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GaN FETs

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BSF083N03LQ G
Infineon Technologies
1 2.2W 20V 8.5nC@ 4.5V,18nC@ 10V 30V 8.3mΩ@ 10V 13A Freestanding 1.35nF@ 15V 1individualNChannel SON SMD mount,glue mount 6.35mm*5.05mm*700μm
Quantity: 5622
Ship Date: 15-19 working days
08+
300+ $0.3563
500+ $0.3531
1000+ $0.3434
5000+ $0.3434
- +
x $0.3563
Ext. Price: $120.07
MOQ: 337
Mult: 1
SPQ: 1
IGLD60R070D1AUMA3
Infineon Technologies
114W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel SON SMD mount
Quantity: 3603
Ship Date: 15-19 working days
1+ $17.1968
100+ $14.657
500+ $11.9816
- +
x $17.1968
Ext. Price: $17.19
MOQ: 1
Mult: 1
IGLR65R140D2XUMA1
Infineon Technologies
650V 13A 1individualNChannel SMD mount
Quantity: 4895
Ship Date: 3-12 working days
1+ $2.1396
10+ $1.8434
100+ $1.8105
500+ $1.7776
1000+ $1.7776
- +
x $2.1396
Ext. Price: $10.69
MOQ: 5
Mult: 1
IGO60R070D1AUMA2
Infineon Technologies
125W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel DSO SMD mount
Quantity: 40
Ship Date: 10-15 working days
1+ $15.3238
25+ $13.9177
50+ $13.6334
100+ $12.765
250+ $12.51
- +
x $15.3238
Ext. Price: $76.61
MOQ: 5
Mult: 1
IGLD65R080D2AUMA1
Infineon Technologies
GAN TRANSISTOR, 650V, 18A, LSON;
Quantity: 2308
Ship Date: 3-12 working days
1+ $3.6804
10+ $3.2976
100+ $3.1798
500+ $3.1798
1000+ $3.1798
- +
x $3.6804
Ext. Price: $11.04
MOQ: 3
Mult: 1
IGC033S10S1XTMA1
Infineon Technologies
100V 76A 1individualPChannel SMD mount
Quantity: 309
Ship Date: 3-12 working days
1+ $2.8031
10+ $2.415
100+ $2.3719
500+ $2.3287
1000+ $2.3287
- +
x $2.8031
Ext. Price: $11.21
MOQ: 4
Mult: 1
IGT65R025D2XTMA1
Infineon Technologies
GAN TRANSISTOR, 650V, 70A, HSOF;
Quantity: 1455
Ship Date: 3-12 working days
1+ $10.5873
5+ $10.1638
10+ $9.3168
50+ $9.3168
100+ $9.1474
250+ $9.1474
- +
x $10.5873
Ext. Price: $21.17
MOQ: 2
Mult: 1
IGLR65R200D2XUMA1
Infineon Technologies
650V 9.2A 1individualNChannel SMD mount
Quantity: 3638
Ship Date: 3-12 working days
1+ $1.5038
10+ $1.2193
100+ $1.1177
500+ $1.1177
1000+ $1.0974
5000+ $1.0974
- +
x $1.5038
Ext. Price: $12.03
MOQ: 8
Mult: 1
GS-065-018-2-L-MR
Infineon Technologies
2.6V@4.8mA 4nC@ 6 V 650V 110mΩ@ 5.5A,6V 132pF@400V 1individualNChannel SMD mount
Quantity: 212
Ship Date: 6-13 working days
1+ $10.9135
10+ $7.766
100+ $6.174
250+ $6.174
500+ $5.502
1000+ $4.893
- +
x $10.9135
Ext. Price: $10.91
MOQ: 1
Mult: 1
SPQ: 1
IGLD60R190D1AUMA1
Infineon Technologies
62.5W(Tc) 10V 1.6V@ 960µA 600V Freestanding 157pF@400V 1individualNChannel LSON-8 SMD mount
Quantity: 15
Ship Date: 6-8 working days
1+ $13.3243
- +
x $13.3243
Ext. Price: $53.29
MOQ: 4
Mult: 1
SPQ: 1
IGLR65R270D2XUMA1
Infineon Technologies
650V 7.2A 1individualNChannel SMD mount
Quantity: 3641
Ship Date: 3-12 working days
1+ $1.2329
10+ $0.9996
100+ $0.9163
500+ $0.9163
1000+ $0.8997
5000+ $0.8997
- +
x $1.2329
Ext. Price: $13.56
MOQ: 11
Mult: 1
IGB110S101XTMA1
Infineon Technologies
GAN TRANSISTOR, 100V, 23A, VSON-4;
Quantity: 3504
Ship Date: 3-12 working days
1+ $1.2926
10+ $0.9401
100+ $0.8617
500+ $0.8617
1000+ $0.846
5000+ $0.846
- +
x $1.2926
Ext. Price: $15.51
MOQ: 12
Mult: 1
IGLT65R035D2ATMA1
Infineon Technologies
650V 47A 1individualNChannel SMD mount
Quantity: 1200
Ship Date: 3-12 working days
1+ $8.5241
5+ $8.5241
10+ $7.6376
50+ $7.5012
100+ $7.3649
250+ $7.3649
- +
x $8.5241
Ext. Price: $17.04
MOQ: 2
Mult: 1
GS-065-011-1-L-TR
Infineon Technologies
Quantity: 2253
Ship Date: 6-13 working days
1+ $5.796
10+ $4.444
100+ $3.5316
500+ $3.045
1000+ $2.6145
3000+ $2.352
- +
x $5.796
Ext. Price: $5.79
MOQ: 1
Mult: 1
SPQ: 1
BSS139 L6327
Infineon Technologies
1 360mW 20V 250V 14Ω 40mA Freestanding 1individualNChannel SOT-23-3 SMD mount,glue mount 2.9mm*1.3mm*1.1mm
Quantity: 2981
Ship Date: 6-12 working days
600+ $0.2478
- +
x $0.2478
Ext. Price: $500.55
MOQ: 2020
Mult: 5
SPQ: 5
IGLR60R340D1XUMA1
Infineon Technologies
41.6W(Tc) 1.6V@ 530µA 600V 87.7pF@400V 1individualNChannel SMD mount
Quantity: 4931
Ship Date: 15-19 working days
1+ $6.5076
100+ $5.1442
500+ $4.0182
- +
x $6.5076
Ext. Price: $6.50
MOQ: 1
Mult: 1
IGO60R070D1AUMA1
Infineon Technologies
1 125W(Tc) 10V 1.6V@2.6mA 5.8nC 600V 70mΩ 31A Freestanding 380pF@400V 1individualNChannel SOP SMD mount
Quantity: 518
Ship Date: 15-19 working days
19+
1+ $16.147
25+ $15.4906
50+ $14.8343
100+ $14.5717
300+ $14.4404
500+ $14.3091
1000+ $13.9153
5000+ $13.9153
- +
x $16.147
Ext. Price: $129.17
MOQ: 8
Mult: 1
SPQ: 1
IGLR60R190D1XUMA1
Infineon Technologies
55.5W(Tc) 1.6V@ 960µA 600V 157pF@400V 1individualNChannel SMD mount
Quantity: 4934
Ship Date: 15-19 working days
1+ $8.7318
100+ $6.903
500+ $5.391
- +
x $8.7318
Ext. Price: $8.73
MOQ: 1
Mult: 1
IGLT65R110D2ATMA1
Infineon Technologies
650V 15A 1individualNChannel SMD mount
Quantity: 1253
Ship Date: 3-12 working days
1+ $2.5773
10+ $2.2204
100+ $2.1808
500+ $2.1411
1000+ $2.1411
- +
x $2.5773
Ext. Price: $12.88
MOQ: 5
Mult: 1
IGT60R190D1ATMA1
Infineon Technologies
52W 10V 600V SO
Quantity: 1803
Ship Date: 15-19 working days
1+ $8.5725
100+ $6.7765
500+ $5.2925
- +
x $8.5725
Ext. Price: $8.57
MOQ: 1
Mult: 1
IGLT65R045D2ATMA1
Infineon Technologies
650V 38A 1individualNChannel SMD mount
Quantity: 1006
Ship Date: 3-12 working days
1+ $6.6226
5+ $6.3679
10+ $5.7056
50+ $5.6037
100+ $5.6037
250+ $5.6037
- +
x $6.6226
Ext. Price: $13.24
MOQ: 2
Mult: 1
IGC019S06S1XTMA1
Infineon Technologies
GAN TRANSISTOR, 60V, 99A, TSON;
Quantity: 3424
Ship Date: 3-12 working days
1+ $2.6983
10+ $2.3246
100+ $2.2831
500+ $2.2416
1000+ $2.2416
- +
x $2.6983
Ext. Price: $10.79
MOQ: 4
Mult: 1
IGOT60R070D1AUMA1
Infineon Technologies
1 125W(Tc) 10V 1.6V@2.6mA 5.8nC 600V 70mΩ 31A 380pF@400V 1individualNChannel SOP SMD mount
Quantity: 91
Ship Date: 15-19 working days
1+ $18.6065
- +
x $18.6065
Ext. Price: $18.60
MOQ: 1
Mult: 1
IGOT60R070D1AUMA3
Infineon Technologies
125W(Tc) 10V 1.6V@2.6mA 600V 60A 380pF@400V 1individualNChannel SO SMD mount
Quantity: 1600
Ship Date: 13-14 working days
800+ $7.1961
- +
x $7.1961
Ext. Price: $5756.88
MOQ: 800
Mult: 800
BSL202SN L6327
Infineon Technologies
1 2W 12V 8.7nC@ 4.5V 20V 22mΩ 7.5A Freestanding 1individualNChannel TSOP-6 SMD mount,glue mount 3mm*1.5mm*1.1mm
Quantity: 605
Ship Date: 15-19 working days
09+
500+ $0.1461
1000+ $0.1421
5000+ $0.1421
- +
x $0.1461
Ext. Price: $120.09
MOQ: 822
Mult: 1
SPQ: 1

GaN FETs

Gallium Nitride (GaN) MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are advanced semiconductor devices that leverage the material properties of gallium nitride to achieve superior performance in high-power and high-frequency applications.

Definition:
GaN MOSFETs are a type of power transistor that combines the benefits of GaN's wide bandgap properties with the established MOSFET structure. They are designed to handle high voltages and currents with minimal power loss, making them ideal for applications that demand high efficiency and fast switching speeds.

Function:
The primary function of a GaN MOSFET is to control the flow of current in an electronic circuit. They operate by applying a voltage to the gate terminal, which in turn modulates the conductivity of the channel between the source and drain terminals. GaN MOSFETs are known for their high electron mobility, which allows for faster switching and lower on-resistance compared to silicon-based MOSFETs.

Applications:
GaN MOSFETs are used in a variety of applications due to their high efficiency and ability to handle high power densities:
1. Power Supplies: In switching power supplies for consumer electronics and industrial equipment.
2. Electric Vehicles: For electric motor drives and battery management systems.
3. Renewable Energy: In solar inverters and wind turbine converters.
4. Telecommunications: For RF power amplifiers in base stations.
5. and : In radar systems and other high-reliability applications.

Selection Criteria:
When selecting a GaN MOSFET, consider the following criteria:
1. Voltage Rating: Ensure it matches the voltage requirements of your application.
2. Current Rating: Choose a device that can handle the expected current load.
3. Switching Speed: Faster switching times can reduce energy losses and improve efficiency.
4. Thermal Characteristics: Consider the device's thermal resistance and the ability to dissipate heat.
5. Package Type: The physical form factor should be compatible with your circuit design.
6. Reliability and Durability: Look for devices with proven reliability in similar applications.
7. Cost: While GaN MOSFETs can be more expensive than silicon counterparts, the overall system cost savings in terms of efficiency and size reduction may justify the investment.

In summary, GaN MOSFETs offer significant advantages in high-power and high-frequency applications due to their superior material properties and performance characteristics. When selecting a GaN MOSFET, it's important to consider the specific requirements of your application to ensure optimal performance and efficiency.
Please refer to the product rule book for details.