United Silicon Carbide UJ3C065030K3S image
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    UJ3C065030K3S

    Part Number: UJ3C065030K3S

    Description: 51nC@ 15 V 441W(Tc) 1.5nF@100V 1 35mΩ@ 50A,12V 85A 650V 6V@10mA 25V,25V Freestanding 1individualNChannel TO-247-3 Through hole mounting
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    Specifications
    Attribute Value
    cate_name SiC MOSFETs
    rohs Compliance
    reference_package TO-247-3
    mounting Through hole mounting
    application_level Industrial
    lifecycle On sale
    spm Tube
    min_operating_temperature -55℃(TJ)
    max_operating_temperature 175℃(TJ)
    length_width_height
    breakdown_voltage -
    ciss_max_input_capacitance_at_different_vds 1.5nF@100V
    configure Freestanding
    drain_current 85A
    drain_saturation_current -
    drain_source_resistance 35mΩ@ 50A,12V
    drain_source_voltage 650V
    fet_type 1individualNChannel
    gate_charge 51nC@ 15 V
    gate_source_threshold_voltage 6V@10mA
    gate_source_voltage 25V,25V
    max_power -
    max_power_dissipation 441W(Tc)
    number_of_channels 1
    Manufacturer Introduction
    United Silicon Carbide, Inc. (UnitedSiC), founded in Monmouth Junction, New Jersey, is a high-tech semiconductor company specializing in the development and manufacture of silicon carbide (SiC) power devices. Since its inception, UnitedSiC has been dedicated to advancing the performance and efficiency of energy conversion and power management systems through the innovative use of silicon carbide technology.

    Silicon carbide is a semiconductor material that offers significant advantages over traditional silicon in power applications, including higher efficiency, greater power density, better thermal performance, and improved reliability. UnitedSiC leverages these properties to produce a wide range of SiC devices, including diodes, FETs (Field-Effect Transistors), and modules that are designed to meet the rigorous demands of high-power applications across various industries.

    UnitedSiC's product portfolio is engineered to serve a diverse array of applications, such as electric vehicles (EVs), renewable energy (solar and wind power), data center power supplies, industrial motors, and other high-power, high-efficiency applications. The company's SiC diodes and transistors are particularly noted for their ability to reduce energy loss, increase power density, and operate at high temperatures, which are critical factors in these sectors.

    The company's commitment to innovation is underscored by its robust research and development efforts. UnitedSiC collaborates closely with academic institutions, research organizations, and industry partners to stay at the forefront of silicon carbide technology. This collaborative approach helps to ensure that UnitedSiC remains at the cutting edge of materials science, device design, and manufacturing processes.

    UnitedSiC operates a state-of-the-art manufacturing facility equipped with advanced equipment for wafer fabrication, testing, and packaging. This facility adheres to stringent quality control standards to ensure that each product meets or exceeds customer expectations in terms of performance and reliability. The company's manufacturing capabilities are complemented by a global network of sales and support offices, providing customers around the world with timely access to its products and technical assistance.

    As a leader in silicon carbide technology, UnitedSiC is also committed to sustainability. The company's products contribute to energy savings and reduced carbon emissions by improving the efficiency of power systems and enabling the adoption of clean technologies such as electric vehicles and renewable energy generation.

    In summary, United Silicon Carbide, Inc. is a pioneering semiconductor company that specializes in the development and manufacture of silicon carbide power devices. With a strong focus on innovation, quality, and customer service, UnitedSiC is dedicated to advancing the performance of energy conversion and power management systems across multiple industries, while also contributing to environmental sustainability through energy-efficient technologies.
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