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NTD4808NT4G-VB
Other Names: NTD4808NT4G-VB
Manufacturer: VBsemi
Part Number: NTD4808NT4G-VB
Description: TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。
NChannel,30V,60A,RDS(ON),10mΩ@10V,11mΩ@4.5V,20Vgs(±V)；1.6Vth(V) encapsulation：TO252
This MOSFET is suitable for applications requiring high current and low voltage drop，Capable of in high power、Perform excellently in high frequency circuits。Its trench technology can improve device performance and stability，Suitable for electronic devices and systems requiring high efficiency and high stability。
Datasheet: VBsemi NTD4808NT4G-VB Datasheet (PDF)
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Quantity: 25,000
3-5 working days
Quantity
25
Unit Price
$0.1508
Ext. Price
$3.77
$3.77
MOQ 25 Mult 25 SPQ 2,500 DC 25+
Pricing (USD)
QUANTITY UNIT PRICE EXT PRICE
25
$0.1508
$3.77
2,500
$0.1483
$370.75
5,000
$0.1445
$722.50
Volume discounts available for larger quantities.
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Specifications
| Attribute | Value |
| cate_name | |
| datasheet | |
| rohs | |
| reference_package | TO-252 |
| mounting | SMD mount |
| application_level | Industrial |
| lifecycle | On sale |
| spm | |
| operating_temperature | -55℃~150℃ |
| length_width_height | |
| ciss_max_input_capacitance_at_different_vds | - |
| configure | - |
| drain_current | 60A |
| drain_source_resistance | 10mΩ@10V,11mΩ@4.5V |
| drain_source_voltage | 30V |
| fet_type | 1individualNChannel |
| gate_charge | - |
| gate_source_threshold_voltage | 1.6V |
| gate_source_voltage | 20V |
| max_power_dissipation | - |
| number_of_channels | - |
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