Discrete IGBTs

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CRG75T65AK5HD
CR Micro
468W 2.2V 650V 75A TO-247
Quantity: 10000
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1000+ $0.9569
2000+ $0.937
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CRG75T65BK5SD
CR Micro
encapsulation:TO-247
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CRG60T60AK3HD
CR Micro
483W 1.85V 600V 60A TO-247-3
Quantity: 770
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CRG75T60AK3SD
CR Micro
Quantity: 10000
Ship Date: 5-8 working days
1000+ $1.2186
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CRG40T60AN3H
CR Micro
280W 1.9V 600V 40A
Quantity: 77
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1+ $0.6531
100+ $0.5442
1250+ $0.494
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CRG40T120BK3SD
CR Micro
Quantity: 10000
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1000+ $0.8809
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CRG40T65AK5HD
CR Micro
Quantity: 1025
Ship Date: 5-10 working days
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10000+ $0.7547
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Ext. Price: $778.10
MOQ: 1000
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CRG40T120AK3SD
CR Micro
333W 1.9V 1.2KV 40A TO-247-3
Quantity: 20000
In Stock
23+
1000+ $0.9544
2000+ $0.9345
3000+ $0.9158
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CRG40T60AK3SD
CR Micro
Quantity: 1368
In Stock
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1000+ $0.5554
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Ext. Price: $7.24
MOQ: 10
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SPQ: 1000
CRG40T65AK5SD
CR Micro
encapsulation:TO-247
Quantity: 10000
In Stock
300+ $0.6167
600+ $0.5968
900+ $0.5869
- +
x $0.6167
Ext. Price: $185.01
MOQ: 300
Mult: 300
SPQ: 300
CRG75T60AK3HD
CR Micro
390W 600V 75A TO-247-3
Quantity: 19
In Stock
22+
1+ $1.6793
10+ $1.4706
30+ $1.226
100+ $1.1804
300+ $1.1358
1000+ $1.0869
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x $1.6793
Ext. Price: $1.67
MOQ: 1
Mult: 1
SPQ: 2000
CRG60T60AN3H
CR Micro
403W 600V 60A TO-3P-3
Quantity: 10000
Ship Date: 7-12 working days
1000+ $0.8722
2000+ $0.8548
3000+ $0.8373
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x $0.8722
Ext. Price: $872.20
MOQ: 1000
Mult: 1000
SPQ: 1000
CRG75T65AK5SD
CR Micro
Quantity: 20000
Ship Date: 5-8 working days
2000+ $1.0616
4000+ $1.0442
6000+ $1.018
- +
x $1.0616
Ext. Price: $2123.19
MOQ: 2000
Mult: 2000
SPQ: 2000

Discrete IGBTs

Definition:
An IGBT (Insulated Gate Bipolar Transistor) module is a high-power semiconductor device that combines the features of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a bipolar junction transistor (BJT). It is designed to provide efficient power control in various electronic systems.

Function:
The IGBT module functions as a voltage-controlled switch, allowing for the control of high currents and voltages with low input power. It is particularly useful in applications requiring fast switching and high efficiency. The IGBT operates by using an insulated gate to control the flow of current between its collector and emitter terminals, with the current being primarily carried by electrons and holes.

Applications:
IGBT modules are widely used in various industries due to their ability to handle high power levels with high efficiency and fast switching speeds. Some common applications include:
1. Electric vehicles (EVs) for motor control.
2. Renewable energy systems such as solar inverters and wind turbines.
3. Industrial motor drives for variable frequency drives (VFDs).
4. Power supplies for high-power electronics.
5. Rail transportation systems for traction control.
6. High-voltage direct current (HVDC) transmission systems.

Selection Criteria:
When selecting an IGBT module, the following criteria should be considered:
1. Voltage Rating: Ensure the module can handle the maximum voltage of the application.
2. Current Rating: Choose a module that can handle the expected current load.
3. Switching Speed: Consider the required switching speed for the application.
4. Thermal Characteristics: The module should have adequate thermal management capabilities.
5. Package Type: Depending on the application, different package types may be more suitable (e.g., press-pack, module, or smart module).
6. Reliability and Durability: Look for modules with proven reliability and a long service life.
7. Cost: Balance the cost of the module with its performance and reliability.
8. Manufacturer Support: Consider the support and availability of technical assistance from the manufacturer.

In summary, IGBT modules are essential components in modern power electronics, offering a combination of high efficiency, fast switching, and the ability to handle high power levels. Their selection should be based on a thorough understanding of the application requirements and the specific characteristics of the IGBT modules available on the market.
Please refer to the product rule book for details.