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IPP50CN10N G-VB
Other Names: IPP50CN10NG-VB
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IPP50CN10N G-VB
Manufacturer: VBsemi
Part Number: IPP50CN10N G-VB
Description: TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。
NChannel,100V,55A,RDS(ON),36mΩ@10V,38mΩ@4.5V,20Vgs(±V)；2Vth(V) encapsulation：TO220
Has high performance and reliability，Suitable for various power electronic applications。Features Include High Drain-Source voltage and drain current capability，And low threshold voltage and drain-Source Resistance，Suitable for power and driver applications requiring high efficiency and high power。
Datasheet: VBsemi IPP50CN10N G-VB Datasheet (PDF)
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Quantity: 10,000
3-5 working days
Quantity
10
Unit Price
$0.3015
Ext. Price
$3.02
$3.02
MOQ 10 Mult 10 SPQ 1,000 DC 25+
Pricing (USD)
QUANTITY UNIT PRICE EXT PRICE
10
$0.3015
$3.02
1,000
$0.2965
$296.50
2,000
$0.2889
$577.80
Volume discounts available for larger quantities.
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Specifications
| Attribute | Value |
| cate_name | |
| datasheet | |
| rohs | |
| reference_package | TO-220 |
| mounting | Through hole mounting |
| application_level | Industrial |
| lifecycle | On sale |
| spm | |
| operating_temperature | -55℃~150℃ |
| length_width_height | |
| ciss_max_input_capacitance_at_different_vds | - |
| configure | - |
| drain_current | 55A |
| drain_source_resistance | 36mΩ@10V,38mΩ@4.5V |
| drain_source_voltage | 100V |
| fet_type | 1individualNChannel |
| gate_charge | - |
| gate_source_threshold_voltage | 2V |
| gate_source_voltage | 20V |
| max_power_dissipation | - |
| number_of_channels | - |
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