SUPSiC

encapsulation: TO247-3 : SUPSiC MOSFET Silicon carbide field effect tube Package type: Single tube : 1individualNChannel Vds-: 1200V Id-(25℃): 32A : Silicon carbide field effect tube(MOSFET) : C7435045 : 16-15

GAQV278AEH 1 Form A(SPST-NO) load_voltage:1800V :45mA

Package type: Single tube : 1individualNChannel Vds-: 1200V Id-(25℃): 63A

GAQV215G1EH 1 Form A(SPST-NO) load_voltage:100V :1.1A

（Qc）:54nC (Ptot):187W

encapsulation: TO247-3 : SUPSiC MOSFET Silicon carbide field effect tube Package type: Single tube : 1individualNChannel Vds-: 1700V Id-(25℃): 5A