Infineon Technologies IRF7335D1 image
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    IRF7335D1

    Part Number: IRF7335D1

    Description: 2W 12V 13nC@ 4.5V @ Q1,18nC@ 4.5V @ Q2 30V 17.5mΩ@ 4.5V @ Q 1,12.8mΩ@ 4.5V @ Q 2mΩ 1.5nF@ 15V @ Q 1,2.3nF@ 15V @ Q 2
    Datasheet:
    Quantity: 309
    Ship Date :
    6-12 working days
    Number:
    - +
    * $3.0709 (Unit Price)
    MOQ 163 Mult 1 SPQ 1
    Ext. Price: $500.55
    Quantity Unit Price
    28
    $3.0709
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    Specifications
    Attribute Value
    cate_name MOSFETs
    rohs
    reference_package
    mounting
    application_level Industrial
    lifecycle
    spm
    operating_temperature -55℃~150℃
    length_width_height
    ciss_max_input_capacitance_at_different_vds 1.5nF@ 15V @ Q 1,2.3nF@ 15V @ Q 2
    configure -
    drain_current -
    drain_source_resistance 17.5mΩ@ 4.5V @ Q 1,12.8mΩ@ 4.5V @ Q 2mΩ
    drain_source_voltage 30V
    fet_type -
    gate_charge 13nC@ 4.5V @ Q1,18nC@ 4.5V @ Q2
    gate_source_threshold_voltage -
    gate_source_voltage 12V
    max_power_dissipation 2W
    number_of_channels -
    Description
    Infineon Technologies IRF7335D1 Overview and Features

    Overview:
    The IRF7335D1 is a high-performance N-channel power MOSFET from Infineon Technologies. This device is designed to deliver exceptional performance in a wide range of applications, including motor control, power supplies, and automotive electronics. With its robust construction and advanced manufacturing processes, the IRF7335D1 ensures reliability and longevity in demanding environments.

    Features:
    1. High Voltage and Current Ratings: The IRF7335D1 is rated for a continuous drain current of 33A and a maximum drain-source voltage of 100V, making it suitable for high-power applications.
    2. Low On-State Resistance: With an RDS(on) of 3.5mΩ (maximum), the MOSFET offers low power dissipation and high efficiency.
    3. Advanced Package: The IRF7335D1 is available in a TO-220 package, which provides excellent thermal performance and ease of integration.
    4. Integrated Diode: The device features an integrated body diode for efficient energy conversion and reduced reverse recovery time.
    5. Logic-Level Gate Drive: It can be driven directly from logic-level signals, simplifying the design and reducing the need for additional components.

    Development Support:
    Infineon Technologies provides comprehensive development support for the IRF7335D1, including:
    - Technical Documentation: Detailed datasheets, application notes, and design guides.
    - Design Tools: Software tools for simulation and circuit design, facilitating the integration of the MOSFET into new projects.
    - Customer Support: Access to technical experts for personalized assistance during the development phase.

    Application Fields:
    The IRF7335D1 is widely used in various applications such as:
    - Motor Drives: Brushless DC (BLDC) and stepper motor control.
    - Power Supplies: Switching regulators and power factor correction circuits.
    - Automotive Electronics: Battery management systems and electric vehicle components.
    - Industrial Controls: Servo drives and variable frequency drives.

    Parameter Introduction:
    - VDS (Drain-Source Voltage): -100V
    - ID (Continuous Drain Current): 33A
    - RDS(on) (Max): 3.5mΩ
    - VGS (Gate-Source Voltage): -4.5V to +20V
    - Qg (Gate Charge): 34nC (typical)
    - Tj (Junction Temperature Range): -55°C to +175°C

    Frequently Asked Questions (FAQs):
    1. Q: What is the maximum power dissipation of the IRF7335D1?
    A: The maximum power dissipation depends on the thermal resistance and the ambient temperature. Refer to the datasheet for specific calculations.

    2. Q: Can the IRF7335D1 be used in high-temperature environments?
    A: Yes, the junction temperature range is from -55°C to +175°C, making it suitable for high-temperature applications.

    3. Q: How can I ensure proper heat dissipation when using the IRF7335D1?
    A: Proper heat dissipation can be ensured by using appropriate heatsinks and thermal interface materials, as well as ensuring good airflow around the component.

    4. Q: Is there an alternative to the IRF7335D1 with higher voltage or current ratings?
    A: Infineon offers a range of power MOSFETs with varying voltage and current ratings. Consult the product catalog for alternatives.

    5. Q: What is the typical application circuit for the IRF7335D1?
    A: The typical application circuits include motor driver circuits, power supply converters, and other high-current switching applications. Refer to the application notes for specific circuit designs.

    This summary provides a comprehensive introduction to the IRF7335D1, highlighting its key features, development support, applications, and technical parameters, along with addressing common questions that may arise during its use.
    Please refer to the product rule book for details.
    Manufacturer Introduction
    Infineon Technologies AG is a leading global semiconductor manufacturer based in Neubiberg, Germany. Founded in 1999 when it was spun off from Siemens AG, the company has established itself as a key player in the semiconductor industry, focusing on the development, manufacture, and marketing of a wide range of semiconductor solutions. Infineon operates through several segments including Automotive, Industrial Power Control, Power Management & Multimarket, and Digital Security Solutions.

    In the Automotive sector, Infineon is at the forefront of innovation, providing high-performance microcontrollers, sensors, and power semiconductors that help advance the development of automotive electronics. These components are crucial for modern automotive applications such as electric and hybrid vehicles, advanced driver-assistance systems (ADAS), and vehicle safety management.

    The Industrial Power Control segment offers products that are essential for the efficient conversion and control of electric power. These include IGBT modules, power MOSFETs, and customized modules that are used in a variety of applications such as wind turbines, photovoltaic inverters, industrial automation, and energy-efficient solutions.

    The Power Management & Multimarket segment focuses on components that manage power in various electronic systems and equipment. This includes a broad portfolio of semiconductors like voltage regulators, MOSFETs, and diodes which are used in applications ranging from mobile devices to industrial robotics.

    Infineon's Digital Security Solutions segment provides a range of security products and solutions designed to meet the needs of applications like smart cards, government identification documents, and IoT security. Infineon is a market leader in providing trusted security solutions that ensure the safety and privacy of data and communications in digital spaces.

    Infineon is committed to innovation and sustainability. It invests heavily in research and development to keep pace with technological advancements and to meet the evolving needs of its customers. The company's approach to sustainability is comprehensive, focusing not only on ecological aspects but also on social and governance factors. Infineon aims to make life easier, safer, and greener, with its semiconductor and system solutions making a contribution to a better future.

    With a global presence, Infineon operates R&D centers and manufacturing facilities around the world, including Europe, Asia, and North America. This international footprint allows Infineon to serve its customers effectively and respond swiftly to the changing demands of the global market.

    Infineon's dedication to quality, reliability, and innovation makes it a trusted partner in the semiconductor industry, helping to shape the digital future with its cutting-edge technologies and solutions. Whether in automotive, industrial power, power management, or digital security, Infineon continues to drive progress and transform how we live and work.
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