Home > Catalogue > Diodes, Transistors & Thyristors > Bipolar Transistors (BJT)> MDD

Bipolar Transistors (BJT)

Results:
Bipolar Transistors (BJT) Results:
Filter Results: -1/32
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
S8550-2TY
MDD
600mV PNP 100nA 40V 500mA SOT-23 SMD mount
Quantity: 10848
In Stock
2443+
50+ $0.0062
500+ $0.005
1000+ $0.0042
3000+ $0.0037
9000+ $0.0034
- +
x $0.0062
Ext. Price: $0.31
MOQ: 50
Mult: 50
SPQ: 3000
MMBTA42
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO300V 300mA 350mW (BJT) NPN IC()=300mA PD(max_power)=350mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0096
90000+ $0.0095
135000+ $0.0093
- +
x $0.0096
Ext. Price: $432.00
MOQ: 45000
Mult: 45000
SPQ: 3000
MMBT2907A
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-60 -600mA 350mW (BJT) PNP IC()=-600mA PD(max_power)=350mWapplication:、、、
Quantity: 30000
In Stock
3000+ $0.0064
6000+ $0.0063
9000+ $0.0061
- +
x $0.0064
Ext. Price: $19.20
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT4401
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 600mA 225mW (BJT) NPN IC()=600mA PD(max_power)=225mWapplication:、、、
Quantity: 3000
In Stock
24+
3000+ $0.0054
9000+ $0.0052
126000+ $0.005
- +
x $0.0054
Ext. Price: $16.20
MOQ: 3000
Mult: 3000
SPQ: 3000
S9014
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 100mA 200mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 925
In Stock
2049+
10+ $0.0035
100+ $0.0032
300+ $0.0031
- +
x $0.0035
Ext. Price: $0.03
MOQ: 10
Mult: 1
SPQ: 3
MMBT3904
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 200mA 200mW (BJT) NPN IC()=200mA PD(max_power)=200mWapplication:、、、
Quantity: 15000
In Stock
24+
3000+ $0.0027
9000+ $0.0027
267000+ $0.0027
- +
x $0.0027
Ext. Price: $8.10
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT3904-1AM
MDD
40V Ic= 1 mA,IB= 0 NPN 100nA 40V 200mA SOT-23 SMD mount
Quantity: 1163
In Stock
24+
1+ $0.0181
200+ $0.006
1500+ $0.0038
3000+ $0.003
- +
x $0.0181
Ext. Price: $0.18
MOQ: 10
Mult: 1
SPQ: 3000
BC848A
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO30V 100mA 225mW (BJT) NPN IC()=100mA PD(max_power)=225mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0077
90000+ $0.0076
135000+ $0.0074
- +
x $0.0077
Ext. Price: $346.50
MOQ: 45000
Mult: 45000
SPQ: 3000
MMBT5551
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO180V 600mA 350mW (BJT) NPN IC()=600mA PD(max_power)=350mWapplication:、、、
Quantity: 141000
In Stock
24+
3000+ $0.0042
9000+ $0.004
174000+ $0.0039
- +
x $0.0042
Ext. Price: $12.60
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT3906
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -200mA 200mW (BJT) PNP IC()=-200mA PD(max_power)=200mWapplication:、、、
Quantity: 3
In Stock
2051+
1+ $0.0025
- +
x $0.0025
Ext. Price: $0.00
MOQ: 1
Mult: 1
SPQ: 3
S8050-J3Y
MDD
0.6V IC=500 mA,IB= 50mA NPN 300mW 5V 100nA 40V 40V 500mA SOT-23 SMD mount
Quantity: 51
In Stock
24+
1+ $0.02
200+ $0.0066
1500+ $0.0042
3000+ $0.0033
45000+ $0.0033
60000+ $0.0033
- +
x $0.02
Ext. Price: $0.20
MOQ: 10
Mult: 1
SPQ: 3000
BC847C
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 100mA 300mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0044
90000+ $0.0044
135000+ $0.0042
- +
x $0.0044
Ext. Price: $198.00
MOQ: 45000
Mult: 45000
SPQ: 3000
MMBT4403
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-60V -600mA 225mW (BJT) PNP IC()=-600mA PD(max_power)=225mWapplication:、、、
Quantity: 3000
In Stock
25+
3000+ $0.0056
9000+ $0.0054
123000+ $0.0053
- +
x $0.0056
Ext. Price: $16.80
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT2222A
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO75V 600mA 300mW (BJT) NPN IC()=600mA PD(max_power)=300mWapplication:、、、
Quantity: 3000
In Stock
25+
3000+ $0.0054
9000+ $0.0052
129000+ $0.005
- +
x $0.0054
Ext. Price: $16.20
MOQ: 3000
Mult: 3000
SPQ: 3000
S8550
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -500mA 300mW (BJT) PNP IC()=-500mA PD(max_power)=300mWapplication:、、、
Quantity: 6000
In Stock
24+
3000+ $0.0032
9000+ $0.0031
210000+ $0.003
- +
x $0.0032
Ext. Price: $9.60
MOQ: 3000
Mult: 3000
SPQ: 3000
B772-GR
MDD
encapsulation:SOT-89 parameter:PNPtype VCBO-40V -3A 500mW (BJT) HFE200-400PNP IC()=-3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0266
60000+ $0.0262
90000+ $0.0255
- +
x $0.0266
Ext. Price: $798.00
MOQ: 30000
Mult: 30000
SPQ: 1000
2SC1623
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 100mA 200mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 3000
In Stock
3000+ $0.0031
6000+ $0.0031
9000+ $0.003
- +
x $0.0031
Ext. Price: $9.30
MOQ: 3000
Mult: 3000
SPQ: 3000
B772-Y
MDD
encapsulation:SOT-89 parameter:PNPtype VCBO-40V -3A 500mW (BJT) PNP IC()=-3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0266
60000+ $0.0262
90000+ $0.0255
- +
x $0.0266
Ext. Price: $798.00
MOQ: 30000
Mult: 30000
SPQ: 1000
S8050
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO40V 500mA 300mW (BJT) NPN IC()=500mA PD(max_power)=300mWapplication:、、、
Quantity: 94927
In Stock
2517+
10+ $0.0065
100+ $0.0052
300+ $0.0046
3000+ $0.0036
9000+ $0.0035
21000+ $0.0033
60000+ $0.0031
- +
x $0.0065
Ext. Price: $0.06
MOQ: 10
Mult: 10
SPQ: 3000
D882-Y
MDD
encapsulation:SOT-89 parameter:NPNtype VCBO40V 3A 500mW (BJT) HFE160-320NPN IC()=3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0266
60000+ $0.0262
90000+ $0.0255
- +
x $0.0266
Ext. Price: $798.00
MOQ: 30000
Mult: 30000
SPQ: 1000
2SC1815
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 150mA 200mW (BJT) NPN IC()=150mA PD(max_power)=200mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0035
90000+ $0.0035
135000+ $0.0035
- +
x $0.0035
Ext. Price: $157.50
MOQ: 45000
Mult: 45000
SPQ: 3000
S9015
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-50V -100mA 200mW (BJT) PNP IC()=-100mA PD(max_power)=200mWapplication:、、、
Quantity: 30000
In Stock
3000+ $0.0043
6000+ $0.0042
9000+ $0.0042
- +
x $0.0043
Ext. Price: $12.90
MOQ: 3000
Mult: 3000
SPQ: 3000
S9012
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -500mA 300mW (BJT) PNP IC()=-500mA PD(max_power)=300mWapplication:、、、
Quantity: 2848
In Stock
2519+
10+ $0.0073
100+ $0.0058
300+ $0.005
3000+ $0.0044
9000+ $0.0039
- +
x $0.0073
Ext. Price: $0.07
MOQ: 10
Mult: 10
SPQ: 3000
SS8550
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -1500mA 300mW (BJT) PNP IC()=-1500mA PD(max_power)=300mWapplication:、、、
Quantity: 15000
In Stock
24+
3000+ $0.0043
9000+ $0.0042
159000+ $0.0041
- +
x $0.0043
Ext. Price: $12.90
MOQ: 3000
Mult: 3000
SPQ: 3000
S9013
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO40V 500mA 300mW (BJT) NPN IC()=500mA PD(max_power)=300mWapplication:、、、
Quantity: 15446
In Stock
2502+
50+ $0.0067
500+ $0.0054
3000+ $0.0047
6000+ $0.0042
21000+ $0.0039
51000+ $0.0037
- +
x $0.0067
Ext. Price: $0.33
MOQ: 50
Mult: 50
SPQ: 3000

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.