3 Through hole mounting
Quantity: 260
Ship Date: 8-13 working days
30+ $13.1177
90+ $13.0006
- +
x $13.1177
Ext. Price: $393.53
MOQ: 30
Mult: 30
SPQ: 30
GAN080-650EBEZ
nexperia
240W 7V 6.2nC@ 6V 650V 80mΩ@ 6V 225pF@ 400V
Quantity: 5000
Ship Date: 8-13 working days
2500+ $3.391
7500+ $3.3607
- +
x $3.391
Ext. Price: $8477.50
MOQ: 2500
Mult: 2500
SPQ: 2500
GANE3R9-150QBAZ
nexperia
GAN TRANSISTOR, 100A, 20NC, VQFN;
Quantity: 2257
Ship Date: 3-12 working days
1+ $6.8713
5+ $6.8713
10+ $6.1567
50+ $6.0468
100+ $5.9368
250+ $5.9368
- +
x $6.8713
Ext. Price: $13.74
MOQ: 2
Mult: 1
GANB4R8-040CBAZ
nexperia
13W(Ta) 2.4V@1mA 15.8nC@ 5 V 40V 4.8mΩ@ 10A,5V 887pF@20V 1individualNChannel SMD mount
Quantity: 4912
Ship Date: 3-12 working days
1+ $1.5159
10+ $1.1473
100+ $1.1267
500+ $1.1267
1000+ $1.1063
5000+ $1.1063
- +
x $1.5159
Ext. Price: $10.61
MOQ: 7
Mult: 1
GAN3R2-100CBEAZ
nexperia
394W 6V 9.2nC@ 5V 100V 3.2mΩ@ 5V 1nF@ 50V WLCSP SMD mount
Quantity: 3000
Ship Date: 8-13 working days
1500+ $1.7612
4500+ $1.7455
- +
x $1.7612
Ext. Price: $2641.80
MOQ: 1500
Mult: 1500
SPQ: 1500
GAN041-650WSBQ
nexperia
Nexperia MOSTube, Vds=650 V, 47.2 A, TO-247encapsulation, Through hole mounting
Quantity: 257
Ship Date: 14-19 working days
60+ $7.9884
100+ $7.9002
300+ $7.8246
- +
x $7.9884
Ext. Price: $591.14
MOQ: 74
Mult: 1
SPQ: 1
GAN190-650FBEZ
nexperia
125W(Tc) 7V 2.5V@12.2mA 2.8nC@ 6 V 650V 190mΩ@ 3.9A,6V 96pF@400V 1individualNChannel DFN-5060-5 SMD mount
Quantity: 5000
Ship Date: 8-13 working days
2500+ $1.4195
7500+ $1.4068
- +
x $1.4195
Ext. Price: $3548.75
MOQ: 2500
Mult: 2500
SPQ: 2500
GAN140-650FBEZ
nexperia
113W 7V 3.5nC@ 6V 650V 140mΩ@ 6V 125pF@ 400V
Quantity: 5000
Ship Date: 8-13 working days
2500+ $2.1555
7500+ $2.1362
- +
x $2.1555
Ext. Price: $5388.75
MOQ: 2500
Mult: 2500
SPQ: 2500

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.