Bipolar Transistors (BJT)

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BD201
isc
BJT
Quantity: 11000
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SPQ: 1000
2SB827
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Silicon PNP Power Transistor
Quantity: 4750
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600+ $0.5356
1800+ $0.5266
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2SC4029
isc
Silicon NPN Power Transistor
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400+ $2.0083
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MMST4403
YANGJIE
-0.4V@Ic=-150mA,Ib=15mA PNP 100nA -40V 200mA SOT-323 SMD mount
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BCR 08PN H6327
Infineon Technologies
250mW 50V 50V 100mA SOT-26 Bracket mounting,SMD mount 2mm(length)*125cm(width)
Quantity: 3810
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BD436STU
ON Semiconductor
500mV@ 200mA,2A PNP 36W 5V 100μA 32V 32V 4A TO-126-3 Through hole mounting 8mm*3.25mm*11mm
Quantity: 2976
Ship Date: 10-15 working days
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2N6043
isc
BJT
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2N6287
isc
Silicon PNP Darlington Power Transistor
Quantity: 1000
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2SA1869
isc
BJT
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MOQ: 1000
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2SA940
isc
PNP 25W TO-220C
Quantity: 10000
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3000+ $0.158
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Ext. Price: $160.69
MOQ: 1000
Mult: 1000
SPQ: 1000
2PD601ASW,115
nexperia
250mV@ 10mA,100mA NPN 200mW 6V 10nA 60V 50V 100mA SOT-323 SMD mount 2.2mm*1.35mm*1mm
Quantity: 2908
Ship Date: 3-12 working days
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Ext. Price: $11.95
MOQ: 245
Mult: 5
BDX54B
isc
Silicon PNP Darlington Power Transistor
Quantity: 10000
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1000+ $0.3347
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Ext. Price: $334.70
MOQ: 1000
Mult: 1000
SPQ: 1000
ZXTP2041F
DIODES
350mW 5V 40V 40V 1A SOT SMD mount
Quantity: 1032
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5000+ $0.1127
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MOQ: 155
Mult: 5
2SC1969
isc
Silicon NPN RF Power Transistor
Quantity: 1000
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1000+ $2.6644
3000+ $2.62
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Ext. Price: $2664.40
MOQ: 1000
Mult: 1000
SPQ: 1000
2SC2233
isc
BJT
Quantity: 7500
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1000+ $0.3347
3000+ $0.3291
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Ext. Price: $334.70
MOQ: 1000
Mult: 1000
SPQ: 1000
RN1401,LF(T
TOSHIBA
Toshiba NPNdigital transistor, TO-236MOD (SC-59)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
Quantity: 6
In Stock
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1+ $0.0347
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Ext. Price: $0.03
MOQ: 1
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SPQ: 3000
MJ15004G
ON Semiconductor
onsemi PNPTransistors, TO-204AAencapsulation, Through hole mounting, Maximum DC collector current-20 A, maximum collector-emission voltage-140 V
Quantity: 265
Ship Date: 6-12 working days
1+ $5.7
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Ext. Price: $51.30
MOQ: 9
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ULQ2802A
STMicroelectronics
STMicroelectronics Darlington transistor, NPNTriode, 500 mA, PDIPencapsulation, , Through hole mounting, 18Pin
Quantity: 1257
Ship Date: 6-12 working days
10+ $1.5391
100+ $1.5016
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Ext. Price: $47.71
MOQ: 31
Mult: 1
TIP33D
isc
BJT
Quantity: 10000
Ship Date: 3-10 working days
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600+ $0.5356
1800+ $0.5266
3000+ $0.5133
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Ext. Price: $321.36
MOQ: 600
Mult: 600
SPQ: 600
RN2131MFV,L3F
TOSHIBA
PNP - Pre-Biased 100nA 50V 100mA SMD mount
Quantity: 7897
Ship Date: 7-12 working days
1+ $0.208
10+ $0.1248
100+ $0.064
500+ $0.0464
1000+ $0.0407
2000+ $0.0359
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x $0.208
Ext. Price: $1.24
MOQ: 6
Mult: 1
SPQ: 1
FJP5304DTU
ON Semiconductor
1.5V@ 500mA,2.5A NPN 70W 12V 250mA 700V 400V 4A TO-220-3 Through hole mounting
Quantity: 8000
Ship Date: 10-15 working days
1+ $0.9581
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x $0.9581
Ext. Price: $280.72
MOQ: 293
Mult: 1
KTC8550S-C-RTK/P
KEC
PNP 50nA 30V 800mA SOT-23 SMD mount
Quantity: 56000
Ship Date: 3-5 working days
18+
9000+ $0.0078
18000+ $0.0072
27000+ $0.0071
54000+ $0.0069
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Ext. Price: $70.20
MOQ: 9000
Mult: 9000
SPQ: 9000
BCP56-10TX
nexperia
Nexperia NPNTransistors, SOT-223 (SC-73)encapsulation, SMD mount, Maximum DC collector current1 A, maximum collector-emission voltage80 V
Quantity: 6600
In Stock
19+
1000+ $0.0135
2000+ $0.0134
4000+ $0.0131
8000+ $0.0129
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x $0.0135
Ext. Price: $13.50
MOQ: 1000
Mult: 1000
SPQ: 1000
2SB806
isc
BJT
Quantity: 7500
Ship Date: 5-15 working days
20+
1000+ $0.1339
3000+ $0.1317
5000+ $0.1283
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x $0.1339
Ext. Price: $133.90
MOQ: 1000
Mult: 1000
SPQ: 1000
S-LBC807-40WT1G
LRC
Quantity: 60000
Ship Date: 5-10 working days
25+
3000+ $0.0131
30000+ $0.0127
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x $0.0131
Ext. Price: $39.29
MOQ: 3000
Mult: 3000
SPQ: 3000

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.