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NP22N055IHE-E1-AY-VB
Other Names: NP22N055IHE-E1-AY-VB
Manufacturer: VBsemi
Part Number: NP22N055IHE-E1-AY-VB
Description: TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。
NChannel,60V,45A,RDS(ON),24mΩ@10V,28mΩ@4.5V,20Vgs(±V)；1.8Vth(V) encapsulation：TO252
Is a superior performance powerMOSFET，Suitable for power electronics applications in various fields，Features high efficiency、Stable and reliable characteristics，Can meet power supply modules、Electric tool、Electric Vehicle Controller、Industrial Automation、LEDLighting different application needs。
Datasheet: VBsemi NP22N055IHE-E1-AY-VB Datasheet (PDF)
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Quantity: 25,000
3-5 working days
Quantity
25
Unit Price
$0.1939
Ext. Price
$4.85
$4.85
MOQ 25 Mult 25 SPQ 2,500 DC 25+
Pricing (USD)
QUANTITY UNIT PRICE EXT PRICE
25
$0.1939
$4.85
2,500
$0.1907
$476.75
5,000
$0.1858
$929.00
Volume discounts available for larger quantities.
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Specifications
| Attribute | Value |
| cate_name | |
| datasheet | |
| rohs | |
| reference_package | TO-252 |
| mounting | SMD mount |
| application_level | Industrial |
| lifecycle | On sale |
| spm | |
| operating_temperature | -55℃~150℃ |
| length_width_height | |
| ciss_max_input_capacitance_at_different_vds | - |
| configure | - |
| drain_current | 45A |
| drain_source_resistance | 24mΩ@10V,28mΩ@4.5V |
| drain_source_voltage | 60V |
| fet_type | 1individualNChannel |
| gate_charge | - |
| gate_source_threshold_voltage | 1.8V |
| gate_source_voltage | 20V |
| max_power_dissipation | - |
| number_of_channels | - |
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