MT29F4G08ABBDAH4IT:D
Manufacturer: Micron Technology
Part Number: MT29F4G08ABBDAH4IT:D
| Attribute | Value |
| cate_name | Flash Memory |
| rohs | |
| reference_package | BGA |
| mounting | SMD mount |
| application_level | Industrial |
| lifecycle | On sale |
| spm | tray |
| min_operating_temperature | -40℃(TA) |
| max_operating_temperature | 85℃(TA) |
| length_width_height | 11mm*9mm*650μm |
| data_bus_width | - |
| interface_type | Parallel |
| max_clock_frequency | - |
| max_operating_supply_voltage | 1.95V |
| max_supply_current | 20mA |
| min_operating_supply_voltage | 1.7V |
| organization | - |
| storage_capacity | 4Gb (512M x 8) |
Overview:
The Micron Technology MT29F4G08ABBDAH4-IT:D is a high-performance NAND Flash memory device designed to meet the rigorous demands of modern computing and storage applications. With its advanced architecture, this NAND Flash offers high-density storage, fast read and write speeds, and robust data integrity features, making it an ideal choice for a wide range of applications.
Features:
1. High-Density Storage: Offers 4Gb (Gigabit) storage capacity, providing ample space for data-intensive applications.
2. High-Speed Performance: Features fast read and write speeds, enhancing overall system performance.
3. Robust Data Integrity: Incorporates error-correcting code (ECC) to ensure data reliability and integrity.
4. Low Power Consumption: Designed with power efficiency in mind, suitable for battery-powered devices.
5. Wide Operating Temperature Range: Capable of functioning in a wide range of temperatures, enhancing its reliability in various environments.
Development Support:
Micron Technology provides comprehensive development support for the MT29F4G08ABBDAH4-IT:D, including:
- Technical Documentation: Detailed datasheets, application notes, and design guides.
- Software Tools: Firmware and software development kits to facilitate integration and testing.
- Technical Support: Access to Micron's team of experts for guidance and troubleshooting.
Application Fields:
The MT29F4G08ABBDAH4-IT:D is suitable for various applications, including:
- Enterprise Storage: For data centers and cloud storage solutions.
- Consumer Electronics: In smartphones, tablets, and other portable devices.
- Industrial Automation: For reliable data storage in automated systems.
- Automotive Systems: For infotainment and navigation systems in vehicles.
Parameter Introduction:
- Memory Type: NAND Flash
- Capacity: 4Gb
- Interface: IT (Inter-Integrated Circuit)
- Data Rate: Varies depending on the system configuration
- Voltage Range: Typically 1.8V to 3.6V
- Operating Temperature: -40°C to 85°C (or wider range for industrial grade)
Frequently Asked Questions (FAQs):
1. Q: What is the typical use case for the MT29F4G08ABBDAH4-IT:D?
A: It is typically used in applications requiring high-density storage with fast access times and robust data integrity.
2. Q: Does this NAND Flash support wear leveling?
A: Yes, wear leveling is supported to ensure even wear across the memory cells, prolonging the device's lifespan.
3. Q: How does the ECC feature benefit the device?
A: The error-correcting code feature helps detect and correct common data corruption issues, ensuring the reliability of stored data.
4. Q: Is this NAND Flash memory suitable for use in harsh environments?
A: Yes, with a wide operating temperature range, it is suitable for environments with extreme temperature fluctuations.
5. Q: Can I use this device in a custom design?
A: Yes, with the provided development support and documentation, you can integrate the MT29F4G08ABBDAH4-IT:D into a custom design.
6. Q: What kind of warranty does Micron offer for this NAND Flash?
A: Micron typically offers a limited warranty for its products, with specific terms available in the product documentation or upon request.
7. Q: How can I get started with development using this NAND Flash?
A: Begin by reviewing the technical documentation, accessing the software tools, and reaching out to Micron's technical support for guidance.
8. Q: Is there any specific hardware requirement for using this NAND Flash?
A: Ensure that your system's voltage and interface specifications are compatible with the MT29F4G08ABBDAH4-IT:D's requirements.
9. Q: Can this NAND Flash be used in write-intensive applications?
A: Yes, it is designed to handle write-intensive applications, but consider the overall system design to manage write cycles effectively.
10. Q: How do I know if this NAND Flash is the right fit for my project?
A: Evaluate your project's storage capacity, speed, and reliability requirements, and compare them with the specifications and features of the MT29F4G08ABBDAH4-IT:D.
For more detailed information or specific inquiries, it is recommended to consult the official Micron Technology datasheets and support resources.
Please refer to the product rule book for details.
Micron's memory solutions are critical components in a wide range of electronic devices and systems, including computers, servers, smartphones, and automotive applications. The company's DRAM products are essential for high-speed data processing in computing environments, while its NAND flash memory is used primarily for data storage in mobile devices and solid-state drives (SSDs). Micron's NOR flash products provide high-speed random access memory for code storage in a variety of electronics.
Over the years, Micron has made significant investments in research and development to stay at the forefront of technology innovation. The company operates state-of-the-art fabrication facilities and has a strong focus on developing next-generation memory technologies that are smaller, faster, and more energy-efficient. Micron's commitment to innovation is underscored by its extensive patent portfolio, which includes thousands of patents related to memory and storage technologies.
Micron is also committed to sustainability and social responsibility. The company implements environmentally responsible manufacturing practices and actively works to reduce its carbon footprint across its global operations. Additionally, Micron supports various educational and community initiatives around the world, aiming to enhance educational opportunities and improve community well-being.
The company's strategic acquisitions and partnerships have been pivotal in its growth and expansion. Notable acquisitions include Elpida Memory and Rexchip, which significantly enhanced Micron's market position in the DRAM sector. Partnerships with other industry leaders have enabled Micron to integrate its memory solutions into a broader range of products and markets, further solidifying its position as a critical player in the global semiconductor industry.
As the demand for advanced memory solutions continues to grow, driven by trends like big data, the Internet of Things (IoT), and artificial intelligence (AI), Micron is well-positioned to continue its role as a key supplier of innovative memory technologies. The company's dedication to technological advancement, combined with its strategic business initiatives, ensures that Micron Technology remains at the cutting edge of the semiconductor industry, ready to meet the challenges of the future.
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