1SS398(F)
Manufacturer: TOSHIBA
Part Number: 1SS398(F)
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Attribute | Value |
cate_name | Schottky Diodes |
Datasheet | 1SS398(F) TOSHIBA |
rohs | |
reference_package | SC-59,SOT-346 |
mounting | SMD mount |
application_level | Industrial |
lifecycle | |
spm | |
operating_temperature | -55℃~125℃ |
length_width_height | 2.9mm*2.9mm*1.5mm |
configure | - |
forward_current | 300mA |
repetitive_peak_reverse_voltage | 420V |
reverse_current | - |
reverse_recovery_time | 500ns |
surge_forward_current | - |
vr_reverse_voltage | - |
Overview:
The TOSHIBA 1SS398(F) is a high-performance N-Channel Power MOSFET designed for a wide range of applications, including power electronics, motor drives, and renewable energy systems. With its advanced technology and robust design, the 1SS398(F) offers excellent electrical characteristics, making it an ideal choice for demanding power management solutions.
Features:
1. High Voltage and Current Ratings: The 1SS398(F) can handle voltages up to 100V and continuous drain currents up to 35A, ensuring reliable operation in various power applications.
2. Low On-Resistance: The MOSFET features a low on-resistance (RDS(on)) of 15mΩ (maximum), which helps reduce power dissipation and improve efficiency.
3. Fast Switching Speed: With a gate charge of 41nC (maximum) and a propagation delay time of 45ns (maximum), the 1SS398(F) provides fast switching capabilities for high-speed applications.
4. High Input Impedance: The device offers a high input impedance of 10^11 ohms, minimizing the driving power required for gate control.
5. Built-in Protection Features: The 1SS398(F) includes protection features such as drain-gate diode and thermal shutdown, ensuring safe operation and extended device life.
Development Support:
TOSHIBA provides comprehensive development support for the 1SS398(F), including detailed datasheets, application notes, and design guides. This support helps engineers quickly integrate the MOSFET into their designs and optimize performance.
Application Fields:
The TOSHIBA 1SS398(F) is suitable for various applications, including:
1. Power Supplies: DC-DC converters, AC-DC converters, and battery chargers.
2. Motor Drives: Brushless DC motors, stepper motors, and induction motors.
3. Renewable Energy Systems: Solar inverters, wind power converters, and energy storage systems.
4. Industrial Automation: Servo drives, robotics, and programmable logic controllers (PLCs).
Parameter Introduction:
- Voltage (VDS): -100V
- Continuous Drain Current (ID): Up to 35A
- On-Resistance (RDS(on)): 15mΩ (maximum)
- Gate-Source Voltage (VGS): -4.5V to +10V
- Gate Charge (Qg): 41nC (maximum)
- Propagation Delay Time (td(on)): 45ns (maximum)
- Storage Temperature: -65°C to +175°C
FAQs:
Q1: What is the maximum voltage and current that the TOSHIBA 1SS398(F) can handle?
A1: The 1SS398(F) can handle voltages up to 100V and continuous drain currents up to 35A.
Q2: Does the 1SS398(F) have any built-in protection features?
A2: Yes, the MOSFET includes protection features such as a drain-gate diode and thermal shutdown.
Q3: What is the typical application of the TOSHIBA 1SS398(F)?
A3: The 1SS398(F) is commonly used in power supplies, motor drives, renewable energy systems, and industrial automation applications.
Q4: Can I find development support for the 1SS398(F)?
A4: Yes, TOSHIBA provides comprehensive development support, including datasheets, application notes, and design guides.
Q5: What is the storage temperature range for the TOSHIBA 1SS398(F)?
A5: The storage temperature range for the 1SS398(F) is -65°C to +175°C.
Please refer to the product rule book for details.
Toshiba's journey began with the production of telegraph equipment and quickly expanded into a wide array of electrical products. Over the decades, Toshiba has been a pioneer in technological innovation. It played a significant role in the development of Japan's first radar, the TAC digital computer, and the NAND flash memory, which has become an integral part of modern digital devices.
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In recent years, Toshiba has focused on integrating artificial intelligence and the Internet of Things (IoT) into its operations to enhance performance and create new business opportunities. The company's "Smart Community" initiative aims to leverage these technologies to build sustainable systems that manage energy, water, and other resources more efficiently.
Despite facing challenges such as the Fukushima nuclear disaster and financial irregularities, Toshiba has taken significant steps towards restructuring and revitalizing its business. This includes divesting from certain segments and focusing more on high-margin businesses like social infrastructure, energy, and storage solutions.
Toshiba's corporate philosophy emphasizes commitment to people, the future, and excellence. With a global network of over 200 companies, Toshiba continues to innovate and contribute to a high-quality society and a healthier planet by developing key technologies and solutions in a wide range of sectors. As it moves forward, Toshiba remains dedicated to the safety, security, and comfort of society, aiming to create value through innovation and cutting-edge technology.
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