Home > Catalogue > Diodes, Transistors & Thyristors > Bipolar Transistors (BJT)> MDD

Bipolar Transistors (BJT)

Results:
Bipolar Transistors (BJT) Results:
Filter Results: -1/32
Comprehensive
Price Priority
Stock Priority
Image
Part Number
Manufacturer
Description
Availability
Unit Price
Quantity
Operation
S8550-2TY
MDD
600mV PNP 100nA 40V 500mA SOT-23 SMD mount
Quantity: 10695
In Stock
2443+
50+ $0.0062
500+ $0.005
1000+ $0.0042
3000+ $0.0037
9000+ $0.0034
- +
x $0.0062
Ext. Price: $0.31
MOQ: 50
Mult: 50
SPQ: 3000
D882-GR
MDD
encapsulation:SOT-89 parameter:NPNtype VCBO40V 3A 500mW (BJT) HFE200-400NPN IC()=3A PD(max_power)=500mWapplication:、、、
Quantity: 10000
Ship Date: 3-5 working days
1000+ $0.0254
2000+ $0.025
3000+ $0.0243
59000+ $0.0222
- +
x $0.0254
Ext. Price: $25.40
MOQ: 1000
Mult: 1000
SPQ: 1000
MMBTA42
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO300V 300mA 350mW (BJT) NPN IC()=300mA PD(max_power)=350mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0092
90000+ $0.0091
135000+ $0.0088
162000+ $0.0081
- +
x $0.0092
Ext. Price: $414.00
MOQ: 45000
Mult: 45000
SPQ: 3000
S9014
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 100mA 200mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 925
In Stock
2049+
10+ $0.0035
100+ $0.0033
300+ $0.0031
- +
x $0.0035
Ext. Price: $0.03
MOQ: 10
Mult: 1
SPQ: 3
MMBT4401
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 600mA 225mW (BJT) NPN IC()=600mA PD(max_power)=225mWapplication:、、、
Quantity: 3000
In Stock
24+
3000+ $0.0054
9000+ $0.0053
129000+ $0.0051
- +
x $0.0054
Ext. Price: $16.20
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT2907A
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-60 -600mA 350mW (BJT) PNP IC()=-600mA PD(max_power)=350mWapplication:、、、
Quantity: 30000
Ship Date: 3-5 working days
3000+ $0.0061
6000+ $0.006
9000+ $0.0058
246000+ $0.0053
- +
x $0.0061
Ext. Price: $18.30
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT3904
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 200mA 200mW (BJT) NPN IC()=200mA PD(max_power)=200mWapplication:、、、
Quantity: 9000
In Stock
24+
3000+ $0.0028
9000+ $0.0027
276000+ $0.0027
- +
x $0.0028
Ext. Price: $8.40
MOQ: 3000
Mult: 3000
SPQ: 3000
BC848A
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO30V 100mA 225mW (BJT) NPN IC()=100mA PD(max_power)=225mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0073
90000+ $0.0073
135000+ $0.0071
204000+ $0.0065
- +
x $0.0073
Ext. Price: $328.50
MOQ: 45000
Mult: 45000
SPQ: 3000
MMBT3906
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -200mA 200mW (BJT) PNP IC()=-200mA PD(max_power)=200mWapplication:、、、
Quantity: 3
In Stock
2051+
3+ $0.0054
100+ $0.0043
300+ $0.0038
3000+ $0.0033
9000+ $0.0031
21000+ $0.0029
- +
x $0.0054
Ext. Price: $0.01
MOQ: 3
Mult: 1
SPQ: 3
BC847C
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 100mA 300mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0042
90000+ $0.0042
135000+ $0.0041
351000+ $0.0037
- +
x $0.0042
Ext. Price: $189.00
MOQ: 45000
Mult: 45000
SPQ: 3000
MMBT5551
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO180V 600mA 350mW (BJT) NPN IC()=600mA PD(max_power)=350mWapplication:、、、
Quantity: 141000
In Stock
24+
3000+ $0.0042
9000+ $0.0041
180000+ $0.004
- +
x $0.0042
Ext. Price: $12.60
MOQ: 3000
Mult: 3000
SPQ: 3000
MMBT4403
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-60V -600mA 225mW (BJT) PNP IC()=-600mA PD(max_power)=225mWapplication:、、、
Quantity: 3000
In Stock
25+
3000+ $0.0063
9000+ $0.0061
126000+ $0.0059
- +
x $0.0063
Ext. Price: $18.89
MOQ: 3000
Mult: 3000
SPQ: 3000
S8550
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -500mA 300mW (BJT) PNP IC()=-500mA PD(max_power)=300mWapplication:、、、
Quantity: 6000
In Stock
24+
3000+ $0.0034
9000+ $0.0033
219000+ $0.0032
- +
x $0.0034
Ext. Price: $10.19
MOQ: 3000
Mult: 3000
SPQ: 3000
B772-GR
MDD
encapsulation:SOT-89 parameter:PNPtype VCBO-40V -3A 500mW (BJT) HFE200-400PNP IC()=-3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0254
60000+ $0.025
90000+ $0.0222
- +
x $0.0254
Ext. Price: $762.00
MOQ: 30000
Mult: 30000
SPQ: 1000
MMBT2222A
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO75V 600mA 300mW (BJT) NPN IC()=600mA PD(max_power)=300mWapplication:、、、
Quantity: 3000
In Stock
25+
3000+ $0.0058
9000+ $0.0057
132000+ $0.0055
- +
x $0.0058
Ext. Price: $17.39
MOQ: 3000
Mult: 3000
SPQ: 3000
B772-Y
MDD
encapsulation:SOT-89 parameter:PNPtype VCBO-40V -3A 500mW (BJT) PNP IC()=-3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0254
60000+ $0.025
90000+ $0.0222
- +
x $0.0254
Ext. Price: $762.00
MOQ: 30000
Mult: 30000
SPQ: 1000
2SC1623
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO60V 100mA 200mW (BJT) NPN IC()=100mA PD(max_power)=200mWapplication:、、、
Quantity: 3000
Ship Date: 3-5 working days
3000+ $0.003
6000+ $0.0029
9000+ $0.0028
504000+ $0.0026
- +
x $0.003
Ext. Price: $9.00
MOQ: 3000
Mult: 3000
SPQ: 3000
S8050
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO40V 500mA 300mW (BJT) NPN IC()=500mA PD(max_power)=300mWapplication:、、、
Quantity: 84528
In Stock
2517+
10+ $0.0065
100+ $0.0053
300+ $0.0046
3000+ $0.0036
9000+ $0.0035
21000+ $0.0033
60000+ $0.0032
- +
x $0.0065
Ext. Price: $0.06
MOQ: 10
Mult: 10
SPQ: 3000
D882-Y
MDD
encapsulation:SOT-89 parameter:NPNtype VCBO40V 3A 500mW (BJT) HFE160-320NPN IC()=3A PD(max_power)=500mWapplication:、、、
Quantity: 600000
Ship Date: 6-8 weeks
30000+ $0.0254
60000+ $0.025
90000+ $0.0222
- +
x $0.0254
Ext. Price: $762.00
MOQ: 30000
Mult: 30000
SPQ: 1000
S9012
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -500mA 300mW (BJT) PNP IC()=-500mA PD(max_power)=300mWapplication:、、、
Quantity: 2848
In Stock
2519+
10+ $0.0073
100+ $0.0058
300+ $0.0051
3000+ $0.0044
9000+ $0.0039
- +
x $0.0073
Ext. Price: $0.07
MOQ: 10
Mult: 10
SPQ: 3000
2SC1815
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO50V 150mA 200mW (BJT) NPN IC()=150mA PD(max_power)=200mWapplication:、、、
Quantity: 900000
Ship Date: 6-8 weeks
45000+ $0.0035
90000+ $0.0034
135000+ $0.0033
441000+ $0.003
- +
x $0.0035
Ext. Price: $157.50
MOQ: 45000
Mult: 45000
SPQ: 3000
S9015
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-50V -100mA 200mW (BJT) PNP IC()=-100mA PD(max_power)=200mWapplication:、、、
Quantity: 30000
Ship Date: 3-5 working days
3000+ $0.0042
6000+ $0.0041
9000+ $0.004
363000+ $0.0036
- +
x $0.0042
Ext. Price: $12.60
MOQ: 3000
Mult: 3000
SPQ: 3000
SS8550
MDD
encapsulation:SOT-23 parameter:PNPtype VCBO-40V -1500mA 300mW (BJT) PNP IC()=-1500mA PD(max_power)=300mWapplication:、、、
Quantity: 9000
In Stock
24+
3000+ $0.0045
9000+ $0.0043
162000+ $0.0042
- +
x $0.0045
Ext. Price: $13.50
MOQ: 3000
Mult: 3000
SPQ: 3000
BC817-25
MDD
encapsulation:SOT-23parameter:NPNtype VCBO50V 500mA 300mW (BJT) HFE160-400NPN IC()=500mA PD(max_power)=300mWapplication:、、、
Quantity: 30000
Ship Date: 3-5 working days
3000+ $0.0064
6000+ $0.0063
9000+ $0.0061
234000+ $0.0056
- +
x $0.0064
Ext. Price: $19.20
MOQ: 3000
Mult: 3000
SPQ: 3000
SS8050
MDD
encapsulation:SOT-23 parameter:NPNtype VCBO40V 1500mA 300mW (BJT) NPN IC()=1500mA PD(max_power)=300mWapplication:、、、
Quantity: 5751
In Stock
2501+
10+ $0.0082
100+ $0.0067
300+ $0.0059
3000+ $0.0042
6000+ $0.0041
- +
x $0.0082
Ext. Price: $0.08
MOQ: 10
Mult: 10
SPQ: 3000

Bipolar Transistors (BJT)

BJT stands for Bipolar Junction Transistor, a crucial component in electronic circuits. Here's a concise introduction in English:

Definition:
A Bipolar Junction Transistor (BJT) is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of three layers of semiconductor material: an emitter, a base, and a collector. The emitter and collector are doped differently to create a PNP (positive-negative-positive) or NPN (negative-positive-negative) configuration.

Function:
BJTs function by allowing a small current to control a larger current flow. They operate in one of three modes: active, saturation, or cutoff. In the active mode, the base-emitter junction is forward-biased, and the base-collector junction is reverse-biased, allowing current to flow from emitter to collector. In saturation, both junctions are forward-biased, and the transistor acts as a closed switch. In cutoff, both junctions are reverse-biased, and no current flows.

Applications:
BJTs are used in a wide range of applications, including:
1. Amplifiers: They amplify weak signals in audio systems, radio receivers, and other electronic devices.
2. Switches: They can be used as digital switches in computers and other digital systems.
3. Voltage regulators: They help maintain a stable voltage in power supplies.
4. Motor controls: They are used in the control circuits of electric motors.

Selection Criteria:
When selecting a BJT, consider the following:
1. Current Gain (hFE): The higher the gain, the more current can be controlled with a given input current.
2. Power Rating: Ensure the BJT can handle the power levels required for the application.
3. Operating Voltage: Choose a BJT with a suitable voltage range for the circuit.
4. Frequency Response: For high-frequency applications, select a BJT with a high cutoff frequency.
5. Physical Size and Packaging: Consider the physical dimensions and the type of package that fits the design.
6. Temperature Range: Ensure the BJT can operate within the temperature range of the application.
7. Cost: Factor in the cost-effectiveness of the BJT for the intended use.

BJTs are fundamental to the operation of many electronic devices, and their selection is critical for the performance and reliability of the system.
Please refer to the product rule book for details.