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SiC MOSFETs

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IMBG65R072M1HXTMA1
Infineon Technologies
Infineon NChannelMOSTube, Vds=650 V, 33 A, TO-263-7encapsulation, surface mount, 7Pin
Quantity: 2000
Ship Date: 6-13 working days
1000+ $4.3663
3000+ $4.3313
10000+ $4.2964
- +
x $4.3663
Ext. Price: $4366.30
MOQ: 1000
Mult: 1000
SPQ: 1000
IMBG120R090M1HXTMA1
Infineon Technologies
23nC@ 18 V 136W(Tc) 763pF@800V 125mΩ@ 8.5A,18V 26A 1.2KV 5.7V@3.7mA 1individualNChannel TO-263 SMD mount
Quantity: 1000
Ship Date: 6-13 working days
1000+ $4.88
3000+ $4.841
10000+ $4.8019
- +
x $4.88
Ext. Price: $4880.00
MOQ: 1000
Mult: 1000
SPQ: 1000
IMZA65R020M2HXKSA1
Infineon Technologies
57nC@ 18 V 273W(Tc) 2.038nF@400V 83A 650V 1individualNChannel Through hole mounting
Quantity: 266
Ship Date: 3-12 working days
1+ $12.5083
5+ $12.008
10+ $11.0073
50+ $11.0073
100+ $10.8072
250+ $10.8072
- +
x $12.5083
Ext. Price: $12.50
MOQ: 1
Mult: 1
IMW120R220M1HXKSA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube IMW1series, Vds=1200 V, 13 A, TO-247encapsulation, Through hole mounting, 3Pin
Quantity: 240
In Stock
25+
1+ $5.8855
10+ $5.2548
600+ $5.1121
- +
x $5.8855
Ext. Price: $5.88
MOQ: 1
Mult: 1
SPQ: 240
IMBG120R030M1HXTMA1
Infineon Technologies
63nC@ 18 V 300W(Tc) 2.29nF@800V 41mΩ@ 25A,18V 56A 1.2KV 5.7V@11.5mA 18V 1individualNChannel TO-263 SMD mount
Quantity: 8000
In Stock
1000+ $14.8696
- +
x $14.8696
Ext. Price: $14869.60
MOQ: 1000
Mult: 1000
SPQ: 1000
FF11MR12W1M1B70BPSA1
Infineon Technologies
Infineon NChannelMOSFETmodule FF11MR12W1M1series, Vds=1200 V, 100 A, AG-EASY1Bencapsulation, threaded
Quantity: 20
Ship Date: 9-13 working days
20+
1+ $176.1837
25+ $168.9034
50+ $161.6231
100+ $158.711
300+ $157.2549
500+ $155.7988
1000+ $151.4306
5000+ $151.4306
- +
x $176.1837
Ext. Price: $176.18
MOQ: 1
Mult: 1
SPQ: 1
IMBG65R163M1HXTMA1
Infineon Technologies
Infineon NChannelMOSTube, Vds=650 V, 17 A, TO-263-7encapsulation, surface mount, 7Pin
Quantity: 1000
Ship Date: 6-13 working days
1000+ $2.6513
3000+ $2.63
10000+ $2.6088
- +
x $2.6513
Ext. Price: $2651.30
MOQ: 1000
Mult: 1000
SPQ: 1000
IMW120R014M1HXKSA1
Infineon Technologies
NChannelMOSTube, Vds=1200 V, 127 A, TO-247encapsulation, Through hole mounting, 3Pin
Quantity: 240
Ship Date: 6-13 working days
240+ $23.2813
720+ $23.095
2400+ $22.9088
- +
x $23.2813
Ext. Price: $5587.51
MOQ: 240
Mult: 240
SPQ: 240
FF17MR12W1M1HB70BPSA1
Infineon Technologies
50A 1.2KV 1individualNChannel AG-EASY1B base mount
Quantity: 24
Ship Date: 6-13 working days
24+ $92.3438
72+ $91.605
240+ $90.8662
- +
x $92.3438
Ext. Price: $2216.25
MOQ: 24
Mult: 24
SPQ: 24
DF8MR12W1M1HFB67BPSA1
Infineon Technologies
149nC@ 18V 4.4nF@800V 20mW 16.2mΩ@ 50A,18V 50A 1.2KV 5.15V@20mA 1individualNChannel AG-EASY1B base mount
Quantity: 24
Ship Date: 6-13 working days
24+ $108.4363
72+ $107.5688
240+ $106.7013
- +
x $108.4363
Ext. Price: $2602.47
MOQ: 24
Mult: 24
SPQ: 24
IMBG120R234M2HXTMA1
Infineon Technologies
8.1A 1.2KV 1individualNChannel SMD mount
Quantity: 2000
Ship Date: 6-13 working days
1000+ $2.5638
3000+ $2.5432
10000+ $2.5227
- +
x $2.5638
Ext. Price: $2563.80
MOQ: 1000
Mult: 1000
SPQ: 1000
IMYH200R100M1HXKSA1
Infineon Technologies
26A 2KV 1individualNChannel Through hole mounting
Quantity: 240
Ship Date: 10-15 working days
1+ $32.6168
10+ $28.8457
100+ $25.8824
- +
x $32.6168
Ext. Price: $97.85
MOQ: 3
Mult: 1
FF6MR12W2M1PB11BPSA1
Infineon Technologies
496nC@ 15V 14.7nF@800V 20mW(Tc) 5.63mΩ@ 200A,15V 1.2KV 5.55V@80mA 2individualNChannel base mount
Quantity: 12
Ship Date: 9-13 working days
21+
1+ $293.2577
25+ $281.1396
50+ $269.0215
100+ $264.1743
300+ $261.7506
500+ $259.327
1000+ $252.0562
5000+ $252.0562
- +
x $293.2577
Ext. Price: $293.25
MOQ: 1
Mult: 1
SPQ: 1
IMZ120R090M1H
Infineon Technologies
Quantity: 813
Ship Date: 5-7 working days
22+
10+ $4.4175
200+ $4.3468
1000+ $4.2408
5000+ $4.1701
- +
x $4.4175
Ext. Price: $44.17
MOQ: 10
Mult: 1
SPQ: 240
AIMDQ75R016M1HXUMA1
Infineon Technologies
80nC@ 18 V 384W(Tc) 2.869nF@500V 750V 22mΩ@ 41.5A,18V 98A 750V 5.6V@14.9mA 1individualNChannel SMD mount
Quantity: 223
Ship Date: 3-12 working days
1+ $18.4364
5+ $16.519
10+ $16.2241
50+ $15.9291
100+ $15.9291
250+ $15.9291
- +
x $18.4364
Ext. Price: $18.43
MOQ: 1
Mult: 1
IMBG40R036M2HXTMA1
Infineon Technologies
26nC@ 18 V 3.8W(Ta),167W(Tc) 1.17nF@200V 45.7mΩ@ 11.1A,18V 400V 5.6V@4mA 1individualNChannel SMD mount
Quantity: 970
Ship Date: 3-12 working days
1+ $5.2877
10+ $4.6531
100+ $4.5685
500+ $4.5685
1000+ $4.5685
- +
x $5.2877
Ext. Price: $10.57
MOQ: 2
Mult: 1
FF8MR12W1M1HS4PB11BPSA1
Infineon Technologies
297nC@ 18V 8.8nF@800V 20mW 8.1mΩ@ 100A,18V 1.2KV 5.15V@40mA AG-EASY1B base mount
Quantity: 10
Ship Date: 9-13 working days
23+
1+ $88.4716
25+ $84.8157
50+ $81.1599
100+ $79.6976
300+ $78.9664
500+ $78.2352
1000+ $76.0417
5000+ $76.0417
- +
x $88.4716
Ext. Price: $176.94
MOQ: 2
Mult: 1
SPQ: 1
FF11MR12W1M1_B11
Infineon Technologies
248nC@ 15V 20mW 7.36nF@ 800V 11.3mΩ(Typ) @ 15V 1.2KV 20V
Quantity: 143
Ship Date: 3-5 working days
22+
24+ $161.9171
- +
x $161.9171
Ext. Price: $3886.01
MOQ: 24
Mult: 24
SPQ: 24
FS03MR12A6MA1BBPSA1
Infineon Technologies
Infineon N/PChannelMOSFETmodule, Vds=1200 V, 400 A, AG-HYBRIDD-2encapsulation, threaded
Quantity: 9
Ship Date: 6-12 working days
1+ $2280.9185
- +
x $2280.9185
Ext. Price: $2280.91
MOQ: 1
Mult: 1
AIMDQ75R025M2HXTMA1
Infineon Technologies
AIMDQ75R025M2HXTMA1
Quantity: 130
Ship Date: 7-12 working days
1+ $13.2912
10+ $9.2716
100+ $8.0689
- +
x $13.2912
Ext. Price: $13.29
MOQ: 1
Mult: 1
SPQ: 1
IMZA75R060M1HXKSA1
Infineon Technologies
23nC@ 18 V 144W(Tc) 779pF@500V 55mΩ@ 11.1A,20V 32A 750V 5.6V@4mA 1individualNChannel Through hole mounting
Quantity: 159
Ship Date: 3-12 working days
1+ $6.3679
5+ $6.123
10+ $5.4862
50+ $5.3882
100+ $5.3882
250+ $5.3882
- +
x $6.3679
Ext. Price: $12.73
MOQ: 2
Mult: 1
AIMZA75R040M1HXKSA1
Infineon Technologies
34nC@ 18 V 185W(Tc) 1.135nF@500V 37mΩ@ 16.6A,20V 47A 750V 5.6V@6mA 1individualNChannel Through hole mounting
Quantity: 162
Ship Date: 3-12 working days
1+ $8.216
5+ $8.216
10+ $7.3616
50+ $7.2301
100+ $7.0987
250+ $7.0987
- +
x $8.216
Ext. Price: $16.43
MOQ: 2
Mult: 1
DF11MR12W1M1PB11BPSA1
Infineon Technologies
124nC@ 15V 3.68nF@800V 20mW 22.5mΩ@ 50A,15V 50A 1.2KV 5.55V@20mA AG-EASY1B-2 base mount
Quantity: 2
Ship Date: 14-16 working days
1+ $159.9093
100+ $127.5365
- +
x $159.9093
Ext. Price: $159.90
MOQ: 1
Mult: 1
DF23MR12W1M1B11BPSA1
Infineon Technologies
62nC@ 15V 1.84nF@800V 20mW 45mΩ@ 25A,15V(Typ) 25A 1.2KV 5.55V@10mA 10V,20V double 2individualNChannel AG-EASY1BM-2 base mount
Quantity: 24
Ship Date: 14-16 working days
1+ $107.5479
100+ $101.3992
500+ $95.641
- +
x $107.5479
Ext. Price: $107.54
MOQ: 1
Mult: 1
IMZA65R048M1HXKSA1
Infineon Technologies
Infineon NChannel EnhancedMOSTube CoolSiCseries, Vds=650 V, 39 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Quantity: 204
Ship Date: 7-13 working days
30+ $6.4872
150+ $5.96
- +
x $6.4872
Ext. Price: $194.61
MOQ: 30
Mult: 30

SiC MOSFETs

Sic mos is a Latin phrase that translates to "just as it is" or "thus and so." It is often used in legal documents, historical texts, and scholarly works to indicate that a quoted text is being reproduced exactly as it appears in the original source, including any errors or peculiarities.

Definition:
"Sic" is a Latin term used to acknowledge a mistake or unusual usage in a quoted text, indicating that the error is not the fault of the person quoting but is present in the original source.

Function:
The primary function of "sic mos" is to maintain the integrity of the original text. It serves as a disclaimer, informing the reader that any errors, archaic spellings, or unusual phrasings are not the result of a mistake by the person quoting the text but are instead a faithful reproduction of the original.

Applications:
1. Legal Documents: In legal contexts, "sic" is used to ensure that the exact wording of a document is preserved, even if it contains errors.
2. Historical Texts: Historians use "sic" to reproduce historical documents accurately, preserving the original language and any errors that might provide insight into the time period.
3. Scholarly Works: Scholars use "sic" in their research to show that they are presenting a source as it was written, without altering the text to correct perceived mistakes.

Selection Criteria:
When deciding to use "sic mos," consider the following:
1. Accuracy: Ensure that the quoted text is an exact match to the original.
2. Clarity: Use "sic" to clarify that any errors are not your own but are present in the source material.
3. Context: Consider whether the error in the original text is significant enough to warrant its inclusion or if it might confuse the reader.
4. Purpose: Determine if the inclusion of the error is necessary for the understanding of the text or if it serves a specific analytical purpose.

In summary, "sic mos" is a tool used to maintain the authenticity of quoted material, ensuring that any peculiarities are attributed to the original source rather than the person quoting it. It is a critical component in maintaining the integrity of historical, legal, and scholarly texts.
Please refer to the product rule book for details.