Report Error
Images are for reference only
CEU40N10-VB
Other Names: CEU40N10-VB
Manufacturer: VBsemi
Part Number: CEU40N10-VB
Description: TSMC wafer，JCET (Jiangsu Changjiang Electronics Technology)。
NChannel,100V,40A,RDS(ON),30mΩ@10V,31mΩ@4.5V,20Vgs(±V)；1.8Vth(V) encapsulation：TO252
Transistor has high drain current capacity and low drain-Source Resistance，Very suitable for use as a power switching device in automotive electronic modules。In automotive electronic modules，It can be used for engine control、Electric power steering、Applications such as on-board charging stations，Ensures the stability and performance of automotive systems。
Datasheet:
Quantity: 25,000
3-5 working days
Quantity
25
Unit Price
$0.3231
Ext. Price
$8.08
$8.08
MOQ 25 Mult 25 SPQ 2,500 DC 25+
Pricing (USD)
QUANTITY UNIT PRICE EXT PRICE
25
$0.3231
$8.08
2,500
$0.3177
$794.25
5,000
$0.3096
$1,548.00
Volume discounts available for larger quantities.
Request Quote
Specifications
| Attribute | Value |
| cate_name | |
| rohs | |
| reference_package | TO-252 |
| mounting | SMD mount |
| application_level | Industrial |
| lifecycle | On sale |
| spm | |
| operating_temperature | -55℃~150℃ |
| length_width_height | |
| ciss_max_input_capacitance_at_different_vds | - |
| configure | - |
| drain_current | 40A |
| drain_source_resistance | 30mΩ@10V,31mΩ@4.5V |
| drain_source_voltage | 100V |
| fet_type | 1individualNChannel |
| gate_charge | - |
| gate_source_threshold_voltage | 1.8V |
| gate_source_voltage | 20V |
| max_power_dissipation | - |
| number_of_channels | - |
Alternatives for CEU40N10-VB
You May Also Be Interested In
8 items
Certifications
SSL Encrypted Payment
Copyright © 2026 unikeyic.com | All Rights Reserved 