Bipolar Transistors (BJT)

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2SC2714
isc
NPN SOT-23
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2SA1797R
SHIKUES
PNP 100nA 1.5A SOT-89-3
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2SA812-M7
Slkor
Triode(BJT)
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BD651F
isc
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BDP950
isc
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BST50
isc
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2SC3074
isc
Silicon NPN Power Transistor
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2SA2097
isc
Silicon PNP Power Transistor
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2SB1094
isc
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2SA1744-AZ
isc
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2SC3320
isc
NPN 80W 7V 1mA 500V 400V 15A TO-3PN Through hole mounting
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2SC3790
isc
Silicon NPN Power Transistor
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MJE801
isc
Silicon NPN Darlington Power Transistor
Quantity: 8000
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2SA1249
isc
Silicon PNP Power Transistor
Quantity: 2000
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HN1C03FU-B(TE85L,F
TOSHIBA
200mW 25V 50V 20V 300mA US-6 SMD mount 2mm*1.25mm*900μm
Quantity: 3000
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2SB1132
YONGYUTAI
Triode
Quantity: 300000
In Stock
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2SA1015-MS
MSKSEMI
PNP 150mA SOT-23
Quantity: 3000
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2SC3324-BL(TE85L,F)
TOSHIBA
Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R
Quantity: 3000
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EMH11
CJ
Quantity: 30000
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APT13003EU-G1
HXY MOSFET
IC:1.5A,VCEO:500V,TYPE:NPN,HFE:20-25,
Quantity: 360000
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MOQ: 1000
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2SC2383
Slkor
1.5V NPN 500mW 6V 160V 160V 1A SOT-89-3 4.6mm(length)*2.6mm(width)
Quantity: 30000
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57000+ $0.023
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Ext. Price: $78.90
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2SC2383
UDU SEMICONDUCTOR
1V @IC=500 mA,IB =50mA NPN 160V 1A
Quantity: 300000
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MOQ: 1000
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MMDT5551
HXY MOSFET
: SOT-363NPNTriode,160VVCEOand0.2A,100TO300,,,。
Quantity: 360000
Ship Date: 5-7 working days
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3000+ $0.0122
6000+ $0.012
9000+ $0.0117
123000+ $0.0107
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Ext. Price: $36.60
MOQ: 3000
Mult: 3000
SPQ: 3000
2N6517
CJ
1V@ 0.005A,0.05A 350V 6V 500μA TO-92
Quantity: 1000
In Stock
25+
1000+ $0.0327
3000+ $0.0318
21000+ $0.0308
- +
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Ext. Price: $32.70
MOQ: 1000
Mult: 1000
SPQ: 1000
BCX51
CJ
500mV@ 500mA,50mA PNP 1.3W 100nA 45V 45V 1A SOT-89-3L SMD mount
Quantity: 3000
In Stock
25+
1000+ $0.0192
3000+ $0.0186
37000+ $0.0181
- +
x $0.0192
Ext. Price: $19.20
MOQ: 1000
Mult: 1000
SPQ: 1000

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.