BFR193L3E6327
Manufacturer: Infineon Technologies
Part Number: BFR193L3E6327
| Attribute | Value |
| cate_name | Bipolar Transistors (BJT) |
| Datasheet | BFR193L3E6327 Infineon Technologies |
| rohs | |
| reference_package | SOT-23 |
| mounting | SMD mount，glue mount |
| application_level | Industrial |
| lifecycle | |
| spm | Tape & Reel |
| operating_temperature | -55℃~150℃ |
| length_width_height | 2.9mm*1.3mm*1mm |
| collector_current | 80mA |
| collector_emitter_voltage_max | 12V |
| configure | Freestanding |
| max_collector_base_voltage | 20V |
| max_collector_cut_off_current | 100nA |
| max_collector_emitter_saturation_voltage | - |
| max_emitter_base_voltage | 2V |
| max_power_dissipation | 580mW |
| transistor_type | Bipolar |
| vce_max_saturation_value_at_different_ib_ic | - |
Overview:
The Infineon Technologies BFR193L3E6327 is a high-performance N-channel enhancement mode field-effect transistor (MOSFET) designed for a wide range of applications, including power electronics, automotive, and industrial systems. With its advanced features and robust performance, this MOSFET offers superior electrical characteristics and reliability.
Features:
1. N-channel enhancement mode MOSFET
2. High voltage and current handling capabilities
3. Low on-state resistance for improved efficiency
4. Fast switching speeds for reduced switching losses
5. High thermal stability and robustness
6. Suitable for various power electronic applications
Development Support:
Infineon Technologies provides comprehensive development support for the BFR193L3E6327, including:
1. Technical documentation and datasheets
2. Design guides and application notes
3. Simulation models for circuit design
4. Development kits and evaluation boards
5. Technical support and customer service
Application Areas:
The BFR193L3E6327 is suitable for a wide range of applications, including:
1. Power supplies and converters
2. Motor drives and control systems
3. Automotive electronics and power management
4. Industrial automation and control systems
5. Renewable energy systems and power management
Parameter Introduction:
Key parameters of the BFR193L3E6327 include:
1. VDS (drain-source voltage): 30V
2. ID (continuous drain current): 90A
3. RDS(on) (on-state drain-source resistance): 3.5mΩ max
4. Qg (gate charge): 37nC max
5. VGS (gate-source voltage): -4V to +20V
6. Operating temperature range: -55°C to +175°C
FAQs:
1. Q: What is the main advantage of using the BFR193L3E6327 MOSFET?
A: The main advantage is its high performance, including high voltage and current handling capabilities, low on-state resistance, and fast switching speeds, making it suitable for various power electronic applications.
2. Q: Can the BFR193L3E6327 be used in automotive applications?
A: Yes, the BFR193L3E6327 is suitable for automotive electronics and power management applications due to its high thermal stability and robustness.
3. Q: What is the maximum operating temperature for the BFR193L3E6327?
A: The maximum operating temperature is +175°C.
4. Q: Does Infineon Technologies provide development support for the BFR193L3E6327?
A: Yes, Infineon Technologies offers comprehensive development support, including technical documentation, design guides, simulation models, development kits, and technical support.
5. Q: What are some common applications for the BFR193L3E6327?
A: Common applications include power supplies and converters, motor drives and control systems, automotive electronics, industrial automation, and renewable energy systems.
Please refer to the product rule book for details.
In the Automotive sector, Infineon is at the forefront of innovation, providing high-performance microcontrollers, sensors, and power semiconductors that help advance the development of automotive electronics. These components are crucial for modern automotive applications such as electric and hybrid vehicles, advanced driver-assistance systems (ADAS), and vehicle safety management.
The Industrial Power Control segment offers products that are essential for the efficient conversion and control of electric power. These include IGBT modules, power MOSFETs, and customized modules that are used in a variety of applications such as wind turbines, photovoltaic inverters, industrial automation, and energy-efficient solutions.
The Power Management & Multimarket segment focuses on components that manage power in various electronic systems and equipment. This includes a broad portfolio of semiconductors like voltage regulators, MOSFETs, and diodes which are used in applications ranging from mobile devices to industrial robotics.
Infineon's Digital Security Solutions segment provides a range of security products and solutions designed to meet the needs of applications like smart cards, government identification documents, and IoT security. Infineon is a market leader in providing trusted security solutions that ensure the safety and privacy of data and communications in digital spaces.
Infineon is committed to innovation and sustainability. It invests heavily in research and development to keep pace with technological advancements and to meet the evolving needs of its customers. The company's approach to sustainability is comprehensive, focusing not only on ecological aspects but also on social and governance factors. Infineon aims to make life easier, safer, and greener, with its semiconductor and system solutions making a contribution to a better future.
With a global presence, Infineon operates R&D centers and manufacturing facilities around the world, including Europe, Asia, and North America. This international footprint allows Infineon to serve its customers effectively and respond swiftly to the changing demands of the global market.
Infineon's dedication to quality, reliability, and innovation makes it a trusted partner in the semiconductor industry, helping to shape the digital future with its cutting-edge technologies and solutions. Whether in automotive, industrial power, power management, or digital security, Infineon continues to drive progress and transform how we live and work.
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