Home > Catalogue > Diodes, Transistors & Thyristors > Bipolar Transistors (BJT)> MSKSEMI

Bipolar Transistors (BJT)

Results:
Bipolar Transistors (BJT) Results:
Filter Results: -1/187
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
MMBTA94-MS
MSKSEMI
PNP 100nA 200mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0184
15000+ $0.0181
- +
x $0.0184
Ext. Price: $55.20
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT2222A-MS
MSKSEMI
NPN 600mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0059
15000+ $0.0058
- +
x $0.0059
Ext. Price: $17.70
MOQ: 3000
Mult: 3000
SPQ: 3000
BC846C
MSKSEMI
NPN 100nA 100mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0046
15000+ $0.0045
- +
x $0.0046
Ext. Price: $13.80
MOQ: 3000
Mult: 3000
SPQ: 3000
BC817-40
MSKSEMI
700mV@ 50mA,500mA NPN 300mW 5V 100nA 50V 45V 500mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0053
15000+ $0.0051
- +
x $0.0053
Ext. Price: $15.90
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT3906
MSKSEMI
-0.3V@ -5mA,-50mA PNP 200mW -5V 100nA -40V 40V 200mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0033
15000+ $0.0032
- +
x $0.0033
Ext. Price: $9.90
MOQ: 3000
Mult: 3000
SPQ: 3000
MMDT4401
MSKSEMI
NPN 100nA 600mA SOT-363
Quantity: 3000
In Stock
24+
3000+ $0.0127
15000+ $0.0123
- +
x $0.0127
Ext. Price: $38.10
MOQ: 3000
Mult: 3000
SPQ: 3000
MMST5401
MSKSEMI
encapsulation:SOT-323 transistor_type:PNPCollector-emitter breakdown voltage(Vceo):150Vcollector_current(Ic):600mApower(Pd):200mW
Quantity: 3000
In Stock
24+
3000+ $0.0086
15000+ $0.0083
- +
x $0.0086
Ext. Price: $25.80
MOQ: 3000
Mult: 3000
SPQ: 3000
FMMT619
MSKSEMI
220mV@ 2A,100mA NPN 350mW 5V 100nA 50V 50V 2A SOT-23
Quantity: 4846
In Stock
23+
5+ $0.0304
50+ $0.0273
150+ $0.0242
500+ $0.02
3000+ $0.0182
18000+ $0.0169
- +
x $0.0304
Ext. Price: $0.15
MOQ: 5
Mult: 1
SPQ: 3000
S9015
MSKSEMI
-0.3V@ -10mA,-100mA PNP 200mW -5V 100nA -50V 45V 100mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0046
15000+ $0.0045
- +
x $0.0046
Ext. Price: $13.80
MOQ: 3000
Mult: 3000
SPQ: 3000
2SD1164 DAR
MSKSEMI
NPN 1A SOT-89
Quantity: 1000
In Stock
24+
1000+ $0.0191
5000+ $0.0187
- +
x $0.0191
Ext. Price: $19.10
MOQ: 1000
Mult: 1000
SPQ: 1000
BCX56(MS)
MSKSEMI
encapsulation:SOT-89 :80VCurrent:1ANPNhfe=63~250transistor_type:NPNcollector_current(Ic):1ACollector-emitter breakdown voltage(Vceo):80Vpower(Pd):500mW(hFE@Ic,Vce):63@150mA,2Vhfe=63~250
Quantity: 1000
In Stock
24+
1000+ $0.0184
5000+ $0.0181
- +
x $0.0184
Ext. Price: $18.39
MOQ: 1000
Mult: 1000
SPQ: 1000
BC847S
MSKSEMI
600mV@ 100mA,5mA NPN 250mW 6V 15nA 50V 45V 100mA SOT-363 SMD mount
Quantity: 5312
In Stock
24+
100+ $0.0181
1000+ $0.0161
3000+ $0.0143
10000+ $0.0119
60000+ $0.0108
100000+ $0.01
- +
x $0.0181
Ext. Price: $1.81
MOQ: 100
Mult: 1
SPQ: 3000
DTC124EE-MS
MSKSEMI
encapsulation:SOT-523
Quantity: 3000
In Stock
24+
3000+ $0.0079
15000+ $0.0077
- +
x $0.0079
Ext. Price: $23.70
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT3906M
MSKSEMI
PNP 200mA SOT-723
Quantity: 8000
In Stock
24+
8000+ $0.0083
40000+ $0.0081
- +
x $0.0083
Ext. Price: $66.40
MOQ: 8000
Mult: 8000
SPQ: 8000
KTC3875-Y
MSKSEMI
encapsulation:SOT-23 transistor_type:NPNCollector-emitter breakdown voltage(Vceo):50Vcollector_current(Ic):150mApower(Pd):150mWY(120~240)ALY
Quantity: 3000
In Stock
24+
3000+ $0.004
15000+ $0.0039
- +
x $0.004
Ext. Price: $12.00
MOQ: 3000
Mult: 3000
SPQ: 3000
A733-MS
MSKSEMI
PNP 150mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0046
15000+ $0.0045
- +
x $0.0046
Ext. Price: $13.80
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBTA92
MSKSEMI
-0.2V@ -2mA,-20mA PNP 300mW -5V 250nA -300V 300V 200mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0105
15000+ $0.0104
- +
x $0.0105
Ext. Price: $31.50
MOQ: 3000
Mult: 3000
SPQ: 3000
S8050
MSKSEMI
600mV@ 50mA,500mA NPN 300mW 5V 100nA 40V 25V 500mA SOT-23
Quantity: 3000
In Stock
24+
3000+ $0.0033
15000+ $0.0032
- +
x $0.0033
Ext. Price: $9.90
MOQ: 3000
Mult: 3000
SPQ: 3000
BC846BW
MSKSEMI
600mV@ 5mA,100mA NPN 150mW 6V 15nA 80V 65V 100mA SOT-323
Quantity: 2314
In Stock
24+
100+ $0.009
1000+ $0.0081
3000+ $0.0072
10000+ $0.0059
60000+ $0.0054
100000+ $0.005
- +
x $0.009
Ext. Price: $0.90
MOQ: 100
Mult: 1
SPQ: 3000
BCX56-16(MS)
MSKSEMI
encapsulation:SOT-89 :80VCurrent:1ANPNtransistor_type:NPNcollector_current(Ic):1ACollector-emitter breakdown voltage(Vceo):80Vpower(Pd):500mW(hFE@Ic,Vce):250@150mA,2V,hfe=100~250
Quantity: 1000
In Stock
24+
1000+ $0.0197
5000+ $0.0194
- +
x $0.0197
Ext. Price: $19.70
MOQ: 1000
Mult: 1000
SPQ: 1000
BCP56-16
MSKSEMI
500mV@ 50mA,500mA NPN 1.5W 5V 100nA 100V 80V 1A SOT-223
Quantity: 979
In Stock
24+
5+ $0.04
50+ $0.0358
150+ $0.0318
500+ $0.0263
1000+ $0.024
6000+ $0.0222
- +
x $0.04
Ext. Price: $0.20
MOQ: 5
Mult: 1
SPQ: 1000
BC817-40W
MSKSEMI
700mV@ 50mA,500mA NPN 200mW 5V 100nA 50V 45V 500mA SOT-323
Quantity: 3000
In Stock
24+
3000+ $0.0064
15000+ $0.0062
- +
x $0.0064
Ext. Price: $19.20
MOQ: 3000
Mult: 3000
SPQ: 3000
BCX54(MS)
MSKSEMI
encapsulation:SOT-89 :45VCurrent:1ANPNtransistor_type:NPNcollector_current(Ic):1ACollector-emitter breakdown voltage(Vceo):45Vpower(Pd):1.3W(hFE@Ic,Vce):25@5mA,2Vhfe=63~250
Quantity: 1000
In Stock
24+
1000+ $0.0178
5000+ $0.0174
- +
x $0.0178
Ext. Price: $17.80
MOQ: 1000
Mult: 1000
SPQ: 1000
MJD122(MS)
MSKSEMI
encapsulation:TO-252 MJD122,type:NPNtype,Collector-emitter breakdown voltage(Vceo):100V,collector_current(Ic):8A,TO-252(DPAK),MJD122,、、LEDdrive、。
Quantity: 2500
In Stock
24+
2500+ $0.0665
12500+ $0.0645
- +
x $0.0665
Ext. Price: $166.25
MOQ: 2500
Mult: 2500
SPQ: 2500
ULN2003
MSKSEMI
1V 7NPN 30V 50V 500mA SOP-16
Quantity: 845
In Stock
23+
5+ $0.0631
50+ $0.0565
150+ $0.0501
500+ $0.0414
2500+ $0.0379
15000+ $0.035
- +
x $0.0631
Ext. Price: $0.31
MOQ: 5
Mult: 1
SPQ: 2500

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.