Wolfspeed CAB320M17XM3 image
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    CAB320M17XM3

    Manufacturer: Wolfspeed

    Part Number: CAB320M17XM3

    Description: 1.7KV base mount
    Quantity: 0
    Ship Date :
    7-12 working days
    MOQ 1 Mult 1 SPQ 1
    Ext. Price: $1329.90
    Quantity Unit Price
    1
    $1329.9
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    Specifications
    Attribute Value
    cate_name SiC MOSFETs
    Datasheet CAB320M17XM3 Wolfspeed
    rohs
    reference_package
    mounting base mount
    application_level
    lifecycle On sale
    spm boxed
    operating_temperature
    length_width_height
    breakdown_voltage -
    ciss_max_input_capacitance_at_different_vds -
    configure -
    drain_current -
    drain_saturation_current -
    drain_source_resistance -
    drain_source_voltage 1.7KV
    fet_type -
    gate_charge -
    gate_source_threshold_voltage -
    gate_source_voltage -
    max_power -
    max_power_dissipation -
    number_of_channels -
    Manufacturer Introduction
    Wolfspeed, Inc., formerly known as Cree, Inc., is a pioneering company in the semiconductor industry, specializing in silicon carbide (SiC) and gallium nitride (GaN) technologies. Founded in 1987 and headquartered in Durham, North Carolina, USA, Wolfspeed has been at the forefront of advancing power and radio frequency (RF) applications through its innovative use of wide bandgap semiconductor technology.

    Wolfspeed’s product portfolio includes SiC and GaN materials, power devices, and RF devices, which are critical components used in a variety of applications such as electric vehicles, fast charging, renewable energy, telecommunications, and and defense. These technologies enable higher efficiency, faster switching speeds, and greater power density compared to traditional silicon-based components, leading to more compact and energy-efficient products.

    The company’s silicon carbide materials are renowned for their high quality and have set industry standards for performance. Wolfspeed’s SiC devices are designed to handle high voltages and temperatures more efficiently, making them ideal for high-power applications like power grids, industrial power supplies, and electric vehicles. Their ability to reduce energy loss and improve thermal management significantly enhances the performance and longevity of electronic systems.

    In the field of gallium nitride, Wolfspeed has developed high-performance GaN RF devices that are essential for broadband, telecommunications, and communications. These devices offer superior frequency handling capabilities and power efficiency, which are crucial for modern communication infrastructure and radar systems.

    Wolfspeed is also known for its commitment to innovation and quality. The company invests heavily in research and development to push the boundaries of what is possible with wide bandgap semiconductor technologies. This dedication has led to numerous breakthroughs and a robust patent portfolio that strengthens its position as a leader in the market.

    The company operates state-of-the-art manufacturing facilities in the United States, which are equipped with advanced production technologies to ensure high standards of quality and reliability. Wolfspeed’s manufacturing capabilities are vertically integrated, allowing them to maintain control over the entire production process, from material creation to the final assembly of devices.

    Wolfspeed’s mission is to empower the next generation of electric and electronic systems through the use of innovative materials and semiconductor solutions that exceed the performance of conventional technologies. With a global customer base and a reputation for excellence, Wolfspeed continues to drive the transition towards a more energy-efficient future and remains a key player in the semiconductor industry.
    Unikeyic will help you determine the product that suits you. The following are popular searches related to Wolfspeed based SiC MOSFETs
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